SHENZHENFREESCALE AOL1426

AOL1426
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOL1426 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and general purpose applications.
Features
VDS (V) = 30V
ID = 46A (VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 10V)
RDS(ON) < 13.5mΩ (VGS = 4.5V)
TM
Ultra SO-8
Top View
D
D
Bottom tab
connected to
drain
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
B
Current
Units
V
±12
V
46
TC=100°C
Pulsed Drain Current
ID
33
IDM
120
TA=25°C
Continuous Drain
Current H
Maximum
30
A
10
IDSM
TA=70°C
A
8
C
IAR
30
A
Repetitive avalanche energy L=0.3mH C
TC=25°C
EAR
135
mJ
Avalanche Current
Power Dissipation
B
Power Dissipation
A
TC=100°C
TA=25°C
Junction and Storage Temperature Range
Maximum Junction-to-Case
1/6
C
2
W
1.2
-55 to 175
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
21
PDSM
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
43
PD
RθJA
RθJC
Typ
24
53
2.4
°C
Max
30
64
3.5
Units
°C/W
°C/W
°C/W
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AOL1426
N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
TJ=55°C
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
5
VGS=0V, VDS=0V, f=1MHz
uA
0.1
µA
1.55
2.5
V
8.5
10.5
14.5
18
10.2
13.5
mΩ
1.0
V
46
A
1452
pF
A
40
mΩ
S
0.73
1210
VGS=0V, VDS=15V, f=1MHz
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
330
pF
85
pF
1.2
1.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
22
28
nC
Qg(4.5V) Total Gate Charge
10
13
nC
VGS=10V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
36
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
47
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
3.7
nC
2.7
nC
10
ns
6.3
ns
21
ns
2.8
ns
45
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev5: Dec 2008
2/6
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AOL1426
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
30
6V
90
20
60
ID(A)
4.5V
ID (A)
VDS=5V
25
10V
VGS=3.5V
125°
15
25°C
10
30
5
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics
13
Normalized On-Resistance
2
11
RDS(ON) (mΩ )
2
VGS=4.5V
9
VGS=10V
7
5
VGS=10V
1.8
ID=20A
1.6
VGS=4.5
1.4
1.2
1
0.8
0.6
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
20
1.0E+02
1.0E+01
125°C
1.0E+00
15
25°C
IS (A)
RDS(ON) (mΩ )
ID=20A
125°C
10
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/6
1.0E-01
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOL1426
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
10
Capacitance (pF)
VGS (Volts)
8
VDS=15V
ID=20A
6
4
2
1500
Ciss
1000
500
Coss
Crss
0
0
0
5
10
15
20
25
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000.0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
140
10µs
100µ
RDS(ON)
limited
10.0
1m
1.0
DC
10ms
0.1
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
VDS (Volts)
120
Power (W)
100.0
ID (Amps)
5
TJ(Max)=175°C
TC=25°C
100
80
60
40
10
100
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
20
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJc.RθJc
RθJC=3.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOL1426
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
Power Dissipation (W)
ID(A), Peak Avalanche Current
60
40
20
40
30
20
10
0
0
0.00001
0.0001
0.001
0
0.01
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
60
140
100
40
Power (W)
Current rating ID(A)
120
20
80
60
40
20
0
0
25
50
75
100
125
150
0
0.001
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=64°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
5/6
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AOL1426
N-Channel Enhancement Mode Field
Effect Transistor
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
6/6
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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