IRFZ44ND N-Channel Enhancement-Mode MOSFET Die VDS 55V RDS(ON) 20mΩ ID 49A Chip Geometry H C EN ET R T NF duct GE ew Pro N D TM Source G Gate S Physical Characteristics Features • Die size : 4040 X 1890µm (159 X 74.4 mils) • Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag • Metal Thickness: Top: 3.0µm Back: 1.4µm • Die thickness: 9 - 13 mils • Bonding Area: Source: Full metalized surface of source region Gate: 407 x 506µm • Recommended Wire Bonding: Source: 12 mil ∅ Al wire (2 wires preferred) Gate: 5 mil ∅ Al wire • Dynamic dv/dt Rating • Repetitive Avalanche Rated • 175°C Operating Temperature • Ease of Paralleling • Fast Switching for High Efficiency • Simple Drive Requirements Note: More source wires can further improve performance Maximum Ratings and Thermal Characteristics (T Parameter A = 25°C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 55 V Gate-Source Voltage VGS ± 20 V ID 49 35 A IDM 160 PD 94 W EAS 210 mJ IAR 25 A EAR 11 mJ TJ, Tstg –55 to 175 °C Junction-to-Case Thermal Resistance RθJC 1.6 Junction-to-Ambient Thermal Resistance RθJA 62 TC = 25°C TC = 100°C Continuous Drain Current VGS =10V Pulsed Drain Current (1) Maximum Power Dissipation TC = 25°C Single Pulse Avalanche Energy (2) (1) Avalanche Current Repetitive Avalanche Energy (1) Operating Junction and Storage Temperature Range °C/W Notes: (1) Repetitive rating; pulse width limited by max. junction temperature (2) VDD = 25V, starting TJ = 25°C, L = 470µH, RG = 25Ω, IAS = 25A (3) Maximum ratings are based on die packaged in TO-220. Actual ratings may vary depending on actual assembly method used. 5/8/01 IRFZ44ND N-Channel Enhancement-Mode MOSFET Die Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0V, ID = 250µA 55 – – V VGS = 10V, ID = 25A – 16 20 VGS = 6V, ID = 23A – 18 22 Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance(1) RDS(on) Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 – 4.0 V gfs VDS = 25V, ID = 25A 17 78 – S Drain-Source Leakage Current IDSS VDS = 55V, VGS = 0V – – 25 µA Gate-Source Leakage IGSS VGS = ± 20V, VDS = 0V – – ± 100 nA VDS = 44V, ID = 25A,VGS = 5V – 29 40 – 60 65 – 11 — – 13 — – 19 34 – 185 240 – 85 119 – 165 210 (1) Forward Transconductance mΩ Dynamic Total Gate Charge(1) Qg (1) Gate-Source Charge Qgs Gate-Drain (“Miller”) Charge(1) Qgd (1) Turn-On Delay Time ID = 25A td(on) (1) Rise Time tr Turn-Off Delay Time VDS = 44V, VGS = 10V (1) td(off) Fall Time(1) tf VDD = 28V ID = 25A, RG = 12Ω RD = 1.1Ω, VGEN = 10V nC ns Input Capacitance Ciss VGS = 0V – 3223 – Output Capacitance Coss VDS = 25V – 308 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 135 – IS – – – 49 ISM – – – 160 VSD IS = 25A, VGS = 0V – 0.93 1.3 V – 53 – ns – 93 – nC pF Source-Drain Diode Continuous Source Current (2) Pulsed Source Current Diode Forward Voltage(1) (1) Source-Drain Reverse Recovery Time trr (1) Source-Drain Reverse Recovery Charge Qrr IF = 25A, di/dt = 100A/µs A Notes: (1) Pulse width ≤ 300µs; duty cycle ≤ 2% (2) Repetitive rating; pulse width limited by max. junction temperature VDD Switching Test Circuit RD VIN ton Switching Waveforms td(on) tr VOUT D VGEN td(off) tf 90 % 90% Output, VOUT RG toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH IRFZ44ND N-Channel Enhancement-Mode MOSFET Die Ratings and Characteristic Curves Fig. 1 - Output Characteristics 7.0V 6.0V VDS = 10V 140 10V 80 120 ID — Drain Current (A) ID — Drain-toSource Current (A) VGS = Fig. 2 - Transfer Characteristics 100 160 100 5.0V 80 60 4.5V 40 60 40 20 4.0V 20 3.5V 0 0 0 2 4 6 8 1 10 2 3 4 5 6 7 VGS — Gate-to-Source Voltage (V) VDS — Drain-to-Source Voltage (V) Fig. 3 - On Resistance vs. Drain Current Fig. 4 - Capacitance 4000 0.04 VGS = 4.5V Ciss 3500 5V 3000 Capacitance (pF) 0.03 6V 0.02 10V 2500 f = 1MHz VGS = 0V 2000 1500 1000 0.01 Crss Coss 500 0 0 20 40 60 80 100 120 140 160 Fig. 5 - Gate Charge VGS — Gate-to-Source Voltage (V) 10 VDS = 44V ID = 25A 8 6 4 2 0 10 20 30 40 Qg — Gate Charge (nC) 10 20 30 40 50 VDS — Drain-to-Source Voltage (V) ID — Drain Current (A) 0 0 0 50 60 60 IRFZ44ND N-Channel Enhancement-Mode MOSFET Die Ratings and Characteristic Curves Fig. 7 – On-Resistance vs. Gate-to-Source Voltage Fig. 6 - Source-Drain Diode Forward Voltage 0.04 100 VGS = 0V RDS(ON) -- On-Resistance (Ω) I D = 25A 10 1 0.1 0.03 0.02 0.01 0 0.01 0 0.2 0.4 0.6 0.8 1 1.2 4 1.4 VSD — Source-to-Drain Voltage (V) 6 7 8 9 10 VGS -- Gate-to-Source Voltage (V) Fig. 8 – Breakdown Voltage vs. Junction Temperature Fig. 9 – Threshold Voltage 2.8 82 80 VGS(th) -- Gate-to-Source Threshold Voltage (V) BVDSS -- Drain-to-Source Breakdown Voltage (V) 5 78 76 74 72 70 68 2.4 2 1.6 1.2 66 64 --50 --25 0 25 50 75 100 125 TJ -- Junction Temperature (°C) 150 175 0.8 --50 --25 0 25 50 75 100 125 150 175 IRFZ44ND N-Channel Enhancement-Mode MOSFET Die Ratings and Characteristic Curves Fig. 10 – On-Resistance vs. Junction Temperature Fig. 11 – Thermal Impedance 1 2.0 VGS = 10V ID = 25A D = 0.5 RΘJC (norm) -- Normalized Thermal Impedance 1.8 1.6 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 0.2 PDM 0.1 0.1 t2 Single Pulse 0.01 0.0001 175 0.001 0.01 0.1 10 Fig. 13 – Maximum Safe Operating Area Fig. 12 – Power vs. Pulse Duration 1000 1000 800 ID -- Drain Current (A) RDS(ON) Limit 600 400 10 0µ s 100 1m s 100ms 10 ms 10 DC 200 0 0.0001 1 Pulse Duration (sec.) TJ -- Junction Temperature (°C) Power (W) t1 0.05 1 0.001 0.01 0.1 Pulse Duration (sec.) 1 10 1 10 VDS -- Drain-Source Voltage (V) 100