SHENZHENFREESCALE AOD4189

AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD4189 uses advanced trench technology and design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high
current load applications.
Features
VDS (V) = -40V
ID = -40A
(V GS = -10V)
RDS(ON) < 22mΩ (VGS = -10V)
RDS(ON) < 29mΩ (VGS = -4.5V)
D
G
S
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current B,H
C
Avalanche Current C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation B
C
A
Junction and Storage Temperature Range
Maximum Junction-to-Case D,F
1/6
V
-28
IDM
-50
IAR
-35
EAR
61
mJ
31
W
2.5
1.6
-55 to 175
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
A
62.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
A,G
Maximum Junction-to-Ambient
A,G
Maximum Junction-to-Ambient
±20
ID
PD
TC=100°C
TA=25°C
Power Dissipation
Units
V
-40
TC=100°C
Pulsed Drain Current
Maximum
-40
RθJA
RθJC
Typ
15
41
2
°C
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
www.freescale.net.cn
AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-40
-1
TJ=55°C
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-50
±100
VGS=-10V, ID=-12A
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-8A
gFS
Forward Transconductance
VDS=-5V, ID=-12A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=-10V, VDS=-20V,
ID=-12A
VGS=-10V, VDS=-20V, RL=1.6Ω,
RGEN=3Ω
-3
18
22
2.5
27
33
23
29
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
µA
nA
V
mΩ
S
-1
V
-20
A
1870
pF
185
pF
155
pF
4.5
6.5
Ω
31.4
41
nC
7.9
10
7.6
nC
6.2
nC
10
ns
18
ns
38
ns
24
IF=-12A, dI/dt=100A/µs
Units
A
35
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
-1.9
-0.74
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Max
V
VDS=-40V, VGS=0V
VGS(th)
RDS(ON)
Typ
32
ns
42
30
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM are
based on T J(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using t ≤300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device TBD
mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
TBD
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev1: Oct 2008
2/6
www.freescale.net.cn
AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
-10V
VDS=-5V
-4.5V
-4.0V
40
40
-ID(A)
-ID (A)
-6.0V
30
VGS=-3.5V
30
20
20
10
10
0
0
125°C
25°C
0
1
2
3
4
1.5
5
2
Normalized On-Resistance
28
VGS=-4.5V
26
RDS(ON) (mΩ )
3.5
4
4.5
2
30
24
22
20
VGS=-10V
18
16
VGS=-10V
ID=-12A
1.8
1.6
VGS=-4.5V
ID=-8A
1.4
1.2
1
0.8
0
10
20
30
40
-50 -25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
100
55
150
ID=-12A
50
10
45
mJ
1
40
35
-IS (A)
RDS(ON) (mΩ )
3
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
125°C
0.1
125°C
0.01
25°C
30
0.001
25
25°C
0.0001
20
0.00001
15
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/6
2.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
www.freescale.net.cn
AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
10
VDS=-20V
ID=-12A
2400
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2000
1600
1200
800
Crss
2
Coss
400
0
0
0
5
10
15
20
25
30
0
35
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
35
40
-VDS (Volts)
Figure 8: Capacitance Characteristics
10000
100
TJ(Max)=175°C
TC=25°C
10µs
100µs
10
Power (W)
-ID (Amps)
30
RDS(ON)
limited
1000
100
1ms
TJ(Max)=175°C
TC=25°C
10ms
DC
1
1
10
-VDS (Volts)
100
Zθ Jc Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=2.4°C/W
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
10
0.00001
150
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
mJ
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
T
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
www.freescale.net.cn
AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
Power Dissipation (W)
-IA, Peak Avalanche Current (A)
100
10
50
40
30
20
10
1
0.01
0.1
1
10
100
0
1000
0
25
50
Time in Avalache, t A (s)
Figure 12: Single Pulse Avalanche Capability
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
10000
50
40
1000
30
Power (W)
Current rating -ID (A)
TJ(Max)=150°C
TA=25°C
20
100
10
10
0
0
25
50
75
100
125
150
1
1E-04 0.001
175
0.1
1
10
100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note G)
TCASE (°C)
Figure 14: Current De-rating (Note B)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.01
150
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
5/6
www.freescale.net.cn
AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
+
DUT
Qgs
Vds
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
td(on)
Vgs
-
DUT
Vgs
td(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
6/6
Vgs
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
www.freescale.net.cn