DATA SHEET SILICON POWER TRANSISTOR 2SA1646, 2SA1646-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1646 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for highcurrent switching. FEATURES • Mold package that does not require an insulating board or insulation bushing • Fast switching speed • Low collector-to-emitter saturation voltage: VCE(sat) = −0.3 V MAX. @IC = −6 A QUALITY GRADES • Standard ? Please refer to “Quality Grades on NEC Semiconductor Devices” ? (Document No. C11531E) published by NEC Corporation to know ? the specification of quality grade on the devices and its ? recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO −150 V Collector to emitter voltage VCEO −100 V Emitter to base voltage VEBO −7.0 V Collector current ID(DC) −10 A Collector current IC(pulse) −20 A Base current IB(DC) −6.0 A PW ≤ 300 µs, duty cycle ≤ 10% Total power dissipation PT Tc = 25°C 40 W Total power dissipation PT Ta = 25°C 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Electrode Connection ? The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16120EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1646, 2SA1646-Z ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. Unit Collector cutoff current ICBO VCB = −100 V, IE = 0 −10 µA Emitter cutoff current IEBO VEB = −5 V, IC = 0 −10 µA DC current gain hFE1* VCE = −2 V, IC = −0.5 A 100 DC current gain hFE2* VCE = −2 V, IC = −2 A 100 DC current gain hFE3* VCE = −2 V, IC = −6 A 60 Collector saturation voltage VCE(sat)1* IC = −6 A, IB = −0.3 A −0.3 V Collector saturation voltage VCE(sat)2* IC = −8 A, IB = −0.4 A −0.5 V Base saturation voltage VBE(sat)1* IC = −6 A, IB = −0.3 A −1.2 V Base saturation voltage VBE(sat)2* IC = −8 A, IB = −0.4 A −1.5 V Gain bandwidth product fT − 400 − − VCE = −10 V, IC = −0.5 A 150 MHz Collector capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 250 pF Turn-on time ton 0.3 µs Storage time tstg IC = −6 A, IB1 = −IB2 = −0.3 A, RL = 8.3 Ω, VCC = −50 V 1.5 µs 0.4 µs Refer to the test circuit. Fall time tf * Pulse test PW ≤ 350 µs, Duty Cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME TEST CIRCUIT Base current waveform Collector current waveform 2 MAX. Data Sheet D16120EJ1V0DS 2SA1646, 2SA1646-Z IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Case Temperature TC (°C) Collector Current IC (A) Collector Current IC (A) Case Temperature TC (°C) Single pulse Collector to Emitter Voltage VCE (V) Collector Saturation Voltage VCE(sat) (V) DC Current Gain hFE Pulse test Collector to Emitter Voltage VCE (V) Collector Current IC (A) Pulse test Collector Current IC (A) Data Sheet D16120EJ1V0DS 3 4 )DOO7LPHWIµ V 6WRUDJH7LPHWVWJµ V 7XUQ2Q7LPHWRQµ V &ROOHFWRU&DSDFLWDQFH&RES) %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 3XOVHWHVW *DLQ%DQGZLGWK3URGXFWI70+] 2SA1646, 2SA1646-Z &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ &ROOHFWRUWR%DVH9ROWDJH9&%9 Data Sheet D16120EJ1V0DS &ROOHFWRU&XUUHQW,&$ 2SA1646, 2SA1646-Z [MEMO] Data Sheet D16120EJ1V0DS 5 2SA1646, 2SA1646-Z • The information in this document is current as of July, 2001. The information is subject to change without notice. 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