AOD4189 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD4189 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -40V ID = -40A (V GS = -10V) RDS(ON) < 22mΩ (VGS = -10V) RDS(ON) < 29mΩ (VGS = -4.5V) D G S Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current B,H C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C A Junction and Storage Temperature Range Maximum Junction-to-Case D,F 1/6 V -28 IDM -50 IAR -35 EAR 61 mJ 31 W 2.5 1.6 -55 to 175 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State A 62.5 PDSM TA=70°C Thermal Characteristics Parameter A,G Maximum Junction-to-Ambient A,G Maximum Junction-to-Ambient ±20 ID PD TC=100°C TA=25°C Power Dissipation Units V -40 TC=100°C Pulsed Drain Current Maximum -40 RθJA RθJC Typ 15 41 2 °C Max 20 50 2.4 Units °C/W °C/W °C/W www.freescale.net.cn AOD4189 P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -40 -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -50 ±100 VGS=-10V, ID=-12A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-8A gFS Forward Transconductance VDS=-5V, ID=-12A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=-10V, VDS=-20V, ID=-12A VGS=-10V, VDS=-20V, RL=1.6Ω, RGEN=3Ω -3 18 22 2.5 27 33 23 29 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs µA nA V mΩ S -1 V -20 A 1870 pF 185 pF 155 pF 4.5 6.5 Ω 31.4 41 nC 7.9 10 7.6 nC 6.2 nC 10 ns 18 ns 38 ns 24 IF=-12A, dI/dt=100A/µs Units A 35 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz -1.9 -0.74 DYNAMIC PARAMETERS Input Capacitance Ciss Coss Max V VDS=-40V, VGS=0V VGS(th) RDS(ON) Typ 32 ns 42 30 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM are based on T J(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using t ≤300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device TBD mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. TBD G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev1: Oct 2008 2/6 www.freescale.net.cn AOD4189 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 -10V VDS=-5V -4.5V -4.0V 40 40 -ID(A) -ID (A) -6.0V 30 VGS=-3.5V 30 20 20 10 10 0 0 125°C 25°C 0 1 2 3 4 1.5 5 2 Normalized On-Resistance 28 VGS=-4.5V 26 RDS(ON) (mΩ ) 3.5 4 4.5 2 30 24 22 20 VGS=-10V 18 16 VGS=-10V ID=-12A 1.8 1.6 VGS=-4.5V ID=-8A 1.4 1.2 1 0.8 0 10 20 30 40 -50 -25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 55 150 ID=-12A 50 10 45 mJ 1 40 35 -IS (A) RDS(ON) (mΩ ) 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 125°C 0.1 125°C 0.01 25°C 30 0.001 25 25°C 0.0001 20 0.00001 15 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 2.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOD4189 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2800 10 VDS=-20V ID=-12A 2400 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2000 1600 1200 800 Crss 2 Coss 400 0 0 0 5 10 15 20 25 30 0 35 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 35 40 -VDS (Volts) Figure 8: Capacitance Characteristics 10000 100 TJ(Max)=175°C TC=25°C 10µs 100µs 10 Power (W) -ID (Amps) 30 RDS(ON) limited 1000 100 1ms TJ(Max)=175°C TC=25°C 10ms DC 1 1 10 -VDS (Volts) 100 Zθ Jc Normalized Transient Thermal Resistance D=Ton/T TJ,PK=Tc+PDM.ZθJC.RθJC RθJC=2.4°C/W 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 10 0.00001 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse mJ 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD4189 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 60 Power Dissipation (W) -IA, Peak Avalanche Current (A) 100 10 50 40 30 20 10 1 0.01 0.1 1 10 100 0 1000 0 25 50 Time in Avalache, t A (s) Figure 12: Single Pulse Avalanche Capability 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 10000 50 40 1000 30 Power (W) Current rating -ID (A) TJ(Max)=150°C TA=25°C 20 100 10 10 0 0 25 50 75 100 125 150 1 1E-04 0.001 175 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note G) TCASE (°C) Figure 14: Current De-rating (Note B) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) 5/6 www.freescale.net.cn AOD4189 P-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd + DUT Qgs Vds Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs td(off) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 6/6 Vgs L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn