AOTF404 N-Channel Enhancement Mode Field Effect Transistor General Description The AOTF404/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Features VDS (V) = 105V ID = 26 A (VGS =10V) RDS(ON) < 28 mΩ (VGS =10V) RDS(ON) < 31 mΩ (VGS = 6V) TO-220FL D G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current ±25 V TA=25°C 90 5.8 IDSM TA=70°C A 18 ID IDM Pulsed Drain Current C A 4.5 C IAR 37 A Repetitive avalanche energy L=0.1mH C EAR 68 mJ Avalanche Current TC=25°C Power Dissipation B A 43 PD TC=100°C TA=25°C Power Dissipation W 21 2.2 PDSM TA=70°C Junction and Storage Temperature Range 1/6 Units V 26 TC=100°C Continuous Drain Current Maximum 105 W 1.38 TJ, TSTG -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RθJA Maximum Junction-to-Case B Steady-State RθJC Symbol °C Typ 10 Max 12 Units °C/W 48.5 2.9 58 3.5 °C/W °C/W www.freescale.net.cn AOTF404 N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=10mA, VGS=0V 105 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 90 5 VGS=10V, ID=20A TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=20A Units V TJ=55°C Static Drain-Source On-Resistance Max 1 VDS=105V, VGS=0V IDSS RDS(ON) Typ µA 100 nA 3.2 4 V 21 28 39 47 23.5 31 mΩ 1 V 55 A A 73 mΩ S 0.72 1630 2038 2445 pF 142 204 265 pF 51 85 119 pF 0.65 1.3 1.95 Ω 30.8 38.5 46 nC 6.4 8 9.6 nC 10 14 nC Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 34 49 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 337 481 8 12.7 VGS=10V, VDS=50V, RL=2.7Ω, RGEN=3Ω ns 8.2 ns 31.5 ns 11.2 ns 64 625 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0: Otc. 2008 2/6 www.freescale.net.cn AOTF404 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 25 10V 80 VDS=5V 20 6V 15 ID (A) ID(A) 60 125°C 10 40 5V 5 20 25°C VGS=4.5V 0 0 0 1 2 3 4 2 5 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 30 Normalized On-Resistance 2.6 VGS=6V 25 RDS(ON) (mΩ) 2.5 20 VGS=10V 15 2.4 VGS=10V, 20A 2.2 2 1.8 1.6 VGS=6V,20A 1.4 1.2 1 0.8 10 0 10 20 30 0 40 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+02 60 ID=20A 1.0E+01 50 125°C 1.0E+00 40 IS (A) RDS(ON) (mΩ) 125°C 30 1.0E-01 25°C 1.0E-02 1.0E-03 20 25°C 1.0E-04 10 0.0 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOTF404 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 10 VDS=50V ID=20A Ciss Capacitance (nF) VGS (Volts) 8 6 4 2 1 Coss 2 0 Crss 0 0 10 20 30 40 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100 300 10µs RDS(ON) limited TJ(Max)=175°C TC=25°C ID (Amps) 1ms 10ms Power (W) 100µs 10 DC 1 100 200 100 TJ(Max)=175°C, TA=25°C 0 0.0001 0.1 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=3.5°C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD 0.001 Ton T Single Pulse 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOTF404 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 Power Dissipation (W) ID(A), Peak Avalanche Current 45 35 TA=25°C TA=150°C TA=100°C 25 TA=125°C 15 0.000001 40 30 20 10 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 30 100 25 80 Power (W) Current rating ID(A) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 20 15 10 TA=25°C 60 40 20 5 0 0.01 0 0 25 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 10 1 50 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=58°C/W 175 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD 0.001 0.0001 0.0001 Single Pulse 0.001 0.01 Ton 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOTF404 N-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id Vgs Vgs + Vdd I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 Isd L + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn