Transistors with built-in Resistor UNR8231/8231A (UN8231/8231A) Silicon NPN epitaxial planar type Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 ■ Features 0.65 max. 14.5±0.5 (1.0) • High forward current transfer ratio hFE • Resistor built-in type, allowing downsizing of the equipment and reduction of the number of parts • Available in a type with radial taping (0.5) For switching ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Collector-base voltage UNR8231 (Emitter open) UNR8231A Collector-emitter UNR8231 voltage (Base open) UNR8231A VCBO Rating 20 Unit V 0.45+0.10 –0.05 1.05±0.05 2.5±0.5 2.5±0.5 60 VCEO 20 V 1 2 1: Emitter 2: Collector 3: Base MT-2-A1 Package 3 50 Collector current IC 0.7 A Peak collector current ICP 1.5 A Total power dissipation * PT 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.10 –0.05 Internal Connection Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion R1(1 kΩ) B C R2 (4.7 kΩ) E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage UNR8231 (Emitter open) VCBO Conditions IC = 10 µA, IE = 0 UNR8231A Collector-emitter UNR8231 voltage (Base open) UNR8231A Min Typ Max 20 Unit V 60 VCEO IC = 1 mA, IB = 0 20 V 50 Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0 1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 15 V, IB = 0 10 µA Emitter-base cutoff current (Collector open) IEBO VEB = 14 V, IC = 0 0.5 mA Forward current transfer ratio * hFE VCE = 10 V, IC = 150 mA 2 100 VCE(sat) IC = 500 mA, IB = 5 mA Collector-emitter saturation voltage * Input resistance R1 Resistance ratio R1/R2 Transition frequency fT VCB = 10 V, IE = −50 mA, f = 200 MHz 800 0.4 V 0.7 1.0 1.3 kΩ 0.016 0.021 0.025 200 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2004 SJH00033BED 1 UNR8231/8231A IC VCE 1.2 Ta = 25°C IB = 1.2 mA 1.0 1.2 Collector current IC (A) Total power dissipation PT (W) Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. 0.8 0.4 1.0 mA 0.8 mA 0.8 0.6 mA 0.6 0.4 mA 0.4 0.2 mA 0.2 0 0 0 40 80 120 160 0 Forward current transfer ratio hFE VCE = 10 V 2 000 Ta = 75°C 1 600 25°C 1 200 −25°C 800 400 0 10−2 10−1 4 6 8 10 12 Cob VCB 1 Collector current IC (A) 10 Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 2 400 2 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 2 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) PT Ta 1.6 30 25 20 15 10 5 0 10−1 1 10 Collector-base voltage VCB (V) SJH00033BED 102 102 IC /IB = 100 10 1 Ta = 75°C 25°C −25°C 10−1 10−2 10−2 10−1 1 Collector current IC (A) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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