Transistors SMD Type Product specification 2SD1620 Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low current to high current. Ultrasmall size supports high-density, ultrasmallsized hybrid IC designs. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6 V Collector current IC 3 A Collector current (pulse) ICP 5 A PC 500 mW PC * 1.3 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector dissipation * Mounted on ceramic board(250mm2×0.8mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 20 V, IE=0 Emitter cutoff current IEBO VEB = 4 V, IC=0 DC current gain hFE VCE = 2 V , IC = 3 A Gain bandwidth product Output capacitance Collector-emitter saturation voltage Collector-base breakdown voltage fT VCE = 10 V , IC = 50 mA Cob VCB = 10 V , f = 1.0MHz Min 140 Typ Max Unit 100 nA 100 nA 210 200 MHz 30 VCE(sat) IC = 3 A , IB = 60 mA 0.3 pF 0.4 V V(BR)CBO IC = 10ìA , IE = 0 30 V Collector-emitter breakdown voltage V(BR)CEX IC = 1mA , VBE = 3 V 20 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 10 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 6 V http://www.twtysemi.com [email protected] 4008-318-123 1 of 1