RoHS 2SC4115S 2SC4115S D T ,. L TO-92S TRANSISTOR (NPN) FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PD: 0.3 W (Tamb=25℃) 3. BASE Collector current I CM: 3 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ O IC N C O 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) R T Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 50µA , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=50µA, IC=0 6 V ICBO VCB=30V , IE=0 0.1 µA IEBO VEB= 5V , IC=0 0.1 µA hFE VCE=2 V, IC= 0.1A C E L Collector cut-off current Emitter cut-off current DC current gain J E E Collector-emitter saturation voltage* VCEsat Transition frequency z fT IC= 2A, 120 IB=0.1A VCE=2V, IC=0.5 A F=100MHz 560 0.5 200 V MHz Measured Using Pulse Current W CLASSIFICATION OF hFE Rank Range Q R S 120-270 180-390 270-560 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]