WILLAS FM120-M+ THRU BAS21H FM1200-M 200mA Surface Mount Switching Diode-250V 1.0A SURFACE MOUNT SCHOTTKY BARRIERPackage RECTIFIERS -20V- 200V SOD-323 Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. power loss, high efficiency. • Low HIGH VOLTAGE • High current capability, low forward voltage drop. surge capability. DIODE • High SWITCHING • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal1 silicon junction. CATHODE standards of • Lead-free parts meet environmental 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 2 ANODE MIL-STD-19500 /228 • RoHS product for packing code suffix "G" SOD– 323 Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) retardant INFORMATION • Epoxy : UL94-V0 rated flameORDERING • Case : Molded Device plastic, SOD-123H Marking Shipping , BAS21H JS 3000/Tape & Reel • Terminals :Plated terminals, solderable per MIL-STD-750 MARKING DIAGRAM 0.031(0.8) Typ. 0.031(0.8) Typ. JS Method 2026is available Pb-Free package • Polarity : Indicated by cathode RoHS product for packing band code suffix ”G” Halogen free product Position : Any for packing code suffix “H” • Mounting Dimensions in inches and (millimeters) JS = Device Code Moisture Sensitivity Level 1 • Weight : Approximated 0.011 gram Polarity: Color band denotes cathode end MAXIMUM RATINGS RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM Ratings at 25℃ Rating ambient temperature unless otherwise specified. Symbol Value Unit Single phase half wave, 60Hz, resistive Continuous Reverse Voltage of inductive load. VR 250 Vdc For capacitive derate current by 20% Peakload, Forward Current IF 200 mAdc Peak Forward Surge Current I FM120-MH FM130-MH 625 mAdc FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH FM140-MH FM150-MH SYMBOL FM(surge) RATINGS Marking Code Maximum RecurrentCHARACTERISTICS Peak Reverse Voltage THERMAL VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Total DeviceVoltage Dissipation FR–5 Board,* VDC Characteristic Derate above 25°C Thermal Resistance Junction to Ambient superimposed on rated load (JEDEC method) Junction and Storage Typical Thermal Resistance (Note 2) Temperature Range Peak Forward Surge Current 8.3 ms single half sine-wave Typical Junction Capacitance (Note 1) *FR–5 Minimum Pad 13 30 14 Symbol PD20 14 40 21 28 Max 30 200 40 OFF CHARACTERISTICS CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 µAdc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) 2012-06 2012-1 120 200 35 Unit 50mW 42 56 70 105 140 80 100 150 200 60 RΘJA TJ, Tstg –55 to+150 °C CJ Symbol 1.0 30 40 120 -55 to +150 Min - 65 to +175 Max Unit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 115 150 mW/°C °C/W (VR = 200 Vdc, T J = 150°C) @T A=125℃ Rated DC Blocking Voltage NOTES: 10 100 1.57 635 (VR = Reverse 200 Vdc)Current at @T A=25℃ Maximum Average 18 80 RθJA Characteristic Maximum Forward Voltage at 1.0A DC Current Reverse Voltage Leakage 16 60 IFSM -55 to +125 Operating Temperature Range TJ (T = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS A Storage Temperature Range TSTG 15 50 IO Maximum Average Forward Rectified Current TA = 25°C 12 20 IR 0.50 0.70 – – IR V(BR) µAdc0.85 0.9 0.92 0 0.5 100 10 250 – – – 1000 1250 CD – 5.0 pF trr – 50 ns VF Vdc mV WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BAS21H FM1200-M 200mA Surface Mount Switching Diode-250V 1.0A SURFACE MOUNT SCHOTTKY BARRIERPackage RECTIFIERS -20V- 200V SOD-323 Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. 820 Ω profile surface mounted application in order to • Low optimize board space. +10 V 2 k loss, high efficiency. 0.1 µF • Low power IF 100 µHcapability, low forward voltage drop. • High current capability. • High0.1surge µF • Guardring for overvoltage protection. • Ultra high-speed switching. DUT junction. • Silicon epitaxial planar chip, metal silicon 50 Ω INPUT 50 Ω OUTPUT Lead-free parts meet environmental standards • PULSE SAMPLING of MIL-STD-19500 /228 GENERATOR OSCILLOSCOPE VR • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" BAS21H SOD-123H tp tr IF t 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. trr 10% t 0.071(1.8) 0.056(1.4) 90% iR(REC) = 3.0 mA IR OUTPUT PULSE (IF = IR = 30 mA; measured at iR(REC) = 3.0 mA) INPUT SIGNAL Mechanical data 0.040(1.0) 0.024(0.6) rated flame retardant • Epoxy : UL94-V0 Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 30 mA. 2. SOD-123H Input pulse is adjusted so IR(peak) is equal to 30 mA. plastic, • Case : MoldedNotes: 0.031(0.8) Typ. Notes: 3. tp » trr , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 Figure 1. Recovery Time Equivalent Test Circuit • Polarity : Indicated by cathode band • Mounting Position : Any 1200 • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) 7000 6000 5000 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. 800 half wave, 60Hz, resistive of inductive load. Single phase For capacitive load, derate current by 20% 600 RATINGS 4000 3000 6 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code 400 Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 VDC 20 200 Blocking Voltage Maximum DC Maximum Average Forward Rectified Current IR, REVERSE CURRENT (n A) VF, FORWARD VOLTAGE (mV) 1000 0.031(0.8) Typ. 1 Peak Forward Surge Current 8.3 ms 1 10 single half sine-wave 100 superimposed on rated load (JEDEC method) IO IFSM IF, FORWARD CURRENT (mA) RΘJA Typical Thermal Resistance (Note 2) Figure 1. Forward Voltage CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 5 13 304 14 40 15 50 16 60 18 80 10 100 115 150 120 200 213 28 35 42 56 70 105 140 302 40 50 60 80 100 150 200 1 0 1 1000 2 1.0 5 10 20 50 100 200 30 VR, REVERSE VOLTAGE (V) 40 Figure 2. Reverse Leakage 120 -55 to +150 300 -55 to +125 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BAS21H FM1200-M+ 200mA Surface Mount Switching Diode-250V 1.0A SURFACE MOUNT SCHOTTKY BARRIERPackage RECTIFIERS -20V- 200V SOD-323 Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOD-323 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .045(1.15) .091(2.30) Mechanical data .010(0.25) .016(0.40) • .057(1.45) .106(2.70) MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .075(1.90) .059(1.50) 0.040(1.0) 0.024(0.6) .043(1.10) 0.031(0.8) Typ. 0.031(0.8) Typ. .031(0.80) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .004(0.10)MAX. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 .008(0.20) .004(0.10) 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR .016(0.40)0.50 .010(0.25) 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .010(0.25)MIN. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC CORP Rev.C WILLAS ELECTRONIC CORP.