RoHS 2SC4097 TRANSISTOR(NPN) 1. BASE 2. EMITTER FEATURES Power dissipation 1. 25¡ À0. 05 200 mW (Tamb=25℃) O 2. 30¡ À0. 05 IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO C E L Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage Transition frequency O Test R T V(BR)CBO N Unit: mm unless otherwise specified) Symbol Collector-base breakdown voltage C 1. 30¡ À0. 03 Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range 2. 00¡ À0. 05 PCM: 1. 01 REF 3. COLLECTOR 0. 30 2SC4097 J E D T ,. L SOT-323 conditions MIN TYP MAX Ic=100µA, IE=0 40 V Ic=1mA, IB=0 32 V IE=100µA, IC=0 5 V ICBO VCB=20V, IE=0 1 µA IEBO VEB=4V, IC=0 1 µA hFE(1) VCE=3V, IC=10mA VCE(sat) IC=100mA, IB=10mA fT VCE=5V, IC=20mA, f=100MHz 250 MHz Cob VCB=10V, IE=0, f=1MHz 6 pF Collector output capacitance 82 390 0.4 CLASSIFICATION OF hFE(1) Rank W Range Marking P Q R 82-180 120-270 180-390 CP CQ CR WEJ ELECTRONIC CO. UNIT Http:// www.wej.cn E-mail:[email protected] V