AOD4186 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for low voltage inverter applications. Features VDS (V) =40V ID = 35A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 19mΩ (VGS = 4.5V) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current C A 10 A 8 Avalanche Current C IAR 24 A Repetitive avalanche energy L=0.1mH C EAR 29 mJ TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 50 PD TA=25°C Power Dissipation A 1/6 V 70 IDSM TA=70°C ±20 27 IDM TA=25°C Continuous Drain Current Units V 35 ID TC=100°C Maximum 40 RθJA RθJC Typ 16.7 40 2.5 °C Max 25 50 3 Units °C/W °C/W °C/W www.freescale.net.cn AOD4186 N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V VDS=40V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 On state drain current VGS=10V, VDS=5V 100 RDS(ON) Static Drain-Source On-Resistance TJ=55°C 5 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=15A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs VGS=10V, VDS=20V, ID=20A Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Units V 1 Zero Gate Voltage Drain Current Coss Max 40 IDSS IS Typ 2.2 µA 100 nA 2.7 V A 12.4 15 20 24 14.5 19 60 mΩ mΩ S 0.75 1 V 60 A 780 980 1200 pF 90 130 170 pF 48 80 110 pF 1.9 3.8 5.7 Ω 13.5 17 20 nC 7 9 11 nC 2 2.5 3 nC 2.7 4.5 6.3 nC VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3Ω 6 ns 12 ns 26 ns 7 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 9 12 15 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 24 31 38 ns nC 2 A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AOD4186 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 6V 10V VDS=5V 4.5V 60 60 ID(A) ID (A) 4V 40 40 125°C 20 20 25°C VGS=3.5V 0 0 0 1 2 3 4 0 5 1 20 3 4 5 6 Normalized On-Resistance 2 18 RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 16 14 VGS=10V 12 10 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=15A 1 0.8 8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 40 1.0E+02 ID=20A 1.0E+01 35 25 IS (A) RDS(ON) (mΩ) 40 1.0E+00 30 125°C 20 1.0E-02 25°C 1.0E-03 25°C 15 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 125°C 1.0E-01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOD4186 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=20V ID=20A 1200 Capacitance (pF) VGS (Volts) 8 6 4 900 600 Coss 2 300 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics Ciss 20 Crss 0 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 40 200 100.0 10.0 10µs 160 100µs DC 1ms 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 0.01 0.1 120 17 TJ(Max)=175°C TC=25°C 5 80 2 10 40 1 VDS (Volts) 10 100 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance Power (W) ID (Amps) 10µs RDS(ON) limited In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3°C/W 1 PD 0.1 Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD4186 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 Power Dissipation (W) IAR(A) Peak Avalanche Current 60 TA=25°C TA=100°C TA=150°C 50 40 30 20 10 TA=125°C 0 10 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 150 175 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 30 17 5 2 10 100 20 10 10 1 0.00001 0 0 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 10 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.001 40 RθJA=50°C/W 0.1 Single Pulse PD 0.01 Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOD4186 N-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn