WILLAS 2SC2881 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES z Small Flat Package z High Transition Frequency z High Voltage z Pb-Free package is available 1. BASE 2. COLLECTOR RoHS product for packing code suffix ”G” 3. EMITTER Halogen free product for packing code suffix “H” APPLICATIONS z Power Amplifier and Voltage Amplifier Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Value Unit 120 V 120 V 5 V na Symbol ry MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Collector Current 800 mA Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ Pr eli RθJA mi IC PC ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 120 Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V V Collector cut-off current ICBO VCB=120V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA DC current gain hFE VCE=5V, IC=100mA VCE(sat) IC=500mA,IB=50mA 1 V VCE=5V, IC=0.5A 1 V Collector-emitter saturation voltage Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob VCE=5V,IC=100mA VCB=10V, IE=0, f=1MHz 80 240 120 MHz 30 pF CLASSIFICATION OF hFE 2012-0 RANK O Y RANGE 80–160 120–240 MARKING CO1 CY1 WILLAS ELECTRONIC CORP. WILLAS 2SC2881 SOT-89 Plastic-Encapsulate Transistors Outline Drawing SOT-89 .181(4.60) .173(4.39) ry .063(1.60) .055(1.40) mi na .061REF (1.55)REF .154(3.91) Pr eli .167(4.25) .102(2.60) .091(2.30) .023(0.58) .016(0.40) .047(1.2) .031(0.8) .060TYP (1.50)TYP .197(0.52) .013(0.32) .017(0.44) .014(0.35) .118TYP (3.0)TYP Dimensions in inches and (millimeters) Rev.C 2012-0 WILLAS ELECTRONIC CORP.