FJX597J FJX597J Capacitor Microphone Applications 3 • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 Marking: SCH 1. Drain 2. Source 3. Gate Si N-channel Junction FET Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VGDO Gate-Drain Voltage Parameter Ratings -20 Units V IG ID Gate Current 10 mA Drain Current 1 PD Power Dissipation mA 100 mW TJ TSTG Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVGDO Parameter Gate-Drain Breakdown Voltage Test Condition IG= -100uA Min. -20 Typ. Max. Units V -0.6 -1.5 V 350 µA VGS(off) Gate-Source Cut-off Voltage VDS=5V, ID=1µA IDSS Drain Current VDS=5V, VGS=0 150 lYFSl Forward Transfer Admittance VDS=5V, VGS=0, f=1MHz 0.4 CISS Input Capacitance VDS=5V, VGS=0, f=1MHz 3.5 pF CRSS Output Capacitance VDS=5V, VGS=0, f=1MHz 0.65 pF ©2002 Fairchild Semiconductor Corporation 1.2 ms Rev. B1, March 2002 Symbol GV Voltage Gain Parameter ∆GVV Reduced Voltage Characteristic Test Condition VIN=10mV, f=1KHz Min. VIN=10mV, f=1KHz VCC=4.5V → 1.5V ∆GVF Frequency Characteristic f=1KHz to 110Hz ZIN Input Resistance f=1KHz Output Resistance f=1KHz THD Total Harmonic Distortion VIN=30mV, f=1KHz VNO Output Noise Voltage VIN=0, A CURVE -1.2 -3.5 dB dB MΩ 700 1 Ω % -110 dB V CC =4.5V V CC =1.5V + 33u B V ©2002 Fairchild Semiconductor Corporation Units dB -1 RL=1k OSC Max. 25 ZO C in =15p Typ. -3 VTVM A THD 1k Rev. B1, March 2002 FJX597J Specified Test Circuit Ta=25°C unless otherwise noted FJX597J Typical Characteristics 500 1000 IDSS = 200µA 450 ID[µA], DRAIN CURRENT ID[µA], DRAIN CURRENT 400 350 300 250 VGS = 0 200 150 VGS = -0.1V 100 1 2 3 4 5 6 700 600 VGS = 0 500 400 VGS = -0.1V 300 VGS = -0.2V 7 8 9 VGS = -0.3V VGS = -0.4V 100 VGS = -0.4V VGS = -0.3V 0 0 800 200 VGS = -0.2V 50 IDSS = 500µA 900 VGS = -0.5V 10 0 1 2 Figure 1. ID-VDS lFSl [ms], FORWARD TRANSFER ADMITTANCE VDS = 5V ID[mA], DRAIN CURRENT 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -1.2 -1.0 -0.8 6 7 8 9 10 -0.6 -0.4 -0.2 0.0 VDS = 5V VGS = 0 f=1kHz 1 0.1 0.1 1 IDSS[mA], DRAIN CURRENT Figure 4. yFS-IDSS Figure 3. ID-VGS -10 100 VDS = 5V ID = 1µA -1 CISS[pF], INPUT CAPACITANCE VGS(off)[V], GATE-SOURCE CUT-OFF VOLTAGE 5 10 VGS[V], GATE-SOURCE VOLTAGE - 0.1 4 Figure 2. ID-VDS 1.6 -1.4 3 VDS[V], DRAIN-SOURCE VOLTAGE VDS[V], DRAIN-SOURCE VOLTAGE 0.0 -1.6 VGS = -0.6V 0 10 1 0.1 1 IDSS[mA], DRAIN CURRENT Figure 5. VGS(off)-IDSS ©2002 Fairchild Semiconductor Corporation 1 10 VDS[V], DRAIN-SOURCE VOLTAGE Figure 6. CISS-VDS Rev. B1, March 2002 FJX597J Typical Characteristics (Continued) 140 VGS = 0 f = 1MHz 120 PD[mW], POWER DISSIPATION Crss[pF], OUTPUT CAPACITANCE 10 1 100 80 60 40 20 0 0.1 1 0 10 25 50 75 100 125 VDS[V], DRAIN-SOURCE VOLTAGE Ta[ C], AMBIENT TEMPERATURE Figure 1. CRSS-VDS Figure 2. PD-TA -110 700 ZO:VCC =4.5V VI = 0, A CURVE RL = 1KΩ -112 IDSS:VDS=5V -114 -116 -118 -120 10 ZO[Ω ], OUTPUT RESISTANCE VNO[dB], OUTPUT NOISE VOLTAGE VNO:VCC =4.5V VIN = 10mV f = 1kHz 600 IDSS:VDS=5V 500 400 300 200 100 1000 10 100 IDSS[µA], DRAIN CURRENT 1000 IDSS[µA], DRAIN CURRENT Figure 3. VNO-IDSS Figure 4. ZO-IDSS 100 ZI:VCC =4.5V VIN = 10mV f = 1kHz 34 IDSS:VDS=5V 32 30 28 26 THD[%], TOTAL HARMONIC DISTORTION 36 ZI[MΩ ], INPUT RESISTANCE 150 o THD:VCC = 4.5V VIN = 30mV f = 1kHz IDSS:VDS = 5V 10 1 10 100 IDSS[µA], DRAIN CURRENT Figure 5. ZI-IDSS ©2002 Fairchild Semiconductor Corporation 1000 100 1000 IDSS[µA], DRAIN CURRENT Figure 6. THD-IDSS Rev. B1, March 2002 FJX597J Typical Characteristics (Continued) 10 ∆GVV:VCC = 4.5V → 1.5V VIN = 10mV f = 1kHz IDSS:VDS=5V 2 GV:VCC = 4.5V VIN = 10mV RL = 1kΩ 8 6 GV[dB], VOLTAGE GAIN ∆ GVV - I DSS [dB], REDUCED VOLTAGE CHARACTERISTIC 4 0 -2 -4 f = 1KHz IDSS:VDS = 5V 4 2 0 -2 -4 -6 -8 -6 10 100 -10 10 1000 100 1000 IDSS[µA], DRAIN CURRENT IDSS[µA], DRAIN CURRENT Figure 13. ∆GVV-IDSS Figure 14. GVV-IDSS THD[%], TOTAL HARMONIC DISTORTION 100 THD:VCC = 4.5V f = 1kHz IDSS:VDS = 5V 10 IDSS = 100µA IDSS = 200µA IDSS = 400µA 1 0.1 0 40 80 120 160 200 240 VIN[mV], INPUT VOLTAGE Figure 15. THD-VIN ©2002 Fairchild Semiconductor Corporation Rev. B1, March 2002 FJX597J Package Demensions SOT-323 2.00±0.20 3° 1.25±0.10 2.10±0.10 0.95±0.15 0.90 ±0.10 +0.05 0.05 –0.02 1.00±0.10 1.30±0.10 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, March 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SMP™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H5