WINNERJOIN 2N3906

RoHS
2N3906
2N3906
TRANSISTOR (PNP)
FEATURE
Power dissipation
Collector current
ICM : -0.2
A
Collector-base voltage
V(BR)CBO : -40
V
Operating and storage junction temperature range
1.EMITTER
2.BASE
3. COLLECTOR
TJ, Tstg: -55℃ to +150℃
Symbol
Test
IC
conditions
MIN
O
1 2 3
C
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
D
T
,. L
TO-92
PCM : 0.625 W (Tamb=25℃)
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -100µA , IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1 mA , IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE= -100µA, IC=0
Collector cut-off current
ICBO
VCB= -40 V , IE=0
-0.1
µA
Collector cut-off current
ICEO
VCE= -40 V , IB=0
-0.1
µA
Emitter cut-off current
IEBO
-0.1
µA
DC current gain
R
T
V
IC=0
hFE(2)
VCE=-1 V, IC= -1mA
80
hFE(3)
VCE=-1 V, IC= -10mA
100
hFE(4)
VCE=-1 V, IC= -50mA
60
hFE(5)
VCE=-1 V, IC= -100mA
30
300
IC= -10 mA, IB= -1 mA
-0.25
V
IC= -50 mA, IB= -5 mA
-0.4
V
-0.85
V
IC= -50 mA, IB= -5 mA
-0.95
V
Cobo
VCB=-5V,IE=0,f=100KHz
4.5
pF
Cibo
VEB=-0.5V,IE=0,f=100KHz
10
pF
4
dB
Base-emitter saturation voltage
VBE(sat)
Output capacitance
J
E
-5
60
VCE(sat)
Noise figure
VEB= -5 V ,
V
VCE=-1 V, IC=-0.1mA
C
E
L
E
N
V
-40
hFE(1)
Collector-emitter saturation voltage
Input Capacitance
O
-40
NF
IC= -10 mA, IB= -1 mA
-0.65
VCE=-5V,Ic=-100µA,
f=1KHz,RS=1KΩ
VCE= -20 V, IC= -10mA
Transition frequency
fT
Delay Time
td
Vcc=-3V,VBE=-0.5V,
35
ns
Rise Time
tr
Ic=-10mA,IB1=-1mA
35
ns
Storage Time
ts
Vcc=-3V, Ic=-10mA
225
ns
Fall Time
tf
IB1=IB2=-1mA
75
ns
W
f = 100MHz
250
MHz
CLASSIFICATION OF hFE(3)
Rank
Range
O
Y
G
100-200
200-300
300-400
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