RoHS 2SB834 2SB834 TRANSISTOR (PNP) D T ,. L TO-220 FEATURES Power dissipation 1. BASE PCM: 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO N C unless otherwise specified) Symbol Collector-base breakdown voltage O 123 O Test R T conditions MIN TYP MAX UNIT Ic=-100µA, IE=0 -60 V Ic=-50mA, IB=0 -60 V IE=-100µA, IC=0 -7 V VCE(sat) IC=-3A, IB=-0.3A -1 V Base-emitter voltage C E L VBE VCE=-5V, IC=-500mA -1 V Transition frequency fT VCE=-5V,I C=-500mA 9 MHz Cob VCB=-10V, IE=0, f=1MHz 150 pF 0.4 µs 1.7 µs 0.5 µs Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage J E Collector output capacitance W ICBO VCB=-60V, IE=0 -100 µA IEBO VEB=-7V, IC=0 -100 µA hFE(1) VCE=-5V, IC=-500mA 60 hFE(2) VCE=-5V, IC=-3A 20 Turn-on Time ton Storage Time tstg Turn-off Time toff 200 VCC=-30V, Ic=-2A, IB!=IB2=-0.2A CLASSIFICATION OF hFE(1) Rank Range WEJ ELECTRONIC CO. O Y 60-120 100-200 Http:// www.wej.cn E-mail:[email protected]