PANASONIC 2SB0642

Transistors
2SB0642 (2SB642)
Silicon PNP epitaxial planar type
For low-power general amplification
Unit: mm
2.5±0.1
(1.0)
R 0.9
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−60
V
Collector-emitter voltage (Base open)
VCEO
−50
V
Emitter-base voltage (Collector open)
VEBO
−7
V
Collector current
IC
−100
mA
Peak collector current
ICP
−200
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
(0.85)
0.45±0.05
0.55±0.1
3
2
(2.5)
1.25±0.05
Parameter
4.1±0.2
2.0±0.2
R 0.7
4.5±0.1
3.5±0.1
(1.5)
1.0±0.1
■ Absolute Maximum Ratings Ta = 25°C
(1.0)
(1.5)
2.4±0.2
• High forward current transfer ratio hFE
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(0.4)
6.9±0.1
■ Features
1
1: Base
2: Collector
3: Emitter
M-A1 Package
(2.5)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−60
V
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−7
Collector-base cutoff current (Emitter open)
ICBO
VCB = −20 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −20 V, IB = 0
Forward current transfer ratio *
hFE
VCE = −10 V, IC = −2 mA
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
Collector output capacitance
(Common-emitter reverse transfer)
Cob
Conditions
Min
Typ
Max
Unit
V
160
IC = −100 mA, IB = −10 mA
−1
µA
−1
µA
460

−1
V
VCB = −10 V, IE = 2 mA, f = 200 MHz
80
MHz
VCB = −10 V, IE = 0, f = 1 MHz
3.5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
160 to 260
210 to 340
290 to 460
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00045BED
1
2SB0642
PC  Ta
IC  VCE
Ta = 25°C
200
100
−250 µA
−40
−200 µA
−30
−150 µA
−20
−100 µA
−10
20
40
60
0
80 100 120 140 160
−4
0
Ambient temperature Ta (°C)
−8
−240
Collector current IC (mA)
Base current IB (µA)
−250
−200
25°C
Ta = 75°C
−150
−100
− 1.2
−80
0
Base-emitter voltage VBE (V)
− 0.4
− 0.8
Transition frequency fT (MHz)
500
300
−1.2
−1.6
Ta = 75°C
25°C
−25°C
200
100
−10
−100
Collector current IC (mA)
2
−25°C
−1 000
120
100
80
60
40
1
−100
−1 000
Cob  VCB
VCB = −10 V
Ta = 25°C
0
0.1
−10
Collector current IC (mA)
20
0
−1
Ta = 75°C
25°C
− 0.001
−1
−2.0
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
VCE = −10 V
IC / IB = 10
−1
fT  I E
160
140
400
−10
Base-emitter voltage VBE (V)
hFE  IC
600
−450
− 0.01
0
−1.8
−300
Base current IB (µA)
− 0.1
−40
−50
Forward current transfer ratio hFE
−25°C
−120
− 0.6
−150
0
VCE(sat)  IC
−160
0
0
−20
VCE = −5 V
−200
−300
0
−20
IC  VBE
VCE = −5 V
Ta = 25°C
−350
−16
−30
Collector-emitter voltage VCE (V)
IB  VBE
−400
−12
−40
−10
−50 µA
Collector-emitter saturation voltage VCE(sat) (V)
0
VCE = −5 V
Ta = 25°C
−50
Collector current IC (mA)
Collector current IC (mA)
Collector power dissipation PC (mW)
300
−60
IB = −300 µA
−50
400
0
IC  I B
−60
500
10
Emitter current IE (mA)
SJC00045BED
100
8
IE = 0
f = 1 MHz
Ta = 25°C
7
6
5
4
3
2
1
0
−1
−10
−100
Collector-base voltage VCB (V)
2SB0642
NF  IE
IC = −1 mA
f = 10.7 MHz
Ta = 25°C
3
2
16
4
3
2
14
12
f = 100 Hz
10
1 kHz
8
10 kHz
6
4
1
1
2
0
−5
−10
−15
−20
−25
0
0.01
−30
0.1
1
Collector to emitter voltage VCE (V)
Emitter current IE (mA)
h Parameter  IE
h Parameter  VCE
hfe
VCE = −5 V
f = 270 Hz
Ta = 25°C
1
10
Emitter current IE (mA)
ICBO  Ta
100
VCB = −10 V
hfe
100
h Parameter
hoe (µS)
10
hoe (µS)
10
hie (kΩ)
hre (× 10−4)
1
Emitter current IE (mA)
10
hre (× 10−4)
hie (kΩ)
1
0.1
0
0.1
10
ICBO (Ta)
ICBO (Ta = 25°C)
0
100
h Parameter
VCB = −5 V
R = 50 kΩ
18 g
Ta = 25°C
VCB = −5 V
f = 1 kHz
Rg = 2 kΩ
Ta = 25°C
5
4
20
Noise figure NF (dB)
5
NF  IE
6
Noise figure NF (dB)
Common emitter reverse transfer capacitance Cre (pF)
Cre  VCE
6
10
1
−1
−10
IE = 2 mA
f = 270 Hz
Ta = 25°C
−100
Collector-emitter voltage VCE (V)
SJC00045BED
1
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL