ETC UPC2757T-E3

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µPC2757T, µPC2758T
SILICON MMIC 1st FREQUENCY DOWN-CONVERTER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
The µPC2757T and µPC2758T are silicon monolithic integrated circuits designed as 1st down-converters for L
band mobile communications. The ICs consist of mixer and local amplifier. The µPC2757T features low current
consumption and the µPC2758T features improved intermodulation. From these two version, you can chose either
IC corresponding to your system design.
The µPC2757T and µPC2758T are manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process.
This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from
external pollution and prevent corrosion and migration. Thus, these products have excellent performance, uniformity
and reliability.
FEATURES
• Wide band operation
: fRFin = 0.1 GHz to 2.0 GHz
• High-density surface mounting : 6-pin minimold
• Low voltage operation
: Supply voltage 3.0 V TYP.
• Low power consumption 15 mW : µPC2757T
• Power-save function
: µPC2757T, µPC2758T
ORDERING INFORMATION
Part Number
Markings
Product Type
µPC2757T-E3
C1X
Low power
consumption
µPC2758T-E3
C1Y
High output IP3
Package
6-pin minimold
Supplying Form
Embossed tape 8-mm wide.
Pin 1, 2, 3 face to perforation side of the tape.
QTY 3 kp/Reel.
Note To order evaluation samples, please contact local NEC sales office. (Part number for sample order:
µPC2757T, µPC2758T)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10716EJ4V0DS00 (4th edition)
Date Published April 1999 N CP(K)
Printed in Japan
The mark
shows major revision points.
©
1995, 1999
µPC2757T, µPC2758T
PIN CONNECTIONS
(Bottom View)
C1X
(Top View)
3
2
1
Pin No.
4
4
3
5
5
2
6
6
1
Example marking is for µPC2757T
Pin Name
1
RF input
2
GND
3
LO input
4
PS
5
VCC
6
IF output
PRODUCT LINE-UP (TA = +25 °C, VCC = 3.0 V, ZL = ZS = 50 Ω)
Items
Part No.
No RF
ICC
(mA)
900 MHz 1.5 GHz 1.9 GHz 900 MHz
SSB NF SSB NF SSB NF
CG
(dB)
(dB)
(dB)
(dB)
1.5 GHz
CG
(dB)
1.9 GHz
CG
(dB)
900 MHz
IIP3
(dBm)
1.5 GHz
IIP3
(dBm)
1.9 GHz
IIP3
(dBm)
µPC2757T
µPC2757TB
5.6
10
10
13
15
15
13
−14
−14
−12
11
9
10
13
19
18
17
−13
−12
−11
8.5
9
11
11
15
13
13
−10
−9
−7
900 MHz
PO(sat)
(dBm)
1.5 GHz
PO(sat)
(dBm)
1.9 GHz
PO(sat)
(dBm)
900 MHz
RFIo
(dB)
1.5 GHz
RFIo
(dB)
1.9 GHz
RFIo
(dB)
−3
−
−8
−
−
−
µPC2758T
µPC2758TB
µPC8112T
µPC8112TB
Items
Part No.
µPC2757T
µPC2757TB
µPC8112T
µPC8112TB
+1
−
−4
−
−
Packages
6-pin minimold
Emitter follower
µPC2758T
µPC2758TB
IF Output
Configuration
6-pin super minimold
6-pin minimold
−
6-pin super minimold
−2.5
−3
−3
−80
−57
−55
6-pin minimold
Open collector
6-pin super minimold
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
To know the associated product, please refer to each latest data sheet.
Notice µPC2757 and µPC2758’s IIP3 are calculated with ∆IM3 = 3 which is the same IM3 inclination as µPC8112.
On the other hand, OIP3 of Standard characteristics in page 4 is cross point IP.
2
Data Sheet P10716EJ4V0DS00
µPC2757T, µPC2758T
INTERNAL BLOCK DIAGRAM (µPC2757T, µPC2758T IN COMMON)
RF
input
IF
output
POWER
SAVE
LO
input
VCC
GND
To know the detail in associated product, please refer to its latest data sheet.
Data Sheet P10716EJ4V0DS00
3
µPC2757T, µPC2758T
PIN EXPLANATION (BOTH µPC2757T, 2758T)
Pin
No.
Pin
Name
1
RF input
Applied
Voltage (V)
–
Pin Voltage
Note
(V)
1.2
Function and Application
This pin is RF input for mixer
designed as double balance type.
This circuit contributes to suppress
spurious signal with minimum LO
and bias power consumption.
Also this symmetrical circuit can
keep specified performance insensitive to process-condition distribution.
2
GND
GND
–
This pin is ground of IC.
Must be connected to the system
ground with minimum inductance.
Ground pattern on the board should
be formed as wide as possible.
(Track length should be kept as
short as possible.)
3
LO input
–
1.3
This pin is LO input for local buffer
designed as differential amplifier.
Recommendable input level is –15
to –0 dBm. Also this symmetrical
circuit can keep specified
performance insensitive to processcondition distribution.
4
PS
VCC/GND
–
Equivalent Circuit
VCC
To IF
Amp.
From
LO
1
–
VCC
Mixer
3
VCC
This pin is for power-save function.
This pin can control ON/OFF
operation with bias as follows;
VPS
Bias: V
Operation
≥ 2.5
ON
0 to 0.5
OFF
4
Rise time/fall time using this pin are
approximately 10 µs.
5
VCC
2.7 to 3.3
–
Supply voltage 3.0 ±0.3 V for
operation. Must be connected
bypass capacitor. (example: 1 000
pF) to minimize ground impedance.
6
IF output
–
1.7
This pin is output from IF buffer
amplifier designed as single-ended
push-pull type. This pin is assigned
for emitter follower output with lowimpedance. In the case of
connecting to high-impedance
stage, please attach external
matching circuit.
Note Each pin voltage is measured with VCC = 3.0 V
4
Data Sheet P10716EJ4V0DS00
–
VCC
6
µPC2757T, µPC2758T
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25 °C
5.5
V
PS Pin Voltage
VPS
TA = +25 °C
5.5
V
Power Dissipation of Package Allowance
PD
Mounted on 50 × 50 × 1.6 mm
double sided copper clad epoxy
glass board at TA = +85 °C
280
mW
Operating Ambient Temperature
TA
–40 to +85
°C
Storage Temperature
Tstg
–55 to +150
°C
RECOMMENDED OPERATING RANGE
Symbol
MIN.
TYP.
MAX.
Unit
Supply Voltage
Parameters
VCC
2.7
3.0
3.3
V
Operating Ambient Temperature
TA
–40
+25
+85
°C
PLOin
–15
–10
0
dBm
LO Input Level
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = VPS = 3.0 V, PLOin = –10 dBm, ZL = ZS = 50 Ω)
Parameters
Symbol
µPC2757T
Conditions
MIN.
TYP.
5.6
µPC2758T
MAX.
MIN.
TYP.
MAX.
11
Unit
Circuit Current
ICC
No input signal
3.7
7.7
6.6
14.8
dB
RF Frequency
Response
fRFin
CG ≥ (CG1 –3 dB)
fIFout = 130 MHz constant
0.1
2.0
0.1
2.0
GHz
IF Frequency
Response
fIFout
CG ≥ (CG1 –3 dB)
fRFin = 0.8 GHz constant
20
300
20
300
MHz
Conversion Gain 1
CG1
fRFin = 0.8 GHz, fIFout = 130 MHz
PRFin = –40 dBm, Upper local
12
15
18
16
19
22
dB
Conversion Gain 2
CG2
fRFin = 2.0 GHz, fIFout = 250 MHz
PRFin = –40 dBm, Lower local
10
13
16
14
17
20
dB
Single Sideband Noise
Figure 1
SSB NF1
fRFin = 0.8 GHz, fIFout = 130 MHz,
Upper local
10
13
9
12
dB
Single Sideband Noise
Figure 2
SSB NF2
fRFin = 2.0 GHz, fIFout = 250 MHz,
Lower local
13
16
13
15
dB
Maximum IF Output
Level 1
PO(sat) 1
fRFin = 0.8 GHz, fIFout = 130 MHz
PRFin = –10 dBm, Upper local
–11
–3
–7
+1
dBm
Maximum IF Output
Level 2
PO(sat) 2
fRFin = 2.0 GHz, fIFout = 250 MHz
PRFin = –10 dBm, Lower local
–11
–8
–7
–4
dBm
STANDARD CHARACTERISTICS FOR REFERENCE
(Unless otherwise specified: TA = +25°C, VCC = VPS = 3.0 V, PLOin = –10 dBm, ZL = ZS = 50 Ω)
Parameters
Symbol
Conditions
Reference Value
µPC2757T
µPC2758T
Unit
Output 3rd intercept point
OIP3
fRFin = 0.8 to 2.0 GHz, fIFout = 0.1 GHz,
Cross point IP
+5
+11
dBm
LO leakage at RF pin
LOrf
fLOin = 0.8 to 2.0 GHz
–35
–30
dBm
LO leakage at IF pin
LOif
fLOin = 0.8 to 2.0 GHz
–23
–15
dBm
Power-saving current
IPS
VPS = 0.5 V
0.1
0.1
µA
Remark IIP3 is determined by comparing two method; theoretical calculation and cross point of IM3 curve.
IIP3 = (∆IM3 × Pin + CG – IM3) ÷ (∆IM3 – 1) (dBm) [∆IM3: IM3 curve inclination in linear range]
Data Sheet P10716EJ4V0DS00
5
µPC2757T, µPC2758T
SCHEMATIC SUPPLEMENT FOR RF, IF SPECIFICATIONS
Note
µPC2757T
µPC2758T
Unit
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
CG1
12
15
18
16
19
22
dB
CG1 – 3 dB
9
12
15
13
16
19
dB
RF FREQUENCY RESPONSE
Conversion Gain CG (dB)
fIFout = 130 MHz
PRFin = –40 dBm
CG1
CG1 –3 dB
Guaranteed
gain level
0.1
0.8
2.0
RF Frequency fRFin (GHz)
IF FREQUENCY RESPONSE
Conversion Gain CG (dB)
fRFin = 0.8 GHz
PRFin = –40 dBm
CG1
CG1 –3 dB
Guaranteed
gain level
10
150
IF Frequency fIFout (MHz)
6
Data Sheet P10716EJ4V0DS00
300
µPC2757T, µPC2758T
TEST CIRCUIT
µPC2757T, µPC2758T
POWER
SAVE
(Top View)
Signal Generator
1 000 pF
50 Ω
3
LOin
PS
4
2
GND
VCC
5
C2
Signal Generator
3 300 pF
3V
C3
1 000 pF
1
50 Ω
RFin
IFout
6
3 300 pF
C4
C1
50 Ω
Spectrum Analyzer
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
LO
input
C2
PS bias
GND
RF
input
VCC
C1
COMPONENT LIST
No.
Value
C1, C2
1 000 pF
C3 to C5
3 300 pF
C3
C4
IF
output
Notes 1. 35 × 42 × 0.4 mm double sided copper clad polyimide board.
2. Back side: GND pattern
3. Solder plated on pattern
4. °{: Through holes
APPLICATION
This IC is guaranteed on the test circuit constructed with 50 Ω equipment and transmission line.
This IC, however, does not have 50 Ω input/output impedance, but electrical characteristics such as conversion
gain and intermodulation distortion are described herein on these conditions without impedance matching. So, you
should understand that conversion gain and intermodulation distortion at input level will vary when you improve VS of
RF input with external circuit (50 Ω termination or impedance matching).
External circuits of the IC can be referred to following application notes.
• To RF and IF port: µPC2757, µPC2758, µPC8112 application note (Document No. P11997E)
Data Sheet P10716EJ4V0DS00
7
µPC2757T, µPC2758T
TYPICAL CHARACTERISTICS (TA = +25 °C)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
CIRCUIT CURRENT vs. TEMPERATURE
20
20
µ PC2758T
15
10
µ PC2757T
5
0
1
2
3
4
5
15
µ PC2758T
10
–20
0
+20
+40
+60
+80 +100
Supply Voltage VCC (V)
Operating Ambient Temperature TA (°C)
CONVERSION GAIN AND NOISE FIGURE vs.
RF INPUT FREQUENCY
CONVERSION GAIN vs. IF OUTPUT FREQUENCY
20
µ PC2758T
15
µ PC2757T
10
CG
20
µ PC2758T
15
µ PC2757T
VCC = VPS =3.0 V
PRFin = –55 dBm
µ PC2757T
10 PLOin = –10 dBm SSBNF
µ PC2758T
fIFout = 100 MHz
(LOW-Side LO)
5
0.5
1.0
1.5
2.0
2.5
3.0
Conversion Gain CG (dB)
30
25
20
µ PC2758T
15
µ PC2757T
10
5
400
600
800
1 000 1 200
CONVERSION GAIN vs. LOCAL INPUT LEVEL
25
Conversion Gain CG (dB)
µ PC2758T
20
µ PC2757T
15
10
5
VCC = VPS = 3.0 V
fRFin = 900 MHz
fLOin = 800 MHz
PRFin = –40 dBm
0
–5
–50
200
IF Output Frequency fIFout (MHz)
RF Input Frequency fRFin (GHz)
CONVERSION GAIN vs. LOCAL INPUT LEVEL
Conversion Gain CG (dB)
VCC = VPS = 3.0 V
PRFin = –55 dBm
PLOin = –10 dBm
fRFin = 1.5 GHz
0
1.0
25
–40
–30
–20
–10
0
+10
LO input Level PLoin (dBm)
8
µ PC2757T
5
0
–40
6
25
Single Sideband
Noise Figure SSBNF (dB)
Conversion Gain CG (dB)
no signals
Vcc = VPS = 3.0 V
Circuit Current lCC (mA)
Circuit Current lCC (mA)
no signals
VPS = VCC
Data Sheet P10716EJ4V0DS00
20
µ PC2758T
15
µ PC2757T
10
5
VCC = VPS =3.0 V
fRFin = 2.0 GHz
fLOin = 1.9 GHz
PRFin = –40 dBm
0
–5
–50
–40
–30
–20
–10
LO input Level PLoin (dBm)
0
+10
µ PC2757T IM3 AND IF OUTPUT LEVEL
vs. RF INPUT LEVEL
20
10
0
–10
fRFin1 = 900 MHz
fRFin2 = 905 MHz
fLOin = 800 MHz
PLOin = –10 dBm
VCC = VPS = 3.0 V
–20
Pout
–30
IM3
–40
–50
–60
–70
–80
–60
–40
–20
0
IF Output Level PIFout (dBm)
Third Order Intermodulation Distortion IM3 (dBm)
IF Output Level PIFout (dBm)
Third Order Intermodulation Distortion IM3 (dBm)
µPC2757T, µPC2758T
µ PC2758T IM3 AND IF OUTPUT LEVEL
vs. RF INPUT LEVEL
20
10
0
–10
–20
–40
–50
–60
–70
–80
–10
fRFin1 = 2.0 GHz
fRFin2 = 2.005 GHz
fLOin = 1.9 GHz
PLOin = –10 dBm
VCC = VPS = 3.0 V
–20
Pout
–30
IM3
–40
–50
–60
–70
–80
–60
–40
–20
0
IF Output Level PIFout (dBm)
Third Order Intermodulation Distortion IM3 (dBm)
IF Output Level PIFout (dBm)
Third Order Intermodulation Distortion IM3 (dBm)
0
–60
–40
–20
0
RF Input Level PRFin (dBm)
µ PC2757T IM3 AND IF OUTPUT LEVEL
vs. RF INPUT LEVEL
10
IM3
Pout
–30
RF Input Level PRFin (dBm)
20
fRFin1 = 900 MHz
fRFin2 = 905 MHz
fLOin = 800 MHz
PLOin = –10 dBm
VCC = VPS = 3.0 V
µ PC2758T IM3 AND IF OUTPUT LEVEL
vs. RF INPUT LEVEL
20
10
0
–10
fRFin1 = 2.0 GHz
fRFin2 = 2.005 GHz
fLOin = 1.9 GHz
PLOin = –10 dBm
VCC = VPS = 3.0 V
–20
Pout
–30
IM3
–40
–50
–60
–70
–80
RF Input Level PRFin (dBm)
Data Sheet P10716EJ4V0DS00
–60
–40
–20
0
RF Input Level PRFin (dBm)
9
µPC2757T, µPC2758T
µ PC2758T LO LEAKAGE AT IF PIN
vs. LOCAL INPUT FREQUENCY
0
0
–10
–10
LO Leakage at IF Pin (dBm)
LO Leakage at IF Pin (dBm)
µ PC2757T LO LEAKAGE AT IF PIN
vs. LOCAL INPUT FREQUENCY
–20
–30
–40
–50
–60
PLOin = –10 dBm
VCC = VPS = 3.0 V
0
0.5
1.0
1.5
2.0
2.5
–40
–50
0
0.5
1.0
1.5
2.0
2.5
LO Input Frequency fLOin (GHz)
µ PC2757T LO LEAKAGE AT RF PIN
vs. LOCAL INPUT FREQUENCY
µ PC2758T LO LEAKAGE AT RF PIN
vs. LOCAL INPUT FREQUENCY
3.0
0
–10
–20
–30
–40
–50
PLOin = –10 dBm
VCC = VPS = 3.0 V
0
0.5
1.0
1.5
2.0
2.5
3.0
–10
–20
–30
–40
–50
–60
LO Input Frequency fLOin (GHz)
10
PLOin = –10 dBm
VCC = VPS = 3.0 V
LO Input Frequency fLOin (GHz)
LO Leakage at RF Pin (dBm)
LO Leakage at RF Pin (dBm)
–30
–60
3.0
0
–60
–20
Data Sheet P10716EJ4V0DS00
PLOin = –10 dBm
VCC = VPS = 3.0 V
0
0.5
1.0
1.5
2.0
2.5
LO Input Frequency fLOin (GHz)
3.0
µPC2757T, µPC2758T
S-PARAMETERS
– µPC2757T –
1
1
2
2
RF port
VCC=VPS=3.0V
1:500MHz 64.273 Ω−j250.85 Ω
2:900MHz 40.93 Ω−j141.55 Ω
3:1500MHz 31.09 Ω−j82.902 Ω
4:1900MHz 27.545 Ω−j62.115 Ω
5:2500MHz 26.459 Ω−j41.922 Ω
5
START
STOP
RF port
VCC=3.0V VPS=GND
1:500MHz 109.98 Ω−j363.47 Ω
2:900MHz 79.687 Ω−j214.84 Ω
3:1500MHz 60.195 Ω−j141.38 Ω
4:1900MHz 50.621 Ω−j114.52 Ω
5:2500MHz 42.488 Ω−j87.531 Ω
3
4
0.050000000 GHz
3.000000000 GHz
5
START
STOP
4
3
0.050000000 GHz
3.000000000 GHz
1
1
2
2
5
LO port
VCC=VPS=3.0V
1:500MHz 99.852 Ω−j220.24 Ω
2:900MHz 73.133 Ω−j139.53 Ω
3:1500MHz 52.672 Ω−j91.57 Ω
4:1900MHz 48.867 Ω−j74.281 Ω
5:2500MHz 40.842 Ω−j55.199 Ω
START
STOP
4
4 3
3
0.050000000 GHz
3.000000000 GHz
5
LO port
VCC=3.0V VPS=GND
1:500MHz 128.02 Ω−j354.03 Ω
2:900MHz 88.133 Ω−j222.33 Ω
3:1500MHz 62.516 Ω−j140.97 Ω
4:1900MHz 58.312 Ω−j117.96 Ω
5:2500MHz 45.59 Ω−j93.238 Ω
START
STOP
0.050000000 GHz
3.000000000 GHz
1
2
1
2
IF port
VCC=VPS=3.0V
1:130MHz 24.197 Ω−j7.668 Ω
2:250MHz 28.207 Ω−j13.525 Ω
START
STOP
0.050000000 GHz
0.300000000 GHz
IF port
VCC=3.0V VPS=GND
1:130MHz 168.88 Ω−j1.2039k Ω
2:250MHz 120.56 Ω−j652.25 Ω
Data Sheet P10716EJ4V0DS00
START
STOP
0.050000000 GHz
0.300000000 GHz
11
µPC2757T, µPC2758T
– µPC2758T –
1
1
2
5
RF port
VCC=VPS=3.0V
1:500MHz 59.633 Ω−j235.09 Ω
2:900MHz 37.609 Ω−j131.38 Ω
3:1500MHz 29.121 Ω−j76.48 Ω
4:1900MHz 26.992 Ω−j56.742 Ω
5:2500MHz 26.697 Ω−j37.975 Ω
2
4
START
STOP
RF port
VCC=3.0V VPS=GND
1:500MHz 105.94 Ω−j355.98 Ω
2:900MHz 79.336 Ω−j214.39 Ω
3:1500MHz 61.398 Ω−j139.99 Ω
4:1900MHz 51.539 Ω−j113.45 Ω
5:2500MHz 42.875 Ω−j87.09 Ω
3
0.050000000 GHz
3.000000000 GHz
5
START
STOP
4
3
0.050000000 GHz
3.000000000 GHz
1
1
5
LO port
VCC=VPS=3.0V
1:500MHz 69.883 Ω−j177.5 Ω
2:900MHz 59.047 Ω−j102.83 Ω
3:1500MHz 49.656 Ω−j67.445 Ω
4:1900MHz 46.871 Ω−j53.65 Ω
5:2500MHz 42.143 Ω−j40.105 Ω
START
STOP
2
4
3
2
0.050000000 GHz
3.000000000 GHz
5
LO port
VCC=3.0V VPS=GND
1:500MHz 102.48 Ω−j330.11 Ω
2:900MHz 79.703 Ω−j199.25 Ω
3:1500MHz 60.961 Ω−j128.63 Ω
4:1900MHz 59.211 Ω−j107.32 Ω
5:2500MHz 48.105 Ω−j86.215 Ω
START
STOP
4 3
0.050000000 GHz
3.000000000 GHz
1
2
1
2
IF port
VCC=VPS=3.0V
1:130MHz 20.784 Ω−j10.842 Ω
2:250MHz 27.586 Ω−j18.538 Ω
12
START
STOP
0.050000000 GHz
0.300000000 GHz
IF port
VCC=3.0V VPS=GND
1:130MHz 182.06 Ω−j1.1831k Ω
2:250MHz 117.16 Ω−j631.63 Ω
Data Sheet P10716EJ4V0DS00
START
STOP
0.050000000 GHz
0.300000000 GHz
µPC2757T, µPC2758T
SYSTEM APPLICATION EXAMPLE
ANALOG CELLULAR TELEPHONE
µPC2757T
FM
Low noise Tr
DEMO.
RX
VCO
÷N
PLL
SW
PLL
TX
MOD.
PA
DIGITAL CELLULAR TELEPHONE
µPC2758T
Low noise Tr
DEMO.
RX
VCO
÷N
I
Q
PLL
SW
PLL
0˚
TX
I
φ
PA
90˚
Q
These examples show only IC’s location on the system use schematically, do not present or recommend the
actual application circuit in detail.
Data Sheet P10716EJ4V0DS00
13
µPC2757T, µPC2758T
PACKAGE DIMENSIONS
6 PIN MINIMOLD (Unit: mm)
0.3
3
+0.2
–0.1
2
0.13 ±0.1
0 to 0.1
1.5
2.8
+0.2
–0.3
1
+0.1
–0.05
6
5
4
0.95
0.95
1.9
2.9 ±0.2
14
Data Sheet P10716EJ4V0DS00
0.8
1.1 +0.2
–0.1
µPC2757T, µPC2758T
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electrostatic sensitive devices.
(2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation).
(3) Keep the track length of the ground pins as short as possible.
(4) Connect a bypass capacitor (example: 1 000 pF) to the VCC pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition
Symbol
Infrared Reflow
Package peak temperature: 235 °C or below
Time: 30 seconds or less (at 210 °C)
Note
Count: 3, Exposure limit: None
IR35-00-3
VPS
Package peak temperature: 215 °C or below
Time: 40 seconds or less (at 200 °C)
Note
Count: 3, Exposure limit: None
VP15-00-3
Wave Soldering
Soldering bath temperature: 260 °C or below
Time: 10 seconds or less
Note
Count: 1, Exposure limit: None
WS60-00-1
Partial Heating
Pin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Note
Exposure limit: None
–
Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P10716EJ4V0DS00
15
µPC2757T, µPC2758T
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8