RoHS 2SD789 2SD789 TRANSISTOR (NPN) FEATURE Power dissipation 1. EMITTER PCM: 0.9 2. COLLECTOR W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 100 V Operating and storage junction temperature range 3. BASE ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter IC V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Emitter cut-off current DC current gain E Collector-emitter saturation voltage J E Output capacitance W Test R T C E L Collector cut-off current N unless otherwise specified) Symbol Collector-base breakdown voltage C O 123 TJ, Tstg: -55℃ to +150℃ Transition frequency D T ,. L TO-92MOD O conditions MIN MAX UNIT Ic= 10µA , IE=0 100 V IC=1mA , IB=0 50 V IE= 10µA, IC=0 6 V ICBO VCB= 80V, IE=0 1 µA IEBO VEB=6V, IC=0 0.2 µA hFE VCE=2V, IC= 100mA VCEsat IC= 1A, IB=100mA fT VCE=2V, IC= 10mA Cob VCE=10V, IE=0,f=1 MHz 100 800 0.3 V 80 MHz 30 pF CLASSIFICATION OF hFE Rank Range B C D E 100-200 160-320 250-500 400-800 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]