RoHS 2SB1197K 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 200 mW (Tamb=25℃) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-Base breakdown voltage V(BR)EBO Collector cut-off current DC current gain E Transition frequency J E unless otherwise specified) Test R T Collector-emitter saturation voltage Collector output capacitance O 1. 60¡ À0. 05 N conditions O MIN TYP MAX Ic=-50µA, IE=0 -40 V Ic=-1mA, IB=0 -32 V IE=-50µA, IC=0 -5 V VCB=-20V, IE=0 -0.5 µA IEBO VEB=-4V, IC=0 -0.5 µA hFE(1) VCE=-3V, IC=-100mA VCE(sat) IC=-0.5A, IB=-50mA fT Cob VCE=-5V, IC=-50mA f=100MHz VCE=-10V, IC=0 82 390 -0.5 50 200 12 f=1MHz W Range Marking 30 P Q R 82-180 120-270 180-390 AHP AHQ AHR WEJ ELECTRONIC CO. Http:// www.wej.cn V MHz CLASSIFICATION OF hFE(1) Rank UNIT ICBO C E L Emitter cut-off current C 1. 9 IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -800 mA Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range 2. 92¡ À0. 05 Power dissipation 0. 35 FEATURES PCM: D T ,. L SOT-23-3L 2SB1197K TRANSISTOR (PNP) E-mail:[email protected] pF