SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit VGS "20 V Gate-Source Voltage 75a TC = 25_C Continuous Drain Current (TJ = 175_C) ID TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH IDM 240 IAR 60 EAR PD TA = 25_C (TO-263)d Operating Junction and Storage Temperature Range 280 A mJ 250c TC = 25_C (TO-220AB and TO-263) Power Dissipation 55 3.7 W TJ, Tstg –55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter PCB Mount Junction-to-Ambient Junction-to-Case (TO-263)d Free Air (TO-220AB) 40 RthJA RthJC 62.5 _C/W C/W 0.6 Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70283 S-05111—Rev. F, 10-Dec-01 www.vishay.com 2-1 SUP/SUB75N06-08 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 2.0 3.0 4.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 60 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) V VDS = 60 V, VGS = 0 V, TJ = 125_C 50 VDS = 60 V, VGS = 0 V, TJ = 175_C 150 VDS = 5 V, VGS = 10 V 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs mA m A 0.007 0.008 VGS = 10 V, ID = 30 A, TJ = 125_C 0.012 VGS = 10 V, ID = 30 A, TJ = 175_C 0.016 VDS = 15 V, ID = 30 A nA 30 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 270 Total Gate Chargec Qg 85 Gate-Source Chargec Qgs 28 Gate-Drain Chargec Qgd 26 Turn-On Delay Timec td(on) 20 40 tr 95 200 65 120 20 60 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 4800 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 75 A VDD = 30 V, RL = 0.47 W ID ^ 75 A, VGEN = 10 V, RG = 2.5 W tf 910 pF 120 nC ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 75 Pulsed Current ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = 75 A , VGS = 0 V trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/ms m 1.0 1.3 V 67 120 ns 6 8 A 0.2 0.48 mC Notes a. Pulse test: pulse width v 300 msec, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70283 S-05111—Rev. F, 10-Dec-01 SUP/SUB75N06-08 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 200 VGS = 10, 9, 8 V 7V 200 150 I D – Drain Current (A) I D – Drain Current (A) 6V 150 100 5V 50 100 TC = 125_C 50 25_C 4V –55_C 0 0 0 2 4 6 8 0 10 1 2 VDS – Drain-to-Source Voltage (V) Transconductance 5 6 7 On-Resistance vs. Drain Current 0.010 TC = –55_C 100 25_C 80 0.008 r DS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) 4 VGS – Gate-to-Source Voltage (V) 120 125_C 60 40 20 0 VGS = 10 V 0.006 VGS = 20 V 0.004 0.002 0.000 0 20 40 60 80 100 0 20 40 VGS – Gate-to-Source Voltage (V) 60 80 100 120 ID – Drain Current (A) Capacitance Gate Charge 20 7000 V GS – Gate-to-Source Voltage (V) 6000 C – Capacitance (pF) 3 Ciss 5000 4000 3000 2000 Coss Crss 1000 0 VDS = 30 V ID = 75 A 16 12 8 4 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Document Number: 70283 S-05111—Rev. F, 10-Dec-01 60 0 25 50 75 100 125 150 175 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUP/SUB75N06-08 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 150_C TJ = 25_C 10 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 500 100 I D – Drain Current (A) I D – Drain Current (A) 100 60 40 10 ms Limited by rDS(on) 80 100 as 1 ms 10 TC = 25_C Single Pulse 20 0 10 ms 100 ms dc 1 0 25 50 75 100 125 150 175 0.1 TC – Case Temperature (_C) 1 10 VDS – Drain-to-Source Voltage (V) 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70283 S-05111—Rev. F, 10-Dec-01