RoHS 2N3906 2N3906 TRANSISTOR (PNP) FEATURE Power dissipation Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range 1.EMITTER 2.BASE 3. COLLECTOR TJ, Tstg: -55℃ to +150℃ Symbol Test IC conditions MIN O 1 2 3 C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter D T ,. L TO-92 PCM : 0.625 W (Tamb=25℃) TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100µA , IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0 Emitter-base breakdown voltage V(BR)EBO IE= -100µA, IC=0 Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 µA Collector cut-off current ICEO VCE= -40 V , IB=0 -0.1 µA Emitter cut-off current IEBO -0.1 µA DC current gain R T V IC=0 hFE(2) VCE=-1 V, IC= -1mA 80 hFE(3) VCE=-1 V, IC= -10mA 100 hFE(4) VCE=-1 V, IC= -50mA 60 hFE(5) VCE=-1 V, IC= -100mA 30 300 IC= -10 mA, IB= -1 mA -0.25 V IC= -50 mA, IB= -5 mA -0.4 V -0.85 V IC= -50 mA, IB= -5 mA -0.95 V Cobo VCB=-5V,IE=0,f=100KHz 4.5 pF Cibo VEB=-0.5V,IE=0,f=100KHz 10 pF 4 dB Base-emitter saturation voltage VBE(sat) Output capacitance J E -5 60 VCE(sat) Noise figure VEB= -5 V , V VCE=-1 V, IC=-0.1mA C E L E N V -40 hFE(1) Collector-emitter saturation voltage Input Capacitance O -40 NF IC= -10 mA, IB= -1 mA -0.65 VCE=-5V,Ic=-100µA, f=1KHz,RS=1KΩ VCE= -20 V, IC= -10mA Transition frequency fT Delay Time td Vcc=-3V,VBE=-0.5V, 35 ns Rise Time tr Ic=-10mA,IB1=-1mA 35 ns Storage Time ts Vcc=-3V, Ic=-10mA 225 ns Fall Time tf IB1=IB2=-1mA 75 ns W f = 100MHz 250 MHz CLASSIFICATION OF hFE(3) Rank Range O Y G 100-200 200-300 300-400 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]