AOT460 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT460/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. AOT460and AOT460L are electrically identical. Features VDS (V) = 60V ID = 85 A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Avalanche Current C C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C ±20 V ID 66 IDM 340 TC=100°C A IAR 80 A EAR 320 mJ 268 PD Junction and Storage Temperature Range 1/6 Units V 85 TC=100°C Pulsed Drain Current Maximum 60 W 134 -55 to 175 TJ, TSTG Thermal Characteristics Parameter A Maximum Junction-to-Ambient Steady-State Symbol RθJA Maximum Junction-to-Case B Steady-State RθJC °C Typ Max Units 45 0.45 60 0.56 °C/W °C/W www.freescale.net.cn AOT460 N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250uA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V Static Drain-Source On-Resistance gFSForward Transconductance VSD Diode Forward Voltage IS Output Capacitance Reverse Transfer Capacitance Rg Gate resistance TJ=125°C Qgs Gate Source Charge 100 nA 4 V 6.3 7.5 10.5 13 A VDS=5V, ID=30A 90 IS=1A, VGS=0V 0.7 G 3800 VGS=0V, VDS=30V, f=1MHz VGS=10V, VDS=30V, ID=30A mΩ 1 S V 85 A 4560 pF 430 pF 190 VGS=0V, VDS=0V, f=1MHz µA 2.95 340 VGS=10V, ID=30A SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 50 2 Units V 10 DYNAMIC PARAMETERS Input Capacitance Ciss Crss Max 60 TJ=55°C Maximum Body-Diode Continuous Current Coss Typ VDS=60V, VGS=0V IDSS RDS(ON) Min pF 1.5 2.3 Ω 68 88 nC 33 nC 15 nC Qgd Gate Drain Charge 19 nC tD(on) Turn-On DelayTime 18 ns tr Turn-On Rise Time 35 ns tD(off) Turn-Off DelayTime 44 ns tf trr Turn-Off Fall Time 23 ns IF=30A, dI/dt=100A/µs 53 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 98 Body Diode Reverse Recovery Time VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω 64 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev1: Jan. 2009 2/6 www.freescale.net.cn AOT460 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 250 VDS=5V 10V 8V 200 80 60 5V ID(A) ID (A) 150 100 40 125°C 25°C 4.5V 50 20 VGS=4V - 0 0 0 1 2 3 4 5 2 VDS (Volts) Figure 1: On-Region Characteristics 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics 2.2 Normalized On-Resistance 7.2 7 RDS(ON) (mΩ Ω) 2.5 6.8 VGS=10V 6.6 6.4 6.2 6 2 1.8 1.6 VGS=10V, 30A 1.4 1.2 1 0.8 0.6 0 20 40 60 80 100 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 25 100 ID=30A 10 1 15 IS (A) RDS(ON) (mΩ Ω) 20 125° 10 125°C 0.1 25°C 0.01 -40°C 0.001 25° 5 -40°C 0 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOT460 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 10 VDS=30V ID=30A Ciss Capacitance (nF) VGS (Volts) 8 6 4 4 2 Crss 2 0 Coss 0 0 20 40 60 Qg (nC) Figure 7: Gate-Charge Characteristics 80 0 15 30 45 VDS (Volts) Figure 8: Capacitance Characteristics 60 10000 1000 100 500µs RDS(ON) limited 1ms 10 Power (W) ID (A) 10µs 1000 5ms DC TJ(Max)=175°C =175 C TC=25°C 1 100 1 10 100 0.0001 VDS (V) Figure 9: Maximun Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOT460 N-Channel Enhancement Mode Field Effect Transistor 300 100 250 80 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 150 100 60 40 20 50 0 0 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 175 0 25 50 75 100 125 150 TCASE (°C) Figure 12: Current De-rating (Note B) 175 ID(A), Peak Avalanche Current 150 TA=25°C 125 100 75 TA=150°C 50 25 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 10: Single Pulse Avalanche capability 5/6 www.freescale.net.cn AOT460 N-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn