DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µPC2757TB, µPC2758TB
SILICON MMIC 1st FREQUENCY DOWN-CONVERTER
FOR CELLULAR/CORDLESS TELEPHONE
DESCRIPTION
The µPC2757TB and µPC2758TB are silicon monolithic integrated circuit designed as 1st frequency downconverter for cellular/cordless telephone receiver stage. The ICs consist of mixer and local amplifier. The
µPC2757TB features low current consumption and the µPC2758TB features improved intermodulation. From these
two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller
package than conventional T suffix ICs contribute to reduce your system size.
The µPC2757TB and µPC2758TB are manufactured using Renesas 20 GHz fT NESAT™III silicon bipolar process.
This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from
external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Wideband operation
: fRFin = 0.1 to 2.0 GHz, fIFout = 20 to 300 MHz
• High-density surface mounting
: 6-pin super minimold package
• Low current consumption
: ICC = 5.6 mA TYP. @ µPC2757TB
ICC = 11 mA TYP. @ µPC2758TB
• Supply voltage
: VCC = 2.7 to 3.3 V
• Minimized carrier leakage
: Due to double balanced mixer
• Equable output impedance
: Single-end push-pull IF amplifier
• Built-in power save function
APPLICATIONS
• Cellular/cordless telephone up to 2.0 GHz MAX. (example: GSM, PDC800M, PDC1.5G and so on): µPC2758TB
• Cellular/cordless telephone up to 2.0 GHz MAX. (example: CT1, CT2 and so on): µPC2757TB
ORDERING INFORMATION
Part Number
µPC2757TB-E3
µPC2758TB-E3
Package
6-pin
super
minimold
Markings
Supplying Form
C1X
Embossed tape 8 mm wide.
Pin 1, 2, 3 face the tape perforation side.
Qty 3kpcs/reel.
C1Y
Product Type
Low current consumption
High OIP3
Remark To order evaluation samples, please contact your nearby sales office (Part number for sample order:
µPC2757TB-A, µPC2758TB-A).
Caution Electro-static sensitive devices
Document No. P12771EJ3V0DS00 (3rd edition)
Date Published November 2000 N CP(K)
The mark
shows major revised points.
µPC2757TB, µPC2758TB
CONTENTS
1.
PIN CONNECTIONS............................................................................................................................................. 3
2.
PRODUCT LINE-UP ............................................................................................................................................. 3
3.
INTERNAL BLOCK DIAGRAM ........................................................................................................................... 4
4.
SYSTEM APPLICATION EXAMPLE................................................................................................................... 4
5.
PIN EXPLANATION ............................................................................................................................................. 5
6.
ABSOLUTE MAXIMUM RATINGS...................................................................................................................... 6
7.
RECOMMENDED OPERATING RANGE ............................................................................................................ 6
8.
ELECTRICAL CHARACTERISTICS .................................................................................................................... 6
9.
STANDARD CHARACTERISTICS FOR REFERENCE ..................................................................................... 7
10. TEST CIRCUIT ..................................................................................................................................................... 8
11. ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD ................................. 8
12. TYPICAL CHARACTERISTICS............................................................................................................................ 9
12.1 µPC2757TB.................................................................................................................................................. 9
12.2 µPC2758TB................................................................................................................................................ 11
13. S-PARAMETERS ................................................................................................................................................ 13
13.1 µPC2757TB................................................................................................................................................ 13
13.2 µPC2758TB................................................................................................................................................ 14
14. PACKAGE DIMENSIONS .................................................................................................................................... 15
15. NOTE ON CORRECT USE ................................................................................................................................ 16
16. RECOMMENDED SOLDERING CONDITIONS .................................................................................................. 16
2
Data Sheet P12771EJ3V0DS00
µPC2757TB, µPC2758TB
1. PIN CONNECTIONS
µPC2757TB, µPC2758TB in common
C1X
(Top View)
3
2
1
(Bottom View)
4
4
3
5
5
2
6
6
1
Pin No.
Pin Name
1
RFinput
2
GND
3
LOinput
4
PS
5
VCC
6
IFoutput
Example marking is for µPC2757TB
2. PRODUCT LINE-UP (TA = +25°C, VCC = VPS = 3.0 V, ZS = ZL = 50 Ω)
Items
Part No.
No RF
ICC
(mA)
900 MHz 1.5 GHz 1.9 GHz 900 MHz
SSB · NF SSB · NF SSB · NF
CG
(dB)
(dB)
(dB)
(dB)
1.5 GHz
CG
(dB)
1.9 GHz
CG
(dB)
900 MHz
IIP3
(dBm)
1.5 GHz
IIP3
(dBm)
1.9 GHz
IIP3
(dBm)
µPC2757T
µPC2757TB
5.6
10
10
13
15
15
13
−14
−14
−12
11
9
10
13
19
18
17
−13
−12
−11
8.5
9
11
11
15
13
13
−10
−9
−7
900 MHz
PO(sat)
(dBm)
1.5 GHz
PO(sat)
(dBm)
1.9 GHz
PO(sat)
(dBm)
900 MHz
RFLO
(dB)
1.5 GHz
RFLO
(dB)
1.9 GHz
RFLO
(dB)
−3
−
−8
−
−
−
µPC2758T
µPC2758TB
µPC8112T
µPC8112TB
Items
Part No.
µPC2757T
µPC2757TB
µPC8112T
µPC8112TB
Remark
Packages
6-pin minimold
6-pin super minimold
Emitter follower
µPC2758T
µPC2758TB
IF Output
Configuration
+1
−
−4
−
−
6-pin minimold
−
6-pin super minimold
−2.5
−3
−3
−80
−57
−55
6-pin minimold
Open collector
6-pin super minimold
Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Cautions 1. The µPC2757 and µPC2758’s IIP3 are calculated with ∆IM3 = 3 which is the same IM3
inclination as µPC8112. On the other hand, OIP3 of Standard characteristics in page 7 is
cross point IP.
2. This document is to be specified for µPC2757TB, µPC2758TB.
The other part number
mentioned in this document should be referred to the data sheet of each part number.
Data Sheet P12771EJ3V0DS00
3
µPC2757TB, µPC2758TB
3. INTERNAL BLOCK DIAGRAM (µPC2757TB, µPC2758TB in common)
RF
input
IF
output
POWER
SAVE
LO
input
VCC
GND
4. SYSTEM APPLICATION EXAMPLE
DIGITAL CELLULAR TELEPHONE
µ PC2758TB
Low noise Tr.
DEMOD.
RX
VCO
÷N
I
Q
PLL
SW
PLL
0˚
TX
φ
PA
Driver
4
I
Data Sheet P12771EJ3V0DS00
90˚
Q
µPC2757TB, µPC2758TB
5. PIN EXPLANATION (Both µPC2757TB, 2758TB)
Pin
No.
Pin
Name
Applied
Voltage (V)
Pin Voltage
Note
(V)
1
RFinput
−
1.2
Function and Application
This pin is RF input for mixer
designed as double balance type.
This circuit contributes to suppress
spurious signal with minimum LO
and bias power consumption.
Also this symmetrical circuit can
keep specified performance insensitive to process-condition
distribution.
2
GND
GND
–
This pin is ground of IC.
Must be connected to the system
ground with minimum inductance.
Ground pattern on the board should
be formed as wide as possible.
(Track length should be kept as
short as possible.)
3
LOinput
–
1.3
This pin is LO input for local buffer
designed as differential amplifier.
Recommendable input level is –15
to 0 dBm. Also this symmetrical
circuit can keep specified
performance insensitive to processcondition distribution.
4
PS
VCC or GND
–
Internal Equivalent Circuit
VCC
To IF
Amp.
From
LO
1
−
VCC
Mixer
3
This pin is for power-save function.
This pin can control ON/OFF
operation with bias as follows;
Bias: V
VPS
VCC
4
Operation
≥ 2.5
ON
0 to 0.5
OFF
Rise time/fall time using this pin are
approximately 10 µs.
5
VCC
2.7 to 3.3
–
Supply voltage 3.0 ±0.3 V for
operation. Must be connected
bypass capacitor. (example: 1 000
pF) to minimize ground impedance.
6
IFoutput
–
1.7
This pin is output from IF buffer
amplifier designed as single-ended
push-pull type. This pin is assigned
for emitter follower output with lowimpedance. In the case of
connecting to high-impedance
stage, please attach external
matching circuit.
−
VCC
6
Note Each pin voltage is measured at VCC = 3.0 V
Data Sheet P12771EJ3V0DS00
5
µPC2757TB, µPC2758TB
6. ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C
5.5
V
Power Dissipation of Package Allowance
PD
Mounted on 50 × 50 × 1.6 mm
double sided copper clad epoxy
glass board at TA = +85°C
270
mW
Operating Ambient Temperature
TA
–40 to +85
°C
Storage Temperature
Tstg
–55 to +150
°C
PS Pin Voltage
VPS
5.5
V
TA = +25°C
7. RECOMMENDED OPERATING RANGE
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Supply Voltage
VCC
2.7
3.0
3.3
V
Operating Ambient Temperature
TA
–40
+25
+85
°C
PLOin
–15
–10
0
dBm
LO Input Power
8. ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = VPS = 3.0 V, PLOin = –10 dBm,
ZS = ZL = 50 Ω)
µPC2757TB
Parameter
6
Symbol
µPC2758TB
Conditions
Unit
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
Circuit Current
ICC
No input signal
3.7
5.6
7.7
6.6
11
14.8
mA
RF Input Frequency
fRFin
CG ≥ (CG1 –3 dB)
fIFout = 130 MHz constant
0.1
−
2.0
0.1
−
2.0
GHz
IF Output Frequency
fIFout
CG ≥ (CG1 –3 dB)
fRFin = 0.8 GHz constant
20
−
300
20
−
300
MHz
Conversion Gain 1
CG1
fRFin = 0.8 GHz, fIFout = 130 MHz
PRFin = –40 dBm, Upper local
12
15
18
16
19
22
dB
Conversion Gain 2
CG2
fRFin = 2.0 GHz, fIFout = 250 MHz
PRFin = –40 dBm, Lower local
10
13
16
14
17
20
dB
SSB Noise Figure 1
SSB • NF1 fRFin = 0.8 GHz, fIFout = 130 MHz,
SSB mode, Upper local
−
10
13
−
9
12
dB
SSB Noise Figure 2
SSB • NF2 fRFin = 2.0 GHz, fIFout = 250 MHz,
SSB mode, Lower local
−
13
16
−
13
15
dB
Saturated Output
Power 1
PO(sat) 1
fRFin = 0.8 GHz, fIFout = 130 MHz
PRFin = –10 dBm, Upper local
–11
–3
−
–7
+1
−
dBm
Saturated Output
Power 2
PO(sat) 2
fRFin = 2.0 GHz, fIFout = 250 MHz
PRFin = –10 dBm, Lower local
–11
–8
−
–7
–4
−
dBm
Data Sheet P12771EJ3V0DS00
µPC2757TB, µPC2758TB
9. STANDARD CHARACTERISTICS FOR REFERENCE
(Unless otherwise specified: TA = +25°C, VCC = VPS = 3.0 V, PLOin = –10 dBm, ZS = ZL = 50 Ω)
Reference Value
Parameter
Symbol
Conditions
3rd Order Distortion Output
Intercept Point
OIP3
LO Leakage at RF pin
LO Leakage at IF pin
Circuit Current at Power Save
Mode
Unit
µPC2757TB
µPC2758TB
fRFin = 0.8 to 2.0 GHz, fIFout = 0.1 GHz,
Cross point IP
+5
+11
dBm
LOrf
fLOin = 0.8 to 2.0 GHz
–35
–30
dBm
LOif
fLOin = 0.8 to 2.0 GHz
–23
–15
dBm
VPS = 0.5 V
0.1
0.1
µA
ICC(PS)
Data Sheet P12771EJ3V0DS00
7
µPC2757TB, µPC2758TB
10. TEST CIRCUIT
µPC2757TB, µPC2758TB
(Top View)
Signal Generator
POWER
SAVE
1 000 pF
50 Ω
3
LOinput
PS
4
2
GND
VCC
3 300 pF
5
3V
C3
1
RFinput IFoutput
C2
Signal Generator
1 000 pF
50 Ω
C1
6
3 300 pF
C4
50 Ω
Spectrum Analyzer
11. ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
C3
LO
input
PS bias
C2
PS
GND
VCC
C4
→
Voltage supply
RF
input
C5
C1
Component List
Notes 1. 35 × 42 × 0.4 mm double sided copper clad polyimide board.
Value
2. Back side: GND pattern
C1, C2
1 000 pF
3. Solder plated on pattern
C3 to C5
3 300 pF
4. °{: Through holes
No.
IF
output
Application explanation
This IC is guaranteed on the test circuit constructed with 50 Ω equipment and transmission line.
This IC, however, does not have 50 Ω input/output impedance, but electrical characteristics such as conversion
gain and intermodulation distortion are described herein on these conditions without impedance matching. So, you
should understand that conversion gain and intermodulation distortion at input level will vary when you improve VS of
RF input with external circuit (50 Ω termination or impedance matching.)
8
Data Sheet P12771EJ3V0DS00
µPC2757TB, µPC2758TB
12. TYPICAL CHARACTERISTICS (TA = +25°°C, on Measurement Circuit)
12.1 µPC2757TB
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
CONVERSION GAIN vs. RF INPUT FREQUENCY
20
9
Conversion Gain CG (dB)
Circuit Current ICC (mA)
No input signal
8 VCC = VPS
7
6
5
4
3
2
1
0
0
1
2
3
4
Supply Voltage VCC (V)
5
6
SSB NOISE FIGURE vs. RF INPUT FREQUENCY
12
11
10
9
VCC = VPS = 3.0 V
PRFin = –40 dBm
PLOin = –10 dBm
fIFout = 130 MHz
1.6
1.8
2.0
2.2
2.4
RF Input Frequency fRFin (GHz)
Conversion Gain CG (dB)
SSB Noise Figure SSB • NF (dB)
13
6
1.4
12
10
VCC = VPS = 3.0 V
PRFin = –40 dBm
8 PLOin = –10 dBm
fIFout = 130 MHz
6
0
0.5
1.0
1.5
2.0
RF Input Frequency fRFin (GHz)
16
14
12
10
8
20
20
5
0
–5
–50
VCC = VPS = 3.0 V
fRFin = 900 MHz
fLOin = 800 MHz
PRFin = –40 dBm
–40
–30
–20
–10
0
LO Input Power PLOin (dBm)
10
Conversion Gain CG (dB)
25
10
0
100 200 300 400 500 600
IF Output Frequency fIFout (MHz)
700
CONVERSION GAIN vs. LO INPUT POWER
25
15
2.5
VCC = VPS = 3.0 V
PRFin = –40 dBm
PLOin = –10 dBm
fRFin = 800 MHz
18
6
2.6
CONVERSION GAIN vs. LO INPUT POWER
Conversion Gain CG (dB)
14
20
14
7
16
CONVERSION GAIN vs. IF OUTPUT FREQUENCY
15
8
18
15
10
5
0
–5
–50
Data Sheet P12771EJ3V0DS00
VCC = VPS = 3.0 V
fRFin = 2.0 GHz
fLOin = 1.9 GHz
PRFin = –40 dBm
–40
–30
–20
–10
0
LO Input Power PLOin (dBm)
10
9
IF OUTPUT POWER OF EACH TONE,
IM3 vs. RF INPUT POWER
20
fRFin = 800 MHz
10 fLOin = 930 MHz
PLOin = –10 dBm
0
VCC = VPS = 3.0 V
–10
–20
Pout
–30
–40
IM3
–50
–60
–70
–50 –45 –40 –35 –30 –25 –20 –15 –10 –5
RF Input Power PRFin (dBm)
IF Output Power of Each Tone PIFout(each) (dBm)
3rd Order Intemodulation Distortion IM3 (dBm)
IF Output Power of Each Tone PIFout(each) (dBm)
3rd Order Intemodulation Distortion IM3 (dBm)
µPC2757TB, µPC2758TB
IF OUTPUT POWER OF EACH TONE,
IM3 vs. RF INPUT POWER
20
fRFin = 2 GHz
10 fLOin = 1.75 GHz
PLOin = –10 dBm
0
VCC = VPS = 3.0 V
–10
–20
Pout
–30
–40
IM3
–50
–60
–70
–50 –45 –40 –35 –30 –25 –20 –15 –10 –5
RF Input Power PRFin (dBm)
LO LEAKAGE AT RF PIN vs.
LO INPUT FREQUENCY
LO LEAKAGE AT IF PIN vs.
LO INPUT FREQUENCY
–10
PLOin = –10 dBm
–15 VCC = VPS = 3.0 V
–20
LO Leakage at IF Pin LOif (dBm)
LO Leakage at RF Pin LOrf (dBm)
–10
–25
–30
–35
–40
–45
–50
–55
–60
0
0.5
1
1.5
2
LO Input Frequency fLOin (GHz)
2.5
PLOin = –10 dBm
V
–15 CC = VPS = 3.0 V
–20
–25
–30
–35
–40
–45
0
Remark The graphs indicate nominal characteristics.
10
Data Sheet P12771EJ3V0DS00
0.5
1
1.5
2
LO Input Frequency fLOin (GHz)
2.5
µPC2757TB, µPC2758TB
12.2 µPC2758TB
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
No input signal
VCC = VPS
15
10
5
0
0
1
2
3
4
Supply Voltage VCC (V)
5
16
14
12
0
10
18
17
16
15
14
13
VCC = VPS = 3.0 V
PRFin = –40 dBm
PLOin = –10 dBm
fRFin = 800 MHz
12
11
0.5
1.0
1.5
2.0
2.5
RF Input Frequency fRFin (GHz)
10
3.0
CONVERSION GAIN vs. LO INPUT POWER
20
20
10
5
VCC = VPS = 3.0 V
fRFin = 800 MHz
fLOin = 930 MHz
PRFin = –40 dBm
–40
–30
–20
–10
0
LO Input Power PLOin (dBm)
10
Conversion Gain CG (dB)
25
15
0
100
200
300
400
500
IF Output Frequency fIFout (MHz)
600
CONVERSION GAIN vs. LO INPUT POWER
25
–5
–50
3.0
19
15
0
0.5
1.0
1.5
2.0
2.5
RF Input Frequency fRFin (GHz)
CONVERSION GAIN vs. IF OUTPUT FREQUENCY
Conversion Gain CG (dB)
SSB Noise Figure SSB • NF (dB)
18
20
VCC = VPS = 3.0 V
PRFin = –40 dBm
PLOin = –10 dBm
fIFout = 130 MHz
5
0.0
Conversion Gain CG (dB)
24 VCC = VPS = 3.0 V
PRFin = –40 dBm
22 PLOin = –10 dBm
fIFout = 130 MHz
20
10
6
SSB NOISE FIGURE vs. RF INPUT FREQUENCY
20
CONVERSION GAIN vs. RF INPUT FREQUENCY
Conversion Gain CG (dB)
Circuit Current ICC (mA)
20
15
10
5
0
–5
–50
Data Sheet P12771EJ3V0DS00
VCC = VPS = 3.0 V
fRFin = 2.0 GHz
fLOin = 1.9 GHz
PRFin = –40 dBm
–40
–30
–20
–10
0
LO Input Power PLOin (dBm)
10
11
IF OUTPUT POWER OF EACH TONE,
IM3 vs. RF INPUT POWER
20
10
0
–10
–20
–30
–40
–50
–60
–70
–80
–50
fRF1 = 800 MHz
fRF2 = 805 MHz
fLO = 900 MHz
PLOin = –10 dBm
VCC = VPS = 3.0 V
–40
–30
–20
–10
0
RF Input Power PRFin (dBm)
10
IF Output Power of Each Tone PIFout(each) (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
IF Output Power of Each Tone PIFout(each) (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
µPC2757TB, µPC2758TB
IF OUTPUT POWER OF EACH TONE,
IM3 vs. RF INPUT POWER
20
10
0
–10
–20
–30
–40
–50
–60
–70
–80
–50
LO LEAKAGE AT RF PIN vs.
LO INPUT FREQUENCY
–10
–20
–30
–40
–50
PLOin = –10 dBm
VCC = VPS = 3.0 V
0
0.5
1.0
1.5
2.0
2.5
LO Input Frequency fLOin (GHz)
3.0
LO Leakage at IF Pin LOif (dBm)
LO Leakage at RF Pin LOrf (dBm)
10
0
–10
–20
–30
–40
–50
–60
PLOin = –10 dBm
VCC = VPS = 3.0 V
0
Remark The graphs indicate nominal characteristics.
12
–40
–30
–20
–10
0
RF Input Power PRFin (dBm)
LO LEAKAGE AT IF PIN vs.
LO INPUT FREQUENCY
0
–60
fRF1 = 2.0 GHz
fRF2 = 2.005 GHz
fLO = 1.9 GHz
PLOin = –10 dBm
VCC = VPS = 3.0 V
Data Sheet P12771EJ3V0DS00
0.5
1.0
1.5
2.0
2.5
LO Input Frequency fLOin (GHz)
3.0
µPC2757TB, µPC2758TB
13. S-PARAMETERS
13.1 µPC2757TB
Calibrated on pin of DUT
S11
Z
REF 1.0 Units
1
200.0 mUnits/
56.422 Ω –275.59 Ω
hp
MARKER 1
500.0 MHz
S11
Z
REF 1.0 Units
1
200.0 mUnits/
104.03 Ω –413.42 Ω
hp
MARKER 1
500.0 MHz
1
1
2
2
5
RF PORT
VCC = VPS = 3.0V
1:500 MHz 56.422 Ω -j275.59 Ω
2:900 MHz 38.68 Ω -j152.71 Ω
3:1 500 MHz 31.699 Ω -j88.102 Ω
4:1 900 MHz 29.209 Ω -j65.926 Ω
5:2 500 MHz 29.209 Ω -j44.758 Ω
4
5
3
RF PORT
VCC = 3.0V VPS = GND
1:500 MHz 104.03 Ω -j413.42 Ω
2:900 MHz 74.82 Ω -j243.06 Ω
3:1 500 MHz 59.266 Ω -j154.98 Ω
4:1 900 MHz 51.227 Ω -j124.55 Ω
5:2 500 MHz 43.996 Ω -j95.117 Ω
START 0.050000000 GHz
STOP 3.000000000 GHz
S11
Z
REF 1.0 Units
1
200.0 mUnits/
90.969 Ω –243.41 Ω
hp
MARKER 1
500.0 MHz
4
3
START 0.050000000 GHz
STOP 3.000000000 GHz
S11
Z
REF 1.0 Units
1
200.0 mUnits/
114.16 Ω –400.03 Ω
hp
MARKER 1
500.0 MHz
1
1
2
2
5
LO PORT
VCC = VPS = 3.0V
1:500 MHz 90.969 Ω -j243.41 Ω
2:900 MHz 67.828 Ω -j150.32 Ω
3:1 500 MHz 51.488 Ω -j97.273 Ω
4:1 900 MHz 44.621 Ω -j77.352 Ω
5:2 500 MHz 39.627 Ω -j56.738 Ω
4 3
START 0.050000000 GHz
STOP 3.000000000 GHz
S22
Z
REF 1.0 Units
1
200.0 mUnits/
19.146 Ω 7.2041 Ω
hp
MARKER 1
130.0 MHz
5
LO PORT
VCC = 3.0V VPS = GND
1:500 MHz 114.16 Ω -j400.03 Ω
2:900 MHz 75.133 Ω -j242.73 Ω
3:1 500 MHz 53.516 Ω -j154.21 Ω
4:1 900 MHz 44.789 Ω -j124.74 Ω
5:2 500 MHz 37.004 Ω -j93.828 Ω
4
3
START 0.050000000 GHz
STOP 3.000000000 GHz
S22
Z
REF 1.0 Units
1
200.0 mUnits/
066.38 Ω –1.3174 kΩ
hp
MARKER 1
130.0 MHz
1
2
1
2
IF PORT
VCC = VPS = 3.0V
1:130 MHz 19.146 Ω -j7.2041 Ω
2:250 MHz 22.73 Ω -j12.909 Ω
START 0.050000000 GHz
STOP 3.000000000 GHz
IF PORT
VCC = 3.0V VPS = GND
1:130 MHz 66.38 Ω -j1.3174 kΩ
2:250 MHz 88.281 Ω -j725.41 Ω
Data Sheet P12771EJ3V0DS00
START 0.050000000 GHz
STOP 3.000000000 GHz
13
µPC2757TB, µPC2758TB
13.2 µPC2758TB
Calibrated on pin of DUT
S11
Z
REF 1.0 Units
1
200.0 mUnits/
63.312 Ω –261.34 Ω
hp
MARKER 1
500.0 MHz
S11
Z
REF 1.0 Units
1
200.0 mUnits/
107.13 Ω –395.56 Ω
hp
MARKER 1
500.0 MHz
1
1
2
5
RF PORT
VCC = VPS = 3.0V
1:500 MHz 63.312 Ω -j261.34 Ω
2:900 MHz 40.227 Ω -j142.36 Ω
3:1 500 MHz 32.441 Ω -j79.68 Ω
4:1 900 MHz 31.107 Ω -j58.273 Ω
5:2 500 MHz 30.871 Ω -j39.08 Ω
2
4
5
3
RF PORT
VCC = 3.0V VPS = GND
1:500 MHz 107.13 Ω -j395.56 Ω
2:900 MHz 78.711 Ω -j234.41 Ω
3:1 500 MHz 61.922 Ω -j148.82 Ω
4:1 900 MHz 52.629 Ω -j119.55 Ω
5:2 500 MHz 44.766 Ω -j90.578 Ω
START 0.050000000 GHz
STOP 3.000000000 GHz
Z
S11
REF 1.0 Units
1
200.0 mUnits/
73.398 Ω –188.13 Ω
hp
MARKER 1
500.0 MHz
4
3
START 0.050000000 GHz
STOP 3.000000000 GHz
Z
S11
REF 1.0 Units
1
200.0 mUnits/
100.31 Ω –374.75 Ω
hp
MARKER 1
500.0 MHz
1
1
5
2
4 3
2
5
LO PORT
VCC = VPS = 3.0V
1:500 MHz 73.398 Ω -j188.13 Ω
2:900 MHz 64.551 Ω -j112.66 Ω
3:1 500 MHz 53.133 Ω -j72.941 Ω
4:1 900 MHz 48.111 Ω -j57.307 Ω
5:2 500 MHz 44.541 Ω -j41.564 Ω
START 0.050000000 GHz
STOP 3.000000000 GHz
S22
Z
REF 1.0 Units
1
200.0 mUnits/
15.696 Ω 9.5011 Ω
hp
MARKER 1
130.0 MHz
LO PORT
VCC = 3.0V VPS = GND
1:500 MHz 100.31 Ω -j374.75 Ω
2:900 MHz 73.148 Ω -j223.07 Ω
3:1 500 MHz 57.719 Ω -j144.02 Ω
4:1 900 MHz 50.738 Ω -j119.52 Ω
5:2 500 MHz 41.836 Ω -j90.25 Ω
4
3
START 0.050000000 GHz
STOP 3.000000000 GHz
S22
Z
REF 1.0 Units
1
200.0 mUnits/
106.69 Ω –1.3425 kΩ
hp
MARKER 1
130.0 MHz
1
2
1
2
IF PORT
VCC = VPS = 3.0V
1:130 MHz 15.696 Ω -j9.5811 Ω
2:250 MHz 21.4 Ω -j16.331 Ω
14
START 0.050000000 GHz
STOP 3.000000000 GHz
IF PORT
VCC = 3.0V VPS = GND
1:130 MHz 106.69 Ω -j1.3425 kΩ
2:250 MHz 83.75 Ω -j711.47 Ω
Data Sheet P12771EJ3V0DS00
START 0.050000000 GHz
STOP 3.000000000 GHz
µPC2757TB, µPC2758TB
14. PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
Data Sheet P12771EJ3V0DS00
0.15+0.1
–0.05
0 to 0.1
0.7
0.1 MIN.
0.9±0.1
2.0±0.2
1.25±0.1
15
µPC2757TB, µPC2758TB
15. NOTE ON CORRECT USE
(1) Observe precautions for handling because of electrostatic sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
Keep the track length of the ground pins as short as possible.
(3) Connect a bypass capacitor (example: 1 000 pF) to the VCC pin.
(4) The DC cut capacitor must be attached to input pin.
16. RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
Soldering Method
Soldering Condition
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235°C or below
Time: 30 seconds or less (at 210°C)
Note
Count: 3, Exposure limit: None
IR35-00-3
VPS
Package peak temperature: 215°C or below
Time: 40 seconds or less (at 200°C)
Note
Count: 3, Exposure limit: None
VP15-00-3
Wave Soldering
Soldering bath temperature: 260°C or below
Time: 10 seconds or less
Note
Count: 1, Exposure limit: None
WS60-00-1
Partial Heating
Pin temperature: 300°C
Time: 3 seconds or less (per side of device)
Note
Exposure limit: None
–
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
16
Data Sheet P12771EJ3V0DS00
NOTICE
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
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California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does
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You should use the Renesas Electronics products described in this document within the range specified by California Eastern Laboratories, especially with
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