AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -30V ID = -25A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain B,G Current G Avalanche Current C C Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C 1/6 V -20 IDM -60 IAR -14 A EAR 30 mJ W 25 2.5 W 1.6 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State A 50 PDSM Junction and Storage Temperature Range Maximum Junction-to-Case D ±20 ID PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V -25 TA=100°C Pulsed Drain Current Maximum -30 RθJA RθJC Typ 16.7 40 2.5 Max 25 50 3 Units °C/W °C/W °C/W www.freescale.net.cn AOD417 P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -60 TJ=55°C VGS=-10V, ID=-20A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-7A gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Max VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Units V VDS=-24V, VGS=0V IDSS RDS(ON) Typ -5 µA ±100 nA -1.9 -3 V 27 34 A 36 40 55 mΩ -1 V -6 A 18 -0.75 mΩ S 920 pF 140 pF 90 pF 6 9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) 16.2 nC Qg(4.5V) Total Gate Charge (4.5V) 8.2 nC 2.9 nC 3.6 nC VGS=-10V, VDS=-15V, ID=-20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-20A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 14 Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=0.75Ω 8 ns 30 ns 22 ns 26 ns 23 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation P DSM is based on R θJA (<10s) and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be u sed if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev1: Sep. 2008 2/6 www.freescale.net.cn AOD417 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 60 -10V VDS=-5V 50 -6V ID=-10mA, 20 -4.5V 15 -ID(A) -ID (A) 40 VGS=0V 30 10 20 VGS=-3.5V 125°C 5 10 25°C -40°C 0 0 0 1 2 3 4 5 1 1.5 -VDS (Volts) Figure 1: On-Region Characteristics 2.5 3 3.5 Normalized On-Resistance 55 50 VGS=-4.5V 40 35 VGS=-10V 30 4.5 5 850 185 90 1.6 45 4 -VGS(Volts) Figure 2: Transfer Characteristics 60 RDS(ON) (mΩ ) 2 1.4 VGS=-10V ID=-20A 1.2 1 VGS=-4.5V ID=-7A 0.8 25 0.6 20 0 5 10 15 20 -50 25 -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 1.0E+01 ID=-20A 1.0E+00 1.0E-01 60 50 -IS (A) RDS(ON) (mΩ ) 70 125°C 1.0E-02 125°C 1.0E-03 40 -40°C 1.0E-04 30 25°C 25°C 1.0E-05 20 3 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOD417 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=-15V ID=-20A 1250 ID=-10mA, VGS=0V Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 1000 2 750 500 Crss Coss 250 0 0 0 3 6 9 12 15 0 18 1000.0 10 15 20 25 160 RDS(ON) limited 1.0 0.1 DC 100µs Power (W) 10µs 10.0 TJ(Max)=175°C TC=25°C 0.0 0.01 30 850 185 90 200 100.0 ID (Amps) 5 -VDS (Volts) Figure 8: Capacitance Characteristics -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=175°C TC=25°C 120 80 40 0.1 1 VDS (Volts) 10 0 0.0001 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=Tc+PDM.ZθJC.RθJC RθJC=3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD417 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 100 ID=-10mA, VGS=0V 80 TA=25°C 60 40 TA=150°C 50 Power Dissipation (W) -ID(A), Peak Avalanche Current 120 40 30 20 10 20 0 0 0.000001 0.00001 0.0001 0 0.001 25 60 25 50 20 40 Power (W) Current rating 30 15 20 5 10 0 50 75 100 125 150 Zθ JA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 125 150 175 850 185 90 TA=25°C 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 10 100 30 10 25 75 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 0 50 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 Ton 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOD417 P-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs td(off) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn