AOT430 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT430 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 75V ID = 80 A (VGS = 10V) RDS(ON) < 11.5mΩ (VGS = 10V) TO-220 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current C C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Junction and Storage Temperature Range V A 200 IAR 45 A EAR 300 mJ 78 268 W 134 TJ, TSTG Thermal Characteristics Parameter 1/5 ±25 ID IDM PD TC=100°C Maximum Junction-to-Ambient A Maximum Junction-to-Case B Units V 80 TC=100°C Pulsed Drain Current Avalanche Current G Maximum 75 °C -55 to 175 Steady-State Symbol RθJA Steady-State RθJC Typ Max Units 45 0.45 60 0.56 °C/W °C/W www.freescale.net.cn AOT430 N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250uA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V gFS VSD VDS=5V, ID=80A Transconductance Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=125°C Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=30A µA 1 uA 2.7 4 V 9.8 11.5 16.0 19.0 200 DYNAMIC PARAMETERS Ciss Input Capacitance Coss 5 2 Units V 1 VGS=10V, ID=30A Static Drain-Source On-Resistance Max 75 TJ=55°C RDS(ON) Crss Typ VDS=60V, VGS=0V IDSS IS Min A 90 0.7 mΩ 1 S V 80 A 4700 pF 400 pF 180 pF 3 Ω 114 nC 33 nC Qgd Gate Drain Charge 18 nC tD(on) Turn-On DelayTime 21 ns tr Turn-On Rise Time 39 ns tD(off) Turn-Off DelayTime 70 ns tf Turn-Off Fall Time 24 ns trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/µs 53 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 143 ns nC VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev2: Feb 2007 2/5 www.freescale.net.cn AOT430 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 100 10V 8V 200 VDS=5V 80 6V 150 ID(A) ID (A) 60 5.5V 100 125°C 40 25°C 50 20 VGS=4.5V -40°C 0 0 0 2 4 6 8 10 3 3.5 VDS (Volts) Figure 1: On-Region Characteristics 4.5 5 5.5 6 VGS(Volts) Figure 2: Transfer Characteristics 13 2 Normalized On-Resistance 12 11 RDS(ON) (mΩ) 4 10 VGS=10V 9 8 7 1.8 VGS=10V, 30A 1.6 1.4 1.2 1 0.8 6 0 20 40 60 80 0.6 100 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 30 ID=30A 1.0E+01 25 125°C 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 20 15 1.0E-01 25°C 1.0E-02 10 1.0E-03 25°C -40°C 5 1.0E-04 0 0.0 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/5 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOT430 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 10 VDS=30V ID=30A Capacitance (nF) VGS (Volts) 8 6 4 6 Ciss 4 2 2 Coss Crss 0 0 40 80 120 0 0 15 30 45 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 60 1000 150 10µs 100 ID (Amps) ID(A), Peak Avalanche Current TJ(Max)=175°C, TC=25°C 1ms DC 10 10ms RDS(ON) limited 1 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W 1000 125 100 TA=25°C 75 TA=150°C 50 25 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 10: Single Pulse Avalanche capability In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AOT430 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 Power Dissipation (W) 100 Current rating ID(A) 80 60 40 20 250 200 150 100 50 0 0 0 0 25 50 75 100 125 150 TCASE (°C) Figure 12: Current De-rating (Note B) 5/5 175 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) www.freescale.net.cn