AON7407 20V P-Channel MOSFET General Description The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Features VDS -20V ID (at VGS=-4.5V) -40A RDS(ON) (at VGS =-4.5V) < 9.5mΩ RDS(ON) (at VGS =-2.5V) < 12.5mΩ RDS(ON) (at VGS =-1.8V) < 18mΩ D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current A -14.5 A -11.5 Avalanche Current C IAS, IAR -40 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 80 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C 3.1 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 12 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 29 PD TA=25°C 1/6 V -29 IDSM TA=70°C ±8 -100 IDM TA=25°C Units V -40 ID TC=100°C Maximum -20 -55 to 150 Typ 30 60 3.5 °C Max 40 75 4.2 Units °C/W °C/W °C/W www.freescale.net.cn AON7407 20V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -20 IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±8V Gate Threshold Voltage VDS=VGS, ID=-250µA -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -100 TJ=55°C -5 ±100 VGS=-4.5V, ID=-14A VGS=-2.5V, ID=-13A 9.3 12.5 mΩ VGS=-1.8V, ID=-11A 11.4 18 mΩ Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-10V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Qrr Turn-Off Fall Time 72 -0.52 S -1 V -35 A 3495 4195 pF 365 528 690 pF 255 425 595 pF 2.8 5.6 Ω 44 53 nC 35 VGS=-4.5V, VDS=-10V, ID=-14A VGS=-4.5V, VDS=-10V, RL=0.75Ω, RGEN=3Ω IF=-14A, dI/dt=500A/µs Body Diode Reverse Recovery Time I Body Diode Reverse Recovery Charge F=-14A, dI/dt=500A/µs mΩ 2795 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs V A 13.5 VSD Rg nA 10.5 TJ=125°C VDS=-5V, ID=-14A Crss -0.9 9.5 Forward Transconductance Output Capacitance -0.55 µA 7.6 gFS Coss Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ 26 80 9 nC 11 nC 18 ns 32 ns 136 ns 59 ns 33 100 40 120 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7407 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 -8V VDS=-5V -2.5V 80 -3V -1.8V 40 60 -ID(A) -ID (A) -4.5V -1.5V 40 20 125°C 20 25°C VGS=-1V 0 0 0 1 2 3 4 5 0 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 1.5 2 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 14 1.6 Normalized On-Resistance VGS=-1.8V 12 RDS(ON) (mΩ ) 0.5 10 VGS=-2.5V 8 VGS=-4.5V 6 4 VGS=-4.5V ID=-14A 1.4 V17 GS=-2.5V ID5 =-13A 1.2 2 VGS=-1.8V 10 ID=-11A 1 0.8 0 5 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 25 50 75 100 125 150 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 175 1.0E+02 ID=-14A 1.0E+01 20 40 15 -IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 10 125°C 25°C 1.0E-01 1.0E-02 1.0E-03 5 25°C 1.0E-04 1.0E-05 0 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7407 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 5 VDS=-10V ID=-14A 3500 Capacitance (pF) -VGS (Volts) 4 3 2 Ciss 3000 2500 2000 1500 Coss 1000 1 500 0 0 0 10 20 30 40 0 50 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 20 200 1000.0 10µs 100.0 RDS(ON) limited 10.0 10µs 100µs DC 1ms 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 TJ(Max)=150°C TC=25°C 160 Power (W) -ID (Amps) Crss 17 5 2 10 120 80 40 0.1 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 0 1 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=4.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Single Pulse 0.01 0.00001 0.0001 Ton 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7407 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 TA=25°C 100 Power Dissipation (W) -IAR (A) Peak Avalanche Current 1000 TA=100°C TA=150°C TA=125°C 10 20 10 0 1 10 100 1000 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 50 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 TA=25° C 40 1000 30 Power (W) -Current rating ID(A) 30 20 17 5 2 10 100 10 10 0 0 25 50 75 100 125 1 0.00001 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0 0.001 0.1 10 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H) 1000 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 40 RθJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 Ton 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7407 20V P-Channel MOSFET Gate Charge Test Circuit & W aveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds t off ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR = 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & W aveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn