SHENZHENFREESCALE AOD4132

AOD4132
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion.
Features
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 4mΩ (VGS = 10V)
RDS(ON) < 6mΩ (VGS = 4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
B,G
Current
G
TC=100°C
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation B
C
A
Junction and Storage Temperature Range
Maximum Junction-to-Case C
1/6
V
ID
63
200
IAR
30
A
EAR
112
mJ
W
50
2.5
W
1.6
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
A
100
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
±20
IDM
PD
TC=100°C
TA=25°C
Power Dissipation
Units
V
85
B
Pulsed Drain Current
Avalanche Current
Maximum
30
RθJA
RθJC
Typ
14.2
39
0.8
°C
Max
20
50
1.5
Units
°C/W
°C/W
°C/W
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AOD4132
N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
85
TJ=55°C
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
5
100
nA
3
V
2.8
4
4.4
5.5
4.4
6
mΩ
1
V
85
A
4400
pF
A
Forward Transconductance
VDS=5V, ID=20A
106
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.72
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
3700
VGS=0V, VDS=15V, f=1MHz
µA
1.8
gFS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
700
pF
390
pF
0.54
0.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
63
76
nC
Qg(4.5V) Total Gate Charge
33
40
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=20A
8.6
nC
17.6
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=20A, dI/dt=100A/µs
34
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
30
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
12
ns
15.5
ns
40
ns
14
ns
41
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be u sed if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev 1: Sep 2008
2/6
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AOD4132
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
50
50
VDS=5V
4.0V
40
ID(A)
ID (A)
40
30
3.5V
125°C
30
25°C
20
20
10
10
VGS=3V
0
0
0
1
2
3
4
1.5
5
2
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
8
Normalized On-Resistance
1.6
7
RDS(ON) (mΩ )
2.5
VGS=4.5V
6
5
4
VGS=10V
3
2
ID=20A
1.4
VGS=10V
VGS=4.5V
1.2
1
0.8
0
10
20
30
40
50
60
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
8
1.0E+02
1.0E+01
125°C
125°C
4
1.0E+00
IS (A)
RDS(ON) (mΩ )
6
ID=20A
25°C
1.0E-01
25°C
1.0E-02
1.0E-03
2
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD4132
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
VDS=15V
ID=20A
Ciss
4000
Capacitance (pF)
VGS (Volts)
8
6
4
3000
2000
Coss
2
1000
0
0
Crss
0
10
20
30
40
50
60
70
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
RDS(ON)
limited
10µs
1ms
80
10ms
0.1s
10
1s
1
0
0.01
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
VDS (Volts)
10
40
20
DC
0.1
0.1
60
10s
TJ(Max)=150°C
TA=25°C
1
TJ(Max)=150°C
TA=25°C
100µs
Power (W)
ID (Amps)
30
100
100
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOD4132
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
TA=25°C
100
80
tA =
Power Dissipation (W)
ID(A), Peak Avalanche Current
120
L ⋅ ID
BV − VDD
60
40
20
TA=150°C
0
0.000001
100
80
60
40
20
0
0.00001
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
Current rating ID(A)
80
60
40
20
0
0
5/6
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
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AOD4132
N-Channel Enhancement Mode Field
Effect Transistor
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
6/6
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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