Transistors 2SA0921 (2SA921) Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2 ■ Features 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit VCBO −120 V Collector-emitter voltage (Base open) VCEO −120 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −20 mA Peak collector current ICP −50 mA Collector power dissipation PC 250 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.15 –0.1 0.45+0.15 –0.1 2.5+0.6 –0.2 2.5+0.6 –0.2 1 2 3 2.3±0.2 Parameter Collector-base voltage (Emitter open) 1: Emitter 2: Collector 3: Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −120 V Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −120 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 Forward current transfer ratio * hFE VCE = −5 V, IC = −2 mA VCE(sat) IC = −20 mA, IB = −2 mA Collector-emitter saturation voltage Transition frequency VCB = −5 V, IE = 2 mA, f = 200 MHz fT Noise voltage Conditions VCE = −40 V, IC = −1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT NV Min Typ Max Unit V 180 −100 nA −1 µA 700 − 0.6 200 V MHz 150 mV Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S T hFE 180 to 360 260 to 520 360 to 700 Note) The part number in the parenthesis shows conventional part number. Publication date: January 2003 SJC00007BED 1 2SA0921 PC Ta IC VCE Ta = 25°C 200 100 −40 µA −16 −35 µA −30 µA −12 −25 µA −20 µA −8 −15 µA −10 µA −4 0 40 80 120 160 0 200 Ambient temperature Ta (°C) −2 1 000 0 −12 0 − 0.4 − 0.8 −10 −1 25°C Ta = 75°C −25°C −1.6 −2.0 fT I E 320 VCE = −5 V 800 600 Ta = 75°C 25°C 400 −1.2 Base-emitter voltage VBE (V) Transition frequency fT (MHz) Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) −10 −20 VCB = −5 V Ta = 25°C 280 −25°C 200 240 200 160 120 80 40 − 0.01 − 0.1 −1 −10 0 − 0.1 −100 Cob VCB 10 −10 −100 100 Noise voltage NV (mV) 8 7 6 5 4 3 2 VCE = −10 V GV = 80 dB Function = FLAT 80 Rg = 100 kΩ 60 22 kΩ 40 4.7 kΩ 20 1 0 −1 −10 −100 Collector-base voltage VCB (V) 0 − 0.01 − 0.1 Collector current IC (mA) SJC00007BED 0 0.1 1 10 Emitter current IE (mA) NV IC 120 IE = 0 f = 1 MHz Ta = 25°C 9 −1 Collector current IC (mA) Collector current IC (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob −8 −25°C −30 hFE IC IC / IB = 10 − 0.1 2 −6 Ta = 75°C −40 Collector-emitter voltage VCE (V) VCE(sat) IC −100 −4 25°C −10 −5 µA 0 VCE = −5 V −50 −45 µA Collector current IC (mA) Collector current IC (mA) Collector power dissipation PC (mW) 300 −60 IB = −50 µA −20 400 0 IC VBE −24 500 −1 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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