ETC H5N5007P

H5N5007P
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1404B (Z)
3rd. Edition
Feb. 2002
Features
• Low on-resistance
• Low leakage current
• High speed switching
• Low gate charge
Outline
TO–3P
D
G
1
S
2
3
1. Gate
2. Drain (Flange)
3. Source
H5N5007P
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
25
A
100
A
25
A
7
A
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Avalanche current
IAP
Note1
Note3
Note2
Channel dissipation
Pch
150
W
Channel to case Thermal Impedance
θch-c
0.833
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Tch ≤150°C
Rev.2, Feb. 2002, page 2 of 10
H5N5007P
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
Voltage
V(BR)DSS
500
—
—
V
ID = 10mA, VGS = 0
Gate to source leak current
IGSS
—
—
±0.1
µA
VGS = ±30V, VDS = 0
Zero gate voltege drain current
IDSS
—
—
1
µA
VDS = 500 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
3.0
—
4.0
V
ID = 1mA, VDS = 10V
Static drain to source on state
Resistance
RDS(on)
—
0.18
0.225
Ω
ID =12.5A, VGS = 10V
Forward transfer admittance
|yfs|
14
24
—
S
ID = 12.5A, VDS = 10V
Note4
Input capacitance
Ciss
—
3900
—
pF
VDS = 25V
Output capacitance
Coss
—
375
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
78
—
pF
f = 1MHz
Turn-on delay time
td(on)
—
55
—
ns
ID = 12.5A
Rise time
tr
—
110
—
ns
VGS = 10V
Turn-off delay time
td(off)
—
225
—
ns
RL = 20Ω
Fall time
tf
—
110
—
ns
Rg = 10Ω
Total gate charge
Qg
—
135
—
nC
VDD = 400V
Gate to source charge
Qgs
—
22
—
nC
VGS = 10V
Gate to drain charge
Qgd
—
74
—
nC
ID = 25A
Body–drain diode forward voltage VDF
—
0.9
1.4
V
IF = 25A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
390
—
ns
IF = 25A, VGS = 0
diF/ dt =100A/µs
Body–drain diode reverse
recovery charge
Qrr
—
5
—
µC
Note:
Note4
4. Pulse test
Rev.2, Feb. 2002, page 3 of 10
H5N5007P
Main Characteristics
Power vs. Temparature Derating
1000
100
50
I D (A)
150
0
100
10
30
50
100
150
200
Tc (°C)
DC
(T
c=
1
10 10 µ
0
s
s µs
m
Op
25
er
at
i
°C on
)
0.3
Operation in this
0.03 area is limited
by R DS(on)
Ta = 25°C
0.01
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
Typical Output Characteristics
50
50
Pulse Test
10 V
6V
8V
I D (A)
40
30
5.5 V
20
10
VGS = 5 V
Drain Current
I D (A)
1
PW = 10 ms (1shot)
3
0.1
Case Temparature
Drain Current
Maximum Safe Operation Area
300
Drain Current
Channel Dissipation
Pch (W)
200
40
V DS = 10 V
Pulse Test
30
20
10
−25°C
Tc = 75°C
25°C
0
4
8
12
16
20
Drain to Source Voltage V DS (V)
Rev.2, Feb. 2002, page 4 of 10
0
2
4
6
Gate to Source Voltage
10
8
V GS (V)
H5N5007P
8
6
I D = 25 A
4
15 A
2
5A
Static Drain to Source on State Resistance
RDS(on) (Ω)
0
12
4
8
16
20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
V GS = 10 V
I D = 25 A
0.3
15 A
0.2
5A
0.1
0
−25
0
25 50 75 100 125 150
Cace Temperature Tc (°C)
RDS(on) (Ω)
Pulse Test
Drain to Source On State Resistance
10
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
V DS(on) (V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
VGS = 10 V, 15 V
0.5
0.2
0.1
0.05
0.02
0.01
1
100
50
2
5
10 20
50
Drain Current I D (A)
100
Forward Transfer Admittance vs.
Drain Current
Tc = −25°C
20
10
25°C
5
2
75°C
1
0.5
V DS = 10 V
Pulse Test
0.2
0.1
0.1 0.2 0.5 1
2
5 10 20
Drain Current
50 100
I D (A)
Rev.2, Feb. 2002, page 5 of 10
H5N5007P
Typical Capacitance vs.
Drain to Source Voltage
100000
50000
500
20000
200
10000
5000
Capacitance C (pF)
1000
100
50
10
0.1
0
VDS
8
4
200
0
0
VDD = 400 V
250 V
100 V
40
80
Gate Charge
Rev.2, Feb. 2002, page 6 of 10
120
160
Qg (nC)
0
200
V GS (V)
12
100
150
200
Switching Characteristics
10000
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
VGS
50
Drain to Source Voltage V DS (V)
16
VDD = 100 V
250 V
400 V
Crss
20
10
I D = 25 A
400
100
50
Dynamic Input Characteristics
600
Coss
200
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
800
Ciss
1000
500
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
20
VGS = 0
f = 1 MHz
2000
Switching Time t (ns)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
V GS = 10 V, V DD = 250 V
PW = 5 µs, duty ≤ 1%
R G = 10 Ω
tr
1000
tf
t d(off)
100 t d(on)
tf
tr
10
0.1
0.3
1
3
Drain Current
10
30
I D (A)
100
H5N5007P
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverce Drain Current vs.
Source to Drain Voltage
Gate to Source Cutoff Voltage
V GS(off) (V)
Reverce Drain Current I DR (A)
100
80
60
40
20
V GS = 0 V
5,10 V
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
5
V DS = 10 V
I D = 10mA
4
1mA
3
0.1mA
2
1
0
-25
V SD (V)
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 250 V
Vout
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
Rev.2, Feb. 2002, page 7 of 10
H5N5007P
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
PDM
0.03
0.02
1
0.0
0.01
10 µ
e
p
ot
T
h
100 µ
Rev.2, Feb. 2002, page 8 of 10
PW
T
PW
uls
1s
D=
1m
10 m
100 m
Pulse Width PW (s)
1
10
H5N5007P
Package Dimensions
15.6 ± 0.3
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
As of July, 2001
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Hitachi Code
JEDEC
JEITA
Mass (reference value)
TO-3P
—
Conforms
5.0 g
Rev.2, Feb. 2002, page 9 of 10
H5N5007P
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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traffic, safety equipment or medical equipment for life support.
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.2, Feb. 2002, page 10 of 10