H5N3004P Silicon N Channel MOS FET High Speed Power Switching ADE-208-1523 (Z) Rev.0 Apr. 2002 Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) • Avalanche ratings Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source H5N3004P Absolute Maximum Ratings (Ta=25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 300 V Gate to source voltage VGSS ±30 V Drain current ID 25 A 100 A 25 A 100 A 25 A 150 W Drain peak current ID (pulse) Note1 Body-drain diode reverse drain current IDR Body-drain diode reverse drain peak current IDR (pulse) Note Avalanche current IAPNote 1 3 Note2 Channel dissipation Pch Channel to case Thermal impedance θch-c 0.833 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Rev.0, Apr. 2002, page 2 of 10 H5N3004P Electrical Characteristics (Ta=25°C) Item Drain to source breakdown voltage Symbol Min Typ Max Unit Test Conditions V(BR)DSS 300 • — V ID = 10 mA, VGS = 0 Zero gate voltage drain current IDSS — • 1 µA VDS = 300 V, VGS = 0 Gate to source leak current IGSS — • ±0.1 µA VGS = ±30 V, VDS = 0 Gate to source cutoff voltage VGS(off) 3.0 • 4.0 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 15 25 — S ID = 12.5 A, VDS = 10 VNote RDS(on) — 0.076 0. 093 Ω ID = 12.5 A, VGS= 10 VNote Static drain to source on state resistance 4 4 Input capacitance Ciss — 3600 • pF VDS = 25 V Output capacitance Coss — 400 • pF VGS = 0 Reverse transfer capacitance Crss — 100 • pF f = 1 MHz Turn-on delay time td(on) — 50 • ns ID= 12.5 A tr — 120 — ns RL = 12 Ω td(off) — 180 • ns VGS = 10 V tf — 90 — ns Rg = 10 Ω Qg — 110 — nC VDD = 240 V Gate to source charge Qgs — 18 — nC VGS = 10 V Gate to drain charge Qgd — 55 — nC ID = 25 A Body-drain diode forward voltage VDF — 0.9 1.35 V IF = 25 A, VGS = 0 Body-drain diode reverse recovery time trr — 250 — ns IF = 25 A, VGS = 0 diF/dt = 100 A/µs Body-drain diode reverse recovery charge Qrr — 2.3 — µC Rise time Turn-off delay time Fall time Total gate charge Notes: 4. Pulse test Rev.0, Apr. 2002, page 3 of 10 H5N3004P Main Characteristics Power vs. Temperature Derating 300 Drain Current ID (A) Channel Dissipation Pch (W) Maximum Safe Operation Area 1000 200 150 100 50 100 PW 30 DC 10 er 100 150 by RDS(on) 1 Typical Output Characteristics t) 25 °C ) 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) 100 10 V 8V V DS = 10 V Pulse Test 80 80 7V 6.5 V 60 6V 40 5.5 V 20 Drain Current ID (A) Drain Current ID (A) ho Typical Transfer Characteristics 100 60 40 Tc = 75°C 20 VGS = 5 V 0 c= Ta = 25°C Case Temperature Tc (°C) Pulse Test 1s (T Operation in 200 m s( 1 this area is limited 0.1 50 ion µs s s 10 at 3 0.3 0 Op 0µ 1m = 10 10 4 8 12 16 20 Drain to Source Voltage VDS (V) Rev.0, Apr. 2002, page 4 of 10 25°C −25°C 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 5 Pulse Test 4 3 I D = 25 A 2 15 A 1 5A 0 12 4 8 Gate to Source Voltage 16 VGS 20 Static Drain to Source on State Resistance vs. Drain Current 200 Pulse Test VGS = 10 V, 15 V 100 50 20 10 1 (V) Static Drain to Source on State Resistance vs. Temperature 200 Pulse Test I D = 25 A V GS = 10 V 160 15 A 120 5A 80 40 0 −40 Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0 40 80 120 160 Case Temperature Tc (°C) 2 5 10 20 50 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (V) H5N3004P 100 50 20 Tc = −25°C 10 5 2 25°C 75°C 1 0.5 0.2 0.2 V DS = 10 V Pulse Test 0.5 1 2 5 10 20 50 100 Drain Current ID (A) Rev.0, Apr. 2002, page 5 of 10 H5N3004P Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 500 20000 Capacitance C (pF) 50000 200 100 50 Coss Crss 0 10000 VGS 16 12 VDS 200 8 100 4 V DD = 240 V 100 V 50 V 40 80 120 Gate Charge Rev.0, Apr. 2002, page 6 of 10 160 Qg (nC) 0 200 VGS (V) 20 V DD = 50 V 100 V 240 V 25 50 75 100 125 Drain to Source Voltage VDS (V) Gate to Source Voltage VDS (V) Drain to Source Voltage 500 50 I D = 25 A 0 1000 100 Dynamic Input Characteristics 300 2000 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 500 400 Ciss Switching Characteristics V GS = 10 V, VDD = 150 V PW = 10 µs, duty < 1 % R G =10 Ω (ns) 10 0.1 5000 200 di / dt = 100 A / µs V GS = 0, Ta = 25°C 20 VGS = 0 f = 1 MHz 10000 1000 Switching Time t Reverse Recovery Time trr (ns) 1000 tr t d(off) tf 100 tf t d(on) tr 10 0.1 0.3 1 3 Drain Current 10 ID 30 (A) 100 H5N3004P Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) Gate to Source Cutoff Voltage VGS(off) (V) 100 80 V GS = 0 V 60 40 20 5V 10 V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 VSD 2.0 5 V DS = 10 V 4 I D = 10 mA 3 1 mA 0.1 mA 2 1 0 -50 (V) 0 50 100 150 Case Temperature Tc (°C) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 200 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 150 V Vout 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.0, Apr. 2002, page 7 of 10 H5N3004P Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 qch 0.1 0.1 qch − c(t) = gs (t) • qch − c − c = 0.833°C/W, Tc = 25°C 0.05 PDM 0.03 0.02 1 0.0 0.01 10 µ lse t ho T 1s 1m 10 m Pulse Width PW (S) Rev.0, Apr. 2002, page 8 of 10 PW T PW pu 100 µ D= 100 m 1 10 H5N3004P Package Dimensions 15.6 ± 0.3 Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 As of July, 2001 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Hitachi Code JEDEC JEITA Mass (reference value) TO-3P — Conforms 5.0 g Rev.0, Apr. 2002, page 9 of 10 H5N3004P Disclaimer 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Apr. 2002, page 10 of 10