TYSEMI 2SD1620

Transistors
SMD Type
Product specification
2SD1620
Features
Less power dissipation because of low VCE(sat),
permitting more flashes of light to be emitted.
Large current capacity and highly resistant to breakdown.
Excellent linearity of hFE in the region from low
current to high current.
Ultrasmall size supports high-density, ultrasmallsized
hybrid IC designs.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
Collector current (pulse)
ICP
5
A
PC
500
mW
PC *
1.3
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Collector dissipation
* Mounted on ceramic board(250mm2×0.8mm)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = 20 V, IE=0
Emitter cutoff current
IEBO
VEB = 4 V, IC=0
DC current gain
hFE
VCE = 2 V , IC = 3 A
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Collector-base breakdown voltage
fT
VCE = 10 V , IC = 50 mA
Cob
VCB = 10 V , f = 1.0MHz
Min
140
Typ
Max
Unit
100
nA
100
nA
210
200
MHz
30
VCE(sat) IC = 3 A , IB = 60 mA
0.3
pF
0.4
V
V(BR)CBO IC = 10ìA , IE = 0
30
V
Collector-emitter breakdown voltage
V(BR)CEX IC = 1mA , VBE = 3 V
20
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
10
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
6
V
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