JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9018W TRANSISTOR (NPN) SOT–323 FEATURES Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=12V, IE=0 50 nA Collector cut-off current ICEO VCE=12V, IB=0 100 nA Emitter cut-off current IEBO VEB=3V, IC=0 100 nA DC current gain hFE VCE=5V, IC=1mA 70 190 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA 1.4 V Transition frequency Collector output capacitance fT Cob VCE=5V,IC=5mA , f=400MHz VCB=10V, IE=0, f=1MHz 600 MHz 2 pF CLASSIFICATION OF hFE RANK L H RANGE 70–105 105–190 MARKING J8 A,Oct,2010