H5N5007P Silicon N Channel MOS FET High Speed Power Switching ADE-208-1404B (Z) 3rd. Edition Feb. 2002 Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source H5N5007P Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID 25 A 100 A 25 A 7 A Drain peak current ID(pulse) Body-drain diode reverse drain current IDR Avalanche current IAP Note1 Note3 Note2 Channel dissipation Pch 150 W Channel to case Thermal Impedance θch-c 0.833 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Tch ≤150°C Rev.2, Feb. 2002, page 2 of 10 H5N5007P Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown Voltage V(BR)DSS 500 — — V ID = 10mA, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±30V, VDS = 0 Zero gate voltege drain current IDSS — — 1 µA VDS = 500 V, VGS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.0 V ID = 1mA, VDS = 10V Static drain to source on state Resistance RDS(on) — 0.18 0.225 Ω ID =12.5A, VGS = 10V Forward transfer admittance |yfs| 14 24 — S ID = 12.5A, VDS = 10V Note4 Input capacitance Ciss — 3900 — pF VDS = 25V Output capacitance Coss — 375 — pF VGS = 0 Reverse transfer capacitance Crss — 78 — pF f = 1MHz Turn-on delay time td(on) — 55 — ns ID = 12.5A Rise time tr — 110 — ns VGS = 10V Turn-off delay time td(off) — 225 — ns RL = 20Ω Fall time tf — 110 — ns Rg = 10Ω Total gate charge Qg — 135 — nC VDD = 400V Gate to source charge Qgs — 22 — nC VGS = 10V Gate to drain charge Qgd — 74 — nC ID = 25A Body–drain diode forward voltage VDF — 0.9 1.4 V IF = 25A, VGS = 0 Body–drain diode reverse recovery time trr — 390 — ns IF = 25A, VGS = 0 diF/ dt =100A/µs Body–drain diode reverse recovery charge Qrr — 5 — µC Note: Note4 4. Pulse test Rev.2, Feb. 2002, page 3 of 10 H5N5007P Main Characteristics Power vs. Temparature Derating 1000 100 50 I D (A) 150 0 100 10 30 50 100 150 200 Tc (°C) DC (T c= 1 10 10 µ 0 s s µs m Op 25 er at i °C on ) 0.3 Operation in this 0.03 area is limited by R DS(on) Ta = 25°C 0.01 0.1 0.3 1 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) Typical Transfer Characteristics Typical Output Characteristics 50 50 Pulse Test 10 V 6V 8V I D (A) 40 30 5.5 V 20 10 VGS = 5 V Drain Current I D (A) 1 PW = 10 ms (1shot) 3 0.1 Case Temparature Drain Current Maximum Safe Operation Area 300 Drain Current Channel Dissipation Pch (W) 200 40 V DS = 10 V Pulse Test 30 20 10 −25°C Tc = 75°C 25°C 0 4 8 12 16 20 Drain to Source Voltage V DS (V) Rev.2, Feb. 2002, page 4 of 10 0 2 4 6 Gate to Source Voltage 10 8 V GS (V) H5N5007P 8 6 I D = 25 A 4 15 A 2 5A Static Drain to Source on State Resistance RDS(on) (Ω) 0 12 4 8 16 20 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 V GS = 10 V I D = 25 A 0.3 15 A 0.2 5A 0.1 0 −25 0 25 50 75 100 125 150 Cace Temperature Tc (°C) RDS(on) (Ω) Pulse Test Drain to Source On State Resistance 10 Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage V DS(on) (V) Drain to Source Saturation Voltage vs Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test VGS = 10 V, 15 V 0.5 0.2 0.1 0.05 0.02 0.01 1 100 50 2 5 10 20 50 Drain Current I D (A) 100 Forward Transfer Admittance vs. Drain Current Tc = −25°C 20 10 25°C 5 2 75°C 1 0.5 V DS = 10 V Pulse Test 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 Drain Current 50 100 I D (A) Rev.2, Feb. 2002, page 5 of 10 H5N5007P Typical Capacitance vs. Drain to Source Voltage 100000 50000 500 20000 200 10000 5000 Capacitance C (pF) 1000 100 50 10 0.1 0 VDS 8 4 200 0 0 VDD = 400 V 250 V 100 V 40 80 Gate Charge Rev.2, Feb. 2002, page 6 of 10 120 160 Qg (nC) 0 200 V GS (V) 12 100 150 200 Switching Characteristics 10000 Gate to Source Voltage V DS (V) Drain to Source Voltage VGS 50 Drain to Source Voltage V DS (V) 16 VDD = 100 V 250 V 400 V Crss 20 10 I D = 25 A 400 100 50 Dynamic Input Characteristics 600 Coss 200 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 800 Ciss 1000 500 di / dt = 100 A / µs V GS = 0, Ta = 25°C 20 VGS = 0 f = 1 MHz 2000 Switching Time t (ns) Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time V GS = 10 V, V DD = 250 V PW = 5 µs, duty ≤ 1% R G = 10 Ω tr 1000 tf t d(off) 100 t d(on) tf tr 10 0.1 0.3 1 3 Drain Current 10 30 I D (A) 100 H5N5007P Gate to Source Cutoff Voltage vs. Case Temperature Reverce Drain Current vs. Source to Drain Voltage Gate to Source Cutoff Voltage V GS(off) (V) Reverce Drain Current I DR (A) 100 80 60 40 20 V GS = 0 V 5,10 V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 5 V DS = 10 V I D = 10mA 4 1mA 3 0.1mA 2 1 0 -25 V SD (V) 0 25 50 75 100 125 150 Case Temperature Tc (°C) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 250 V Vout 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.2, Feb. 2002, page 7 of 10 H5N5007P Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 0.833°C/W, Tc = 25°C 0.1 0.05 PDM 0.03 0.02 1 0.0 0.01 10 µ e p ot T h 100 µ Rev.2, Feb. 2002, page 8 of 10 PW T PW uls 1s D= 1m 10 m 100 m Pulse Width PW (s) 1 10 H5N5007P Package Dimensions 15.6 ± 0.3 Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 As of July, 2001 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Hitachi Code JEDEC JEITA Mass (reference value) TO-3P — Conforms 5.0 g Rev.2, Feb. 2002, page 9 of 10 H5N5007P Disclaimer 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.2, Feb. 2002, page 10 of 10