SHENZHENFREESCALE AOTF4185

AOTF4185
40V P-Channel MOSFET
General Description
The AOTF4185 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
VDS
ID (at VGS=10V)
-40V
-34A
RDS(ON) (at VGS=10V)
< 16mΩ
RDS(ON) (at VGS = 4.5V)
< 20mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
C
±20
V
-27
A
IDM
-100
Avalanche Current C
IAS, IAR
-42
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
88
mJ
Power Dissipation B
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
33
PD
TC=100°C
Junction and Storage Temperature Range
1/6
Units
V
-34
ID
TC=100°C
Maximum
-40
TJ, TSTG
Symbol
Steady-State
Steady-State
W
16
RθJC
-55 to 175
Typ
10
3
°C
Max
13
4.5
Units
°C/W
°C/W
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AOTF4185
40V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = -250µA, VGS = 0V
-40
-1
TJ = 55°C
-5
IGSS
Gate-Body leakage current
VDS = 0V, VGS = ±20V
Gate Threshold Voltage
VDS = VGS ID = -250µA
-1.7
ID(ON)
On state drain current
VGS = -10V, VDS = -5V
-120
±100
VGS = -10V, ID = -20A
Static Drain-Source On-Resistance
TJ=125°C
50
Diode Forward Voltage
IS = -1A,VGS = 0V
Maximum Body-Diode Continuous Current
Gate resistance
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2.5
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=-10V, VDS=-20V, ID=-20A
µA
nA
V
mΩ
S
-0.72
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
A
20
IS
Rg
16
23
VSD
Reverse Transfer Capacitance
13
16
VDS = -5V, ID = -20A
Output Capacitance
-2.5
19
Forward Transconductance
Crss
-1.85
VGS = -4.5V, ID = -15A
gFS
Coss
Max
V
VDS = -40V, VGS = 0V
VGS(th)
RDS(ON)
Typ
-1
V
-20
A
2550
pF
280
pF
190
pF
4
6
Ω
42
55
nC
18.6
nC
7
nC
Qgd
Gate Drain Charge
8.6
nC
tD(on)
Turn-On DelayTime
9.4
ns
tr
Turn-On Rise Time
20
ns
tD(off)
Turn-Off DelayTime
55
ns
tf
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=500A/µs
25
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
75
VGS=-10V, VDS=-20V,
RL= 1Ω, RGEN=3Ω
Turn-Off Fall Time
30
ns
33
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
Continuous
Drain Current
-20 max.
E.
The static characteristics
in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5%
-15the device mounted to a large heatsink, assuming
F. These curves are based on the junction-to-case thermal impedence which is measured with
a maximum junction temperature of TJ(MAX)=175°C.
0
G. The maximum current rating is limited by bond-wires.
32
2/6
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AOTF4185
40V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
VDS= -5V
-4.5V
100
80
-10V
-4V
60
ID(A)
ID (A)
80
60
40
-3.5V
40
125°C
20
20
VGS= -3V
25°C
0
0
0
1
2
3
4
1.5
5
-VDS (Volts)
Figure 1: On-Region Characteristics
20
2.5
3
3.5
4
4.5
-VGS(Volts)
Figure 2: Transfer Characteristics
5
Normalized On-Resistance
1.8
VGS= -4.5V
18
RDS(ON) (mΩ
Ω)
2
16
14
VGS= -10V
12
10
0
5
10
15
1.4
VGS= -4.5V
ID= -15A
1.2
1.0
0.8
IF=-6.5A,
dI/dt=100A/µs
20
25
30
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
35
VGS= -10V
ID= -20A
1.6
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+02
ID= -20A
30
1E+01
125°C
-IS (A)
RDS(ON) (mΩ
Ω)
1E+00
25
1E-01
125°C
20
1E-02
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-03
25°C
15
25°C
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,
1E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10
1E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V (Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
3/6
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOTF4185
40V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
10
VDS= -20V
ID= -20A
3500
Ciss
3000
Capacitance (pF)
-VGS (Volts)
8
6
4
2
2500
2000
1500
Crss
1000
Coss
500
0
0
0
5
10
15
20
25
30
35
40
45
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
30
1000
1000
TJ(Max)=175°C
Tc=25°C
-ID (Amps)
100µs
10
1
DC
RDS(ON)
limited
100
TJ(Max)=175°C
TC=25°C
0.01
0.1
IF=-6.5A, dI/dt=100A/µs
1
10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Zθ JA Normalized Transient
Thermal Resistance
1ms
10ms
100ms
Power (W)
100
0.1
40
-VDS (Volts)
Figure 8: Capacitance Characteristics
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.5°C/W
100
10
0.0001
0.01
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Case (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD NOT ASSUME ANY LIABILITY ARISING
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
OUT OF SUCH
0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT
SingleNOTICE.
Pulse
T
0.001
0.00001
4/6
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
100
1000
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AOTF4185
40V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
Current rating ID(A)
Power Dissipation (W)
40
20
10
30
20
10
0
0
0
25
50
75
100
125
150
175
TCASE (°
°C)
Figure 12: Power De-rating (Note B)
0
25
50
75
100
125
150
175
TCASE (°
°C)
Figure 13: Current De-rating (Note B)
ID(A), Peak Avalanche Current
1000
TA=25°C
100
10
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 14: Single Pulse Avalanche capability
5/6
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AOTF4185
40V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
td(on)
Vgs
-
DUT
Vgs
td(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
6/6
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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