ETC H5N2504DS

H5N2504DL, H5N2504DS
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1375A (Z)
2nd. Edition
Jun. 2002
Features
• Low on-resistance
• Low leakage current
• High speed switching
• Low gate charge
• Avalanche ratings
Outline
DPAK-2
DPAK-S
4
4
D
1 2
3
H5N2504DS
G
S
1 2
3
H5N2504DL
1. Gate
2. Drain
3. Source
4. Drain
H5N2504DL, H5N2504DS
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
7
A
28
A
7
A
28
A
7
A
30
W
Note1
Drain peak current
ID (pulse)
Body-drain diode reverse drain
current
IDR
Body-drain diode reverse drain peak
current
IDR (pulse)
Avalanche current
IAP
Note1
Note3
Note2
Channel dissipation
Pch
Channel to case Thermal Impedance
θ ch-c
4.17
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
Rev.1, Jun. 2002, page 2 of 11
H5N2504DL, H5N2504DS
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
250
—
—
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
—
—
±0.1
µA
VGS = ±20 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 250 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
VDS = 10 V, ID = 1 mA
Static drain to source on state
RDS(on)
—
0.48
0.63
Ω
ID = 3.5 A, VGS = 10 V
resistance
RDS(on)
—
0.5
0.67
Ω
ID = 3.5 A, VGS = 4 V
Forward transfer admittance
|yfs|
5
8.5
—
S
ID = 3.5 A, VDS = 10 V
Input capacitance
Ciss
—
570
—
pF
VDS = 25 V
Output capacitance
Coss
—
60
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
12
—
pF
f = 1 MHz
Turn-on delay time
td(on)
—
13
—
ns
ID = 3.5 A
Rise time
tr
—
18
—
ns
VGS = 10 V
Turn-off delay time
td(off)
—
70
—
ns
RL = 35.7 Ω
Fall time
tf
—
8
—
ns
Rg = 10 Ω
Total gate charge
Qg
—
21
—
nC
VDD = 200 V
Gate to source charge
Qgs
—
2
—
nC
VGS = 10 V
Gate to drain charge
Qgd
—
6
—
nC
ID = 7 A
Body-drain diode forward voltage
VDF
—
0.85
1.30
V
IF = 7 A, VGS = 0
Body-drain diode reverse recovery trr
time
—
120
—
ns
IF = 7 A, VGS = 0
diF/dt = 100 A/µs
Body-drain diode reverse recovery Qrr
charge
—
0.48
—
µC
Note4
Note4
Note4
Notes: 4. Pulse test
Rev.1, Jun. 2002, page 3 of 11
H5N2504DL, H5N2504DS
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
100
ID (A)
30
30
20
10
10
µs
1
1 m 00
=
µs
DC
10 s
ms
Op
er
(1
at
sh
ion
ot)
(T
PW
10
3
Drain Current
Channel Dissipation
Pch (W)
40
1
c=
0.3
°C
)
0.1 Operation in
this area is
0.03 limited by RDS(on)
0
Ta = 25°C
0.01
50
100
Case Temperature
150
200
1
Tc (°C)
6V
4V
3.5 V
6
3V
4
2
VGS = 2.5 V
0
300 1000
VDS (V)
10
Pulse Test
V DS = 10 V
ID (A)
8
10 V
8V
4
8
12
16
20
Drain to Source Voltage VDS (V)
Rev.1, Jun. 2002, page 4 of 11
8
Pulse Test
6
Drain Current
ID (A)
10
30
3
10
100
Drain to Source Voltage
Typical Transfer Characteristics
Typical Output Characteristics
Drain Current
25
4
25°C
Tc = 75°C
2
0
–25°C
1
2
3
Gate to Source Voltage
4
5
VGS (V)
H5N2504DL, H5N2504DS
Pulse Test
4
3
2
2A
1
Static Drain to Source on State Resistance
RDS(on) (Ω)
0.1
0.2
12
4
8
16
20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
V GS = 4 V
1.2
ID=5A
0.8
2A
0.4
0
–40
1A
0
40
80
120
Case Temperature Tc (°C)
1
10 V
V GS = 4 V
0.2
1A
0
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
0.5
ID=5A
160
0.5
1
2
5
Drain Current
10
20
ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
VDS(on) (V)
5
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
50
20
10
Tc = –25°C
5
25°C
2
1
75°C
V DS = 10 V
Pulse Test
0.5
0.2
0.02 0.05 0.1 0.2
0.5 1
Drain Current
2
5
10
ID (A)
Rev.1, Jun. 2002, page 5 of 11
H5N2504DL, H5N2504DS
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
5000
500
2000
200
100
50
10
0.2
Ciss
500
200
100
50
Coss
20
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
20
VGS = 0
f = 1 MHz
1000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
Crss
10
5
0.5
1
2
5
10
Reverse Drain Current IDR (A)
0
20
20
40
60
Drain to Source Voltage
400
300
200
100
0
VGS
V DD = 50 V
100 V
200 V
VDS
16
12
8
V DD = 200 V
100 V
50 V
8
16
24
32
Gate Charge Qg (nc)
Rev.1, Jun. 2002, page 6 of 11
4
0
40
Switching Characteristics
1000
Switching Time t (ns)
I D= 7 A
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
20
VGS (V)
Dynamic Input Characteristics
500
80
100
VDS (V)
V GS = 10 V, V DD = 125 V
PW = 10 µs, duty < 1 %
R G =10 Ω
t d(off)
100
t d(on)
10
tr
1
0.2
0.5
1
2
Drain Current
tf
5
10
ID (A)
20
H5N2504DL, H5N2504DS
Reverse Drain Current
IDR (A)
10
8
6
4
2
V GS = 0 V
5,10 V
Pulse Test
0
0.6
0.8
1.2
Source to Drain Voltage
1.6
2.0
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current vs.
Source to Drain Voltage
Gate to Source Cutoff Voltage
vs. Temperature
5
V DS = 10 V
4
3
I D = 10mA
1mA
2
1
0
-50
VSD (V)
0.1mA
0
50
100
150
Case Temperature Tc (°C)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
200
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
V DD
= 125 V
Vout
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
Rev.1, Jun. 2002, page 7 of 11
H5N2504DL, H5N2504DS
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 4.17°C/W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
0.01
ulse
ot p
h
s
1
0.01
10 µ
100 µ
Rev.1, Jun. 2002, page 8 of 11
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
H5N2504DL, H5N2504DS
Package Dimensions
• H5N2504DL
As of January, 2002
1.7 ± 0.5
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
4.7 ± 0.5
1.2 ± 0.3
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
3.1 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
JEITA
Mass (reference value)
DPAK (L)-(2)
—
—
0.42 g
Rev.1, Jun. 2002, page 9 of 11
H5N2504DL, H5N2504DS
• H5N2504DS
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
6.5 ± 0.5
5.6 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.1, Jun. 2002, page 10 of 11
DPAK (S)
—
Conforms
0.28 g
H5N2504DL, H5N2504DS
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe Ltd.
Electronic Components Group
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585200
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00
Singapore 049318
Tel : <65>-6538-6533/6538-8577
Fax : <65>-6538-6933/6538-3877
URL : http://semiconductor.hitachi.com.sg
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen
Postfach 201, D-85619 Feldkirchen
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon Hong Kong
Tel : <852>-2735-9218
Fax : <852>-2730-0281
URL : http://semiconductor.hitachi.com.hk
Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.1, Jun. 2002, page 11 of 11