RoHS 2SA1213 2SA1213 TRANSISTOR (PNP) 1. BASE W (Tamb=25℃) 2. COLLECTOR1 A 2 V TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO R T Collector cut-off current ICBO Emitter cut-off current IEBO C E L DC current gain Collector-emitter saturation voltage E Base-emitter saturation voltage J E CLASSIFICATION OF hFE Rank W Range Marking IC C unless otherwise specified) Symbol O Test conditions O 3 3. EMITTER Operating and storage junction temperature range Transition frequency D T ,. L SOT-89 FEATURES Power dissipation PCM : 0.5 Collector current ICM : -2 Collector-base voltage V(BR)CBO : -50 MIN N MAX UNIT Ic=-100µA , IE=0 -50 V IC= -10mA , IB=0 -50 V IE=-100µA, IC=0 -5 V VCB=-50 V , IE=0 -0.1 µA VEB=-5 V , -0.1 µA IC=0 hFE 1 VCE=-2V, IC= -0.5A 70 hFE 2 VCE=-2V, IC= -2A 20 VCEsat IC=-1A, IB= -0.05A -0.5 V VBEsat IC=-1A, IB= -0.05A -1.2 V fT VCE= -2V, IC=-0.5A 100 O Y 70-140 120-240 240 MHz NO,NY WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]