RoHS 2SA1576A 1. BASE 2. EMITTER FEATURES Power dissipation 1. 25¡ À0. 05 1. 01 REF 3. COLLECTOR : 200 mW (Tamb=25℃) O 2. 30¡ À0. 05 IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage J E Transition frequency Collector output capacitance O Test conditions MIN TYP MAX -60 V Ic=-1mA, IB=0 -50 V V(BR)EBO IE=-50µA, IC=0 -6 V ICBO VCB=-60V, IE=0 -0.1 µA IEBO VEB=-6V, IC=0 -0.1 µA hFE(1) VCE=-6V, IC=-1mA VCE(sat) IC=-50mA, IB=-5mA fT VCE=-12V, IC=-2mA, f=30MHz 100 MHz Cob VCB=-12V, IE=0, f=1MHz 5 pF 120 560 -0.5 CLASSIFICATION OF hFE(1) W Rank Range Marking Q R S 120-270 180-390 270-560 FQ FR FS WEJ ELECTRONIC CO. UNIT Ic=-50µA, IE=0 C E L Emitter-base breakdown voltage N Unit: mm unless otherwise specified) R T Collector-base breakdown voltage C 1. 30¡ À0. 03 Collector current ICM : -150 mA Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range 2. 00¡ À0. 05 PCM D T ,. L TRANSISTOR (PNP) 0. 30 2SA1576A SOT-323 Http:// www.wej.cn E-mail:[email protected] V