ETC H7N0307LD|H7N0307LS|H7N0307LM

H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1516E(Z)
6th. Edition
Aug. 2002
Features
• Low on-resistance
• RDS(on) = 4.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4
4
D
1
G
1
S
2
2
3
H7N0307LS
3
H7N0307LD
1
2
3
H7N0307LM
1. Gate
2. Drain
3. Source
4. Drain
H7N0307LD, H7N0307LS, H7N0307LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
60
A
240
A
60
A
90
W
Note 1
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Channel dissipation
Pch
Channel to Case Thermal Impedance
θch-c
1.39
°C/W
Channel to Ambient Thermal Impedance
θch-a
89
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Rev.5, Aug. 2002, page 2 of 12
Note 2
H7N0307LD, H7N0307LS, H7N0307LM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
V
ID = 10 mA, VGS = 0
Drain to source breakdown voltage V(BR)DSS
30
—
—
Gate to source breakdown voltage
V(BR)GSS
±20
—
—
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
10
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V*
Static drain to source on state
RDS(on)
—
4.6
5.8
mΩ
ID = 30 A, VGS = 10 V*
—
8.0
11.5
mΩ
ID = 30 A, VGS = 4.5 V*
40
65
—
S
ID = 30 A, VDS = 10V *
resistance
Forward transfer admittance
|yfs|
IG = ±100 µA, VDS = 0
1
1
1
1
Input capacitance
Ciss
—
2500
—
pF
VDS = 10 V
Output capacitance
Coss
—
650
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
350
—
pF
f = 1 MHz
Total gate charge
Qg
—
40
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
7
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
8
—
nc
ID = 60 A
Turn-on delay time
td(on)
—
20
—
ns
VGS = 10 V, ID = 30A
Rise time
tr
—
300
—
ns
RL = 0.33 Ω
Turn-off delay time
td(off)
—
70
—
ns
Rg = 4.7 Ω
Fall time
tf
—
20
—
ns
Body–drain diode forward voltage
VDF
—
0.92
—
V
IF = 60 A, VGS = 0
—
60
—
ns
IF = 60 A, VGS = 0
diF/ dt = 50 A/µs
Body–drain diode reverse recovery trr
time
Notes: 1. Pulse test
Rev.5, Aug. 2002, page 3 of 12
H7N0307LD, H7N0307LS, H7N0307LM
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
(A)
80
40
10
1
0.1
50
100
Case Temperature
150
200
Tc (°C)
era PW
tio
n =1
0m
s
Operation in
this area is
limited by R DS(on)
Typical Transfer Characteristics
50
10V
V DS = 10 V
Pulse Test
3.5 V
(A)
4.5 V
ID
40
Pulse Test
30
20
3V
10
Drain Current
(A)
Op
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
50
ID
µs
Tc = 25°C
1 shot Pulse
0
Drain Current
1 m 100
s µs
DC
ID
120
10
100
Drain Current
Channel Dissipation
Pch (W)
160
40
30
20
25°C
Tc = 75°C
-25°C
10
VGS = 2.5 V
0
2
4
6
Drain to Source Voltage
Rev.5, Aug. 2002, page 4 of 12
8
10
V DS (V)
0
1
2
3
Gate to Source Voltage
5
4
V GS (V)
H7N0307LD, H7N0307LS, H7N0307LM
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
0.16
0.08
I D = 10 A
0.04
5A
2A
Static Drain to Source on State Resistance
R DS(on) (m Ω)
0
4
8
12
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I D = 2 A, 5 A, 10 A
12
V GS = 4.5 V
8
2 A, 5 A, 10 A
4
10 V
0
-40
Drain to Source On State Resistance
R DS(on) (m Ω)
0.12
Pulse Test
0
40
80
120
160
Case Temperature Tc (°C)
20
VGS = 4.5 V
10
5
10 V
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
V DS(on) (V)
0.20
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
Tc = -25°C
30
75°C
10
25°C
3
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3
1
3
10
30
100
Drain Current I D (A)
Rev.5, Aug. 2002, page 5 of 12
H7N0307LD, H7N0307LS, H7N0307LM
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
500
3000
Capacitance C (pF)
10000
Reverse Recovery Time trr (ns)
1000
200
100
50
20
10
0.1
Ciss
1000
Coss
300
Crss
100
30
di / dt = 50 A / µs
V GS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
10
0
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
16
30
V DD = 25 V
10 V 12
5V
V DS
20
0
8
V DD = 25 V
10 V
5V
20
40
60
80
Gate Charge Qg (nc)
Rev.5, Aug. 2002, page 6 of 12
4
0
100
Switching Time t (ns)
V GS
40
10
500
20
V GS (V)
I D = 60 A
Gate to Source Voltage
Drain to Source Voltage
V DS (V)
Dynamic Input Characteristics
50
10
20
30
40
50
Drain to Source Voltage V DS (V)
Switching Characteristics
200
100
tr
t d(off)
50
t d(on)
20
tf
10
V GS = 10 V , VDS = 10 V
Rg = 4.7 Ω, duty < 1 %
5
2 5 10 20
0.1 0.2 0.5 1
Drain Current I D (A)
50 100
H7N0307LD, H7N0307LS, H7N0307LM
Reverse Drain Current vs.
Souece to Drain Voltage
Reverse Drain Current I DR (A)
100
80
10 V
60
V GS = 0
5V
40
20
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.2
θ ch - c(t) = γs (t) • θ ch - c
θ ch - c = 1.38°C/ W, Tc = 25°C
0.1
0.05
0.02
e
1
0.0 puls
t
o
h
1s
PDM
D=
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Rev.5, Aug. 2002, page 7 of 12
H7N0307LD, H7N0307LS, H7N0307LM
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 10 V
Vout
10%
10%
90%
td(on)
Rev.5, Aug. 2002, page 8 of 12
tr
10%
90%
td(off)
tf
H7N0307LD, H7N0307LS, H7N0307LM
Package Dimensions
• H7N0307LD
Unit: mm
2.54 ± 0.5
(1.4)
2.54 ± 0.5
11.0 ± 0.5
10.0
0.2
0.86 +– 0.1
11.3 ± 0.5
1.37 ± 0.2
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
10.2 ± 0.3
2.49 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LDPAK (L)
—
—
1.4 g
Rev.5, Aug. 2002, page 9 of 12
H7N0307LD, H7N0307LS, H7N0307LM
• H7N0307LS
Unit: mm
7.8
7.0
(1.5)
0.3
10.0 +– 0.5
0.2
0.1 +– 0.1
2.2
2.49 ± 0.2
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
3.0 +– 0.5
1.3 ± 0.2
2.54 ± 0.5
8.6 ± 0.3
(1.5)
1.37 ± 0.2
7.8
6.6
1.3 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.5, Aug. 2002, page 10 of 12
1.7
(1.4)
4.44 ± 0.2
10.2 ± 0.3
LDPAK (S)-(1)
—
—
1.3 g
H7N0307LD, H7N0307LS, H7N0307LM
• H7N0307LM
Unit: mm
2.54 ± 0.5
7.8
7.0
(2.3)
0.3
10.0 +– 0.5
0.2
0.1 +– 0.1
2.2
2.49 ± 0.2
0.2
0.86 +– 0.1
2.54 ± 0.5
1.7
7.8
6.6
1.3 ± 0.2
0.3
5.0 +– 0.5
1.3 ± 0.2
8.6 ± 0.3
(1.5)
1.37 ± 0.2
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.4 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LDPAK (S)-(2)
—
—
1.35 g
Rev.5, Aug. 2002, page 11 of 12
H7N0307LD, H7N0307LS, H7N0307LM
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.5, Aug. 2002, page 12 of 12