WINNERJOIN 2SA673

RoHS
2SA673
2SA673
TRANSISTOR (PNP)
D
T
,. L
TO-92
FEATURE
Power dissipation
1. EMITTER
PCM : 0.4 W (Tamb=25℃)
2. COLLECTOR
Collector current
ICM: -0.5 A
Collector-base voltage
V(BR)CBO : -35 V
Operating and storage junction temperature range
3. BASE
IC
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
N
C
O
1 2 3
unless otherwise specified)
O
Test
R
T
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -10µA , IE=0
-35
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1 mA , IB=0
-35
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA, IC=0
-4
V
ICBO
VCB= -20 V , IE=0
hFE(1)*
VCE=-3V, IC= -10mA
60
hFE(2)
VCE=-3 V, IC=-500mA
10
VCEsat *
IC= -150mA, IB=-15mA
-0.6
V
VBE
VCE=-3 V, IC=-10mA
-0.75
V
C
E
L
Collector cut-off current
DC current gain
E
Collector-emitter saturation voltage
J
E
Base-emitter voltage
*Measured using pulse
-0.5
µA
320
CLASSIFICATION OF hFE(1)
W
Rank
Range
B
C
D
60-120
100-200
160-320
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