AOD492 N-Channel Enhancement Mode Field Effect Transistor General Description SRFET TM AOD492 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Features VDS (V) = 30V ID =85A (VGS = 10V) RDS(ON) < 4.4mΩ (VGS = 10V) RDS(ON) < 6.2mΩ (VGS = 4.5V) D TM SRFET Soft Recovery MOSFET: G Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain B Current H C Pulsed Drain Current C Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B Power Dissipation A C TA=25°C Junction and Storage Temperature Range 1/7 D V A 66 IDM 200 IAR 30 A EAR 135 mJ 100 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 50 PDSM TA=70°C Maximum Junction-to-Case ±20 ID PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 85 TC=100°C Avalanche Current Maximum 30 RθJA RθJC Typ 14 39 0.8 °C Max 20 50 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AOD492 N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.2 VGS=10V, VDS=5V 200 TJ=125°C VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 20 0.1 µA 2.2 V 3.6 4.4 6.1 7.7 5 6.2 mΩ 0.5 V 85 A 4512 pF A 90 H 3760 VGS=0V, VDS=15V, f=1MHz mA 1.5 0.36 DYNAMIC PARAMETERS Ciss Input Capacitance Units V 0.1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ mΩ S 682 pF 314 pF 0.75 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 62 74 nC Qg(4.5V) Total Gate Charge 29 35 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 12 nC 12 nC 9.5 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 8.5 ns 34 ns 9 ns IF=20A, dI/dt=300A/µs 18 Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 22 27 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM is based on TJ(MAX)=150° C, using t≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev2: Sep. 2008 2/7 www.freescale.net.cn AOD492 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 30 10V 8V 180 160 4.5V VDS=5V 25 6V 140 4.0V 20 ID(A) ID (A) 120 100 3.5V 80 125° 15 25°C 10 60 40 VGS=3.0V 5 20 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics Normalized On-Resistance RDS(ON) (mΩ ) 3 3.5 4 2 7 6 VGS=4.5V 5 4 3 VGS=10V 2 ID=20A VGS=10V 1.8 nC 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 210 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 10 1.0E+02 ID=20A 9 1.0E+01 8 125°C 1.0E+00 25°C 125°C 7 IS (A) RDS(ON) (mΩ ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 8 6 1.0E-01 1.0E-02 5 1.0E-03 4 25°C 3 1.0E-04 2 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/7 2 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOD492 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6.00E-09 10 5.00E-09 VDS=15V ID=20A 6 Capacitance (nF) VGS (Volts) 8 4 2 3.00E-09 2.00E-09 Coss Crss 1.00E-09 0 0.00E+00 0 10 20 30 40 50 60 70 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 10µs 100µ 1ms RDS(ON) limited 10.0 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 180 Power (W) 100.0 ID (Amps) Ciss 4.00E-09 TJ(Max)=175°C TC=25°C 160 nC 140 120 100 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 80 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJc.RθJc RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/7 www.freescale.net.cn AOD492 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS TC=25°C 100 80 Power Dissipation (W) ID(A), Peak Avalanche Current 120 TC=150°C 60 40 20 0 1.0E-07 1.0E-06 1.0E-05 1.0E-04 110 100 90 80 70 60 50 40 30 20 10 0 0 1.0E-03 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 90 160 80 140 TJ(Max)=150°C TA=25°C 70 120 60 Power (W) Current rating ID(A) 25 50 40 30 80 60 20 40 10 20 0 0 25 50 75 100 125 150 nC 100 0 0.01 175 TCASE (°C) Figure 14: Current De-rating (Note B) 0.1 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) 5/7 www.freescale.net.cn AOD492 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 0.8 VSD(V) 1.0E-02 IR (A) VDS=24V 1.0E-03 VDS=12V 0.7 20A 0.6 10A 0.5 5A 0.4 0.3 1.0E-04 IS=1A 0.2 0.1 0 1.0E-05 0 0 50 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 48 50 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 12 18 2.40 di/dt=1000A/us 11 di/dt=1000A/us 125ºC 12 25ºC 24 Qrr 9 125ºC 16 Irm (A) 32 trr (ns) 10 Qrr (nC) 2.10 15 Irm 25ºC 8 9 nC 1.50 8 1.20 7 6 1.80 25ºC trr 25ºC S 0.90 6 0.60 5 3 0.30 125ºC 4 0 0 5 10 15 20 25 30 Is (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 40 15 Is=20A 5 10 15 20 25 30 Is (A) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 18 2.50 125ºC Is=20A 125ºC 16 12 2.00 14 25ºC 125ºC 16 6 25ºC Qrr 8 trr (ns) 25ºC 9 Irm (A) 24 1.50 12 S 32 Qrr (nC) 0.00 0 0 S 40 125ºC 10 25ºC 8 125ºC trr S 3 1.00 0.50 6 Irm 0 0 600 800 1000 1200 di/dt (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. di/dt 0 6/7 200 400 4 0 200 400 600 800 1000 0.00 1200 di/dt (A) Figure 22: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.freescale.net.cn AOD492 N-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id Vgs Vgs + Vdd I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 7/7 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn