AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1426 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Features VDS (V) = 30V ID = 46A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 13.5mΩ (VGS = 4.5V) TM Ultra SO-8 Top View D D Bottom tab connected to drain S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain B Current Units V ±12 V 46 TC=100°C Pulsed Drain Current ID 33 IDM 120 TA=25°C Continuous Drain Current H Maximum 30 A 10 IDSM TA=70°C A 8 C IAR 30 A Repetitive avalanche energy L=0.3mH C TC=25°C EAR 135 mJ Avalanche Current Power Dissipation B Power Dissipation A TC=100°C TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Case 1/6 C 2 W 1.2 -55 to 175 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 21 PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A 43 PD RθJA RθJC Typ 24 53 2.4 °C Max 30 64 3.5 Units °C/W °C/W °C/W www.freescale.net.cn AOL1426 N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 120 TJ=55°C VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 5 VGS=0V, VDS=0V, f=1MHz uA 0.1 µA 1.55 2.5 V 8.5 10.5 14.5 18 10.2 13.5 mΩ 1.0 V 46 A 1452 pF A 40 mΩ S 0.73 1210 VGS=0V, VDS=15V, f=1MHz Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ 330 pF 85 pF 1.2 1.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 28 nC Qg(4.5V) Total Gate Charge 10 13 nC VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 36 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 47 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 3.7 nC 2.7 nC 10 ns 6.3 ns 21 ns 2.8 ns 45 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Rev5: Dec 2008 2/6 www.freescale.net.cn AOL1426 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 6V 90 20 60 ID(A) 4.5V ID (A) VDS=5V 25 10V VGS=3.5V 125° 15 25°C 10 30 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 13 Normalized On-Resistance 2 11 RDS(ON) (mΩ ) 2 VGS=4.5V 9 VGS=10V 7 5 VGS=10V 1.8 ID=20A 1.6 VGS=4.5 1.4 1.2 1 0.8 0.6 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 20 1.0E+02 1.0E+01 125°C 1.0E+00 15 25°C IS (A) RDS(ON) (mΩ ) ID=20A 125°C 10 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 1.0E-01 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOL1426 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 10 Capacitance (pF) VGS (Volts) 8 VDS=15V ID=20A 6 4 2 1500 Ciss 1000 500 Coss Crss 0 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 140 10µs 100µ RDS(ON) limited 10.0 1m 1.0 DC 10ms 0.1 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 1 VDS (Volts) 120 Power (W) 100.0 ID (Amps) 5 TJ(Max)=175°C TC=25°C 100 80 60 40 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 20 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJc.RθJc RθJC=3.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOL1426 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C Power Dissipation (W) ID(A), Peak Avalanche Current 60 40 20 40 30 20 10 0 0 0.00001 0.0001 0.001 0 0.01 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 60 140 100 40 Power (W) Current rating ID(A) 120 20 80 60 40 20 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=64°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) 5/6 www.freescale.net.cn AOL1426 N-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.freescale.net.cn