ETC HAT1072H

HAT1072H
Silicon P Channel Power MOS FET
Power Switching
ADE-208-1534E (Z)
6th. Edition
May 2002
Features
• Capable of -4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 3.6 mΩ typ (at VGS = -10 V)
Outline
LFPAK
5
5
D
4
G
3
1 2
4
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
HAT1072H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
-30
V
Gate to source voltage
VGSS
-20/+10
V
Drain current
ID
-40
A
-160
A
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Channel dissipation
Pch
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc=25°C
Rev.5, May 2002, page 2 of 10
Note1
-40
A
30
W
Tch
150
°C
Tstg
– 55 to + 150
°C
Note2
HAT1072H
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
-30
—
—
V
ID = -10 mA, VGS = 0
Gate to source leak current
IGSS
—
—
± 0.1
µA
VGS = -20,+10 V, VDS = 0
Zero gate voltege drain current
IDSS
—
—
-1
µA
VDS = -30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
-0.5
—
-2.0
V
VDS = -10 V, I D = -1 mA
Static drain to source on state
RDS(on)
—
3.6
4.5
mΩ
ID = -20 A, VGS = -10 V
resistance
RDS(on)
—
5.3
7.7
mΩ
ID = -20 A, VGS = -4.5 V
Forward transfer admittance
|yfs|
36
60
—
S
ID = -20 A, VDS = -10 V
Input capacitance
Ciss
—
9500
—
pF
VDS = -10 V
Output capacitance
Coss
—
1300
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
700
—
pF
f = 1 MHz
Total gate charge
Qg
—
155
—
nc
VDD = -10 V
Gate to source charge
Qgs
—
28
—
nc
VGS = -10 V
Gate to drain charge
Qgd
—
26
—
nc
ID = -40 A
Turn-on delay time
td(on)
—
28
—
ns
VGS = -10 V, ID = -20 A
Rise time
tr
—
60
—
ns
VDD ≅ -10 V
Turn-off delay time
td(off)
—
305
—
ns
RL = 0.5 Ω
Fall time
tf
—
140
—
ns
Rg = 4.7 Ω
Body–drain diode forward
voltage
VDF
—
0.87
1.14
V
IF = -40 A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
110
—
ns
IF = -40 A, VGS = 0
diF/ dt = 100 A/ µs
Note3
Note3
Note3
Note3
Notes: 3. Pulse test
Rev.5, May 2002, page 3 of 10
HAT1072H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
-500
I D (A)
Pch (W)
40
Drain Current
Channel Dissipation
30
20
10
-100
PW
-10
DC
Op
=1
era
1m
10
µ
0µ s
s
s
0m
tio
s
n
-1 Operation in
this area is
limited by R DS(on)
-0.1
Tc = 25°C
1 shot Pulse
0
50
100
Case Temperature
150
200
Tc (°C)
-0.01
-0.1 -0.3
-1
-3
-10 -30 -100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
Typical Transfer Characteristics
-50
-50
-3.5 V
V DS = -10 V
Pulse Test
-10 V
-2.8 V
-40
ID
4.5 V
(A)
Pulse Test
-30
-30
-2.6 V
-20
-10
Drain Current
I D (A)
-40
Drain Current
10
-20
-10
Tc = 75°C
25°C
-25°C
VGS = -2.2 V
0
-2
-4
-6
Drain to Source Voltage
Rev.5, May 2002, page 4 of 10
-8
-10
V DS (V)
0
-1
-2
-3
Gate to Source Voltage
-5
-4
V GS (V)
HAT1072H
Pulse Test
Drain to Source Voltage
-0.16
-0.12
I D = -20 A
-0.08
-10 A
-0.04
-5 A
Static Drain to Source on State Resistance
R DS(on) (m Ω)
0
-4
-8
-12
Gate to Source Voltage
-16
-20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12
I D = -5 A, -10 A, -20 A
8
V GS = -4.5 V
4
0
-40
-10 V
-5 A, -10 A, -20 A
0
40
80
120
160
Case Temperature Tc (°C)
20
10
VGS = -4.5 V
5
-10 V
2
1
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
V DS(on) (V)
-0.20
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
Drain to Source On State Resistance
R DS(on) (m Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
100
Tc = -25°C
30
10
25°C
75°C
3
1
V DS = -10 V
Pulse Test
0.2
-0.1
-0.3
-1
-3
-10
-30
-100
Drain Current I D (A)
Rev.5, May 2002, page 5 of 10
HAT1072H
Typical Capacitance vs.
Drain to Source Voltage
1000
30000
500
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
-0.1
3000
Coss
1000
0
-40
-16
I D = -40 A
-50
0
-12
V GS
80
160
240
320
Gate Charge Qg (nc)
Rev.5, May 2002, page 6 of 10
V GS (V)
-20
400
Switching Time t (ns)
-30
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
-4
V DD = -25 V
-10 V
-5 V
-30
-40
-50
Switching Characteristics
-8
V DS
-20
500
0
-20
-10
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
-10
VGS = 0
f = 1 MHz
30
-0.3
-1
-3
-10 -30 -100
Reverse Drain Current I DR (A)
V DD = -5 V
-10 V
-25 V
Crss
300
100
di / dt = -100 A / µs
V GS = 0, Ta = 25°C
0
Ciss
t d(off)
200
100
50
20
10
tf
tr
t d(on)
V GS = -10 V, V DS = -10 V
Rg = 4.7 Ω, duty < 1 %
5
-0.1 -0.2 -0.5 -1 -2
-5 -10 -20
Drain Current I D (A)
-50
HAT1072H
Reverse Drain Current vs.
Souece to Drain Voltage
Reverse Drain Current I DR (A)
-50
-40
-30
-10 V
V GS = 0
-5 V
-20
-10
Pulse Test
0
-0.4
-0.8
-1.2
Source to Drain Voltage
-1.6
-2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.2
θ ch - c(t) = γs (t) · θ ch - c
θ ch - c = 4.17°C/ W, Tc = 25°C
0.1
0.05
PDM
0.02
1
0.0
e
uls
T
1
100 µ
PW
T
PW
p
ot
sh
0.01
10 µ
D=
1m
10 m
100 m
1
10
Pulse Width PW (s)
Rev.5, May 2002, page 7 of 10
HAT1072H
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Rg
Switching Time Waveform
Vin
10%
D.U.T.
RL
90%
Vin
-10 V
V DD
= -10 V
Vout
td(on)
Rev.5, May 2002, page 8 of 10
90%
90%
10%
10%
tr
td(off)
tf
HAT1072H
Package Dimensions
As of January, 2002
Unit: mm
4.9
5.3 Max
4.0 ± 0.2
+0.05
1.0
4.2
6.1 –0.3
+0.1
3.95
5
4
0˚ – 8˚
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
0.25 –0.03
0.75 Max
1.27
0.10
0.40 ± 0.06
0.25 M
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LFPAK
—
—
0.080 g
Rev.5, May 2002, page 9 of 10
HAT1072H
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
Rev.5, May 2002, page 10 of 10