AOD4132 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 6mΩ (VGS = 4.5V) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain B,G Current G TC=100°C C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C A Junction and Storage Temperature Range Maximum Junction-to-Case C 1/6 V ID 63 200 IAR 30 A EAR 112 mJ W 50 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State A 100 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A ±20 IDM PD TC=100°C TA=25°C Power Dissipation Units V 85 B Pulsed Drain Current Avalanche Current Maximum 30 RθJA RθJC Typ 14.2 39 0.8 °C Max 20 50 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AOD4132 N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 85 TJ=55°C VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A 5 100 nA 3 V 2.8 4 4.4 5.5 4.4 6 mΩ 1 V 85 A 4400 pF A Forward Transconductance VDS=5V, ID=20A 106 VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 3700 VGS=0V, VDS=15V, f=1MHz µA 1.8 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ mΩ S 700 pF 390 pF 0.54 0.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 63 76 nC Qg(4.5V) Total Gate Charge 33 40 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A 8.6 nC 17.6 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=100A/µs 34 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 30 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 12 ns 15.5 ns 40 ns 14 ns 41 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175°C may be u sed if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev 1: Sep 2008 2/6 www.freescale.net.cn AOD4132 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 50 50 VDS=5V 4.0V 40 ID(A) ID (A) 40 30 3.5V 125°C 30 25°C 20 20 10 10 VGS=3V 0 0 0 1 2 3 4 1.5 5 2 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 8 Normalized On-Resistance 1.6 7 RDS(ON) (mΩ ) 2.5 VGS=4.5V 6 5 4 VGS=10V 3 2 ID=20A 1.4 VGS=10V VGS=4.5V 1.2 1 0.8 0 10 20 30 40 50 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 8 1.0E+02 1.0E+01 125°C 125°C 4 1.0E+00 IS (A) RDS(ON) (mΩ ) 6 ID=20A 25°C 1.0E-01 25°C 1.0E-02 1.0E-03 2 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOD4132 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 10 VDS=15V ID=20A Ciss 4000 Capacitance (pF) VGS (Volts) 8 6 4 3000 2000 Coss 2 1000 0 0 Crss 0 10 20 30 40 50 60 70 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000 RDS(ON) limited 10µs 1ms 80 10ms 0.1s 10 1s 1 0 0.01 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VDS (Volts) 10 40 20 DC 0.1 0.1 60 10s TJ(Max)=150°C TA=25°C 1 TJ(Max)=150°C TA=25°C 100µs Power (W) ID (Amps) 30 100 100 Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD4132 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 100 80 tA = Power Dissipation (W) ID(A), Peak Avalanche Current 120 L ⋅ ID BV − VDD 60 40 20 TA=150°C 0 0.000001 100 80 60 40 20 0 0.00001 0.0001 0.001 0.01 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 100 Current rating ID(A) 80 60 40 20 0 0 5/6 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) 175 www.freescale.net.cn AOD4132 N-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn