ETC UNR8231A|UN8231A

Transistors with built-in Resistor
UNR8231/8231A (UN8231/8231A)
Silicon NPN epitaxial planar type
Unit: mm
6.9±0.1
4.0
2.5±0.1
(0.8)
(1.0)
(0.2)
4.5±0.1
0.7
■ Features
0.65 max.
14.5±0.5
(1.0)
• High forward current transfer ratio hFE
• Resistor built-in type, allowing downsizing of the equipment
and reduction of the number of parts
• Available in a type with radial taping
(0.5)
For switching
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Collector-base voltage UNR8231
(Emitter open)
UNR8231A
Collector-emitter
UNR8231
voltage (Base open)
UNR8231A
VCBO
Rating
20
Unit
V
0.45+0.10
–0.05
1.05±0.05
2.5±0.5
2.5±0.5
60
VCEO
20
V
1
2
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
3
50
Collector current
IC
0.7
A
Peak collector current
ICP
1.5
A
Total power dissipation *
PT
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.45+0.10
–0.05
Internal Connection
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
R1(1 kΩ)
B
C
R2
(4.7 kΩ)
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage UNR8231
(Emitter open)
VCBO
Conditions
IC = 10 µA, IE = 0
UNR8231A
Collector-emitter
UNR8231
voltage (Base open)
UNR8231A
Min
Typ
Max
20
Unit
V
60
VCEO
IC = 1 mA, IB = 0
20
V
50
Collector-base cutoff current (Emitter open)
ICBO
VCB = 15 V, IE = 0
1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 15 V, IB = 0
10
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 14 V, IC = 0
0.5
mA
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 150 mA
2 100

VCE(sat)
IC = 500 mA, IB = 5 mA
Collector-emitter saturation voltage
*
Input resistance
R1
Resistance ratio
R1/R2
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
800
0.4
V
0.7
1.0
1.3
kΩ
0.016
0.021
0.025
200

MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2004
SJH00033BED
1
UNR8231/8231A
IC  VCE
1.2
Ta = 25°C
IB = 1.2 mA
1.0
1.2
Collector current IC (A)
Total power dissipation PT (W)
Copper foil area of 1cm2 or
more and thickness of
1.7mm for the collector
portion.
0.8
0.4
1.0 mA
0.8 mA
0.8
0.6 mA
0.6
0.4 mA
0.4
0.2 mA
0.2
0
0
0
40
80
120
160
0
Forward current transfer ratio hFE
VCE = 10 V
2 000
Ta = 75°C
1 600
25°C
1 200
−25°C
800
400
0
10−2
10−1
4
6
8
10
12
Cob  VCB
1
Collector current IC (A)
10
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
hFE  IC
2 400
2
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
2
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
PT  Ta
1.6
30
25
20
15
10
5
0
10−1
1
10
Collector-base voltage VCB (V)
SJH00033BED
102
102
IC /IB = 100
10
1
Ta = 75°C
25°C
−25°C
10−1
10−2
10−2
10−1
1
Collector current IC (A)
10
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Consult our sales staff in advance for information on the following applications:
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be liable for any defect which may arise later in your equipment.
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2003 SEP