RENESAS 2SK3446

2SK3446
Silicon N Channel Power MOS FET
Power Switching
ADE-208-1566F (Z)
7th. Edition
Jan. 2003
Features
• Capable of 2.5 V gate drive
• Low drive current
• Low on-resistance
• RDS(on)=1.5 Ω typ. (at VGS = 4 V)
Outline
TO-92MOD.
D
G
3
S
2
1
1. Source
2. Drain
3. Gate
2SK3446
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
150
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
1
A
4
A
1
A
0.9
W
Note1
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Rev.6, Jan. 2003, page 2 of 10
Note2
2SK3446
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
150
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±10
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±8 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 150 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.5
—
1.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
1.5
1.95
Ω
ID = 0.5 A, VGS = 4 V
resistance
RDS(on)
—
1.9
2.5
Ω
ID = 0.5 A, VGS = 2.5 V
Forward transfer admittance
|yfs|
0.8
1.4
—
S
ID = 0.5 A, VDS = 10 V
Input capacitance
Ciss
—
98
—
pF
VDS = 10 V
Output capacitance
Coss
—
31
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
14
—
pF
f = 1 MHz
Total gate charge
Qg
—
3.5
—
nC
VDD = 100 V
Gate to source charge
Qgs
—
0.5
—
nC
VGS = 4 V
Gate to drain charge
Qgd
—
1.8
—
nC
ID = 1 A
Turn-on delay time
td(on)
—
8
—
ns
VGS = 4 V, ID = 0.5 A
Rise time
tr
—
12
—
ns
RL = 60 Ω
Turn-off delay time
td(off)
—
34
—
ns
Fall time
tf
—
19
—
ns
Body–drain diode forward voltage
VDF
—
1.0
1.5
V
IF = 1 A, VGS = 0
—
60
—
ns
IF = 1 A, VGS = 0
diF/ dt =100 A/µs
Body–drain diode reverse recovery trr
time
Note3
Note3
Note3
Note3
Notes: 3. Pulse test
Rev.6, Jan. 2003, page 3 of 10
2SK3446
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
10
0.8
0.4
PW
1
0.3
DC
=
10
s
(1
sh
O
ot
ra
tio
0.03 Operation in
this area is
0.01 limited by RDS(on)
100 µs
1 ms
m
pe
0.1
µs
)
n
0.003
0
50
100
150
Ambient Temperature
200
Ta (°C)
Ta = 25°C
0.001
0.1 0.3 1
3 10 30 100
500
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
2.5
5
Pulse Test
2.5 V
3V
2V
1.5
1
VGS = 1.5 V
0.5
0
2
4
6
Drain to Source voltage
Rev.6, Jan. 2003, page 4 of 10
10
8
V DS (V)
(A)
4V
4
ID
2
V DS = 10 V
Pulse Test
3
Drain current
Drain Current I D (A)
10
3
I D (A)
1.2
Drain Current
Channel Dissipation
Pch (W)
1.6
Tc = -25°C
25°C
75°C
2
1
0
2
4
6
Gate to Source Voltage
8
10
VGS (V)
3
Pulse Test
2
ID=1A
1
0.5 A
0.2 A
0
0
2
4
6
8
Static Drain to Source on State Resistance
RDS(on) (Ω)
Gate to Source Voltage
10
Static Drain to Source on State Resistance
vs. Temperature
5
Pulse Test
4
0.2 A
0.5
A
ID=1A
3
0.2 A
0.5 A
ID = 1 A
VGS = 2.5 V
2
1
0
–25
VGS = 4 V
0
25
50
75
Case Temperature
100 125 150
Tc
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
(°C)
VGS = 2.5 V
5
2
4V
1
0.5
0.2
0.1
0.1
VGS (V)
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
VDS(on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source on State Resistance
RDS(on) (Ω)
2SK3446
1
3
Drain Current
I D (A)
0.3
10
Forward Transfer Admittance vs.
Drain Current
10
3
Tc = -25°C
1
25°C
75°C
0.3
0.1
V DS = 10 V
Pulse Test
0.03
0.01
0.01 0.03
0.1
0.3
1
3
10
Drain Current I D (A)
Rev.6, Jan. 2003, page 5 of 10
2SK3446
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain Source Voltage
1000
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
300
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
100
30
10
300
Ciss
100
30
Coss
10
Crss
3
3
1
0.1
VGS = 0
f = 1 MHz
1
0.3
1
3
Reverse Drain Current
0
10
I DR (A)
10
80
40
0
4
V GS
VDD = 100 V
50 V
25 V
2
4
6
8
Gate Charge Qg (nC)
Rev.6, Jan. 2003, page 6 of 10
50
2
0
10
V GS (V)
100
t d(off)
Switching Time t (ns)
V DS
6
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
ID = 1 A
VDD = 100 V
50 V
25 V
40
Switching Characteristics
8
120
30
Drain Source Voltage V DS (V)
Dynamic Input Characteristics
160
20
30
tf
tr
10
t d(on)
3
1
0.1
V GS = 4 V, VDD = 30 V
PW = 5 µs, duty < 1 %
0.3
1
Drain Current
3
I D (A)
10
2SK3446
Reverse Drain Current vs.
Source to Drain Voltage
Gate to Source Voltage vs. Temperature
1.5
VDS = 10 V
Pulse Test
Gate to Source Voltage VGS (V)
3
ID = 10 mA
1.0
2
5V
1 mA
0.5
1
V GS = 0, −5 V
Pulse Test
0
1
2
Source to Drain Voltage
VSDF (V)
0
–25
0
25
50
75
Case Temperature
0.1 mA
100 125 150
Tc
(°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
Reverse Drain Current IDR (A)
4
10
1
D=1
0.5
0.2
0.1
0.1
θch - a(t) = γs (t) • θch - a
θch - a = 139°C/W, Ta = 25°C
0.05
PDM
0.02
0.01
0.01
10 µ
100 µ
PW
T
PW
lse
t pu
o
1sh
D=
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
100
1000
10000
Rev.6, Jan. 2003, page 7 of 10
2SK3446
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50 Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
Rev.6, Jan. 2003, page 8 of 10
tr
10%
90%
td(off)
tf
2SK3446
Package Dimensions
As of July, 2002
Unit: mm
4.8 ± 0.4
2.3 Max
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.55 Max
10.1 Min
8.0 ± 0.5
3.8 ± 0.4
0.5 Max
1.27
2.54
Hitachi Code
JEDEC
JEITA
Mass (reference value)
TO-92 Mod
—
Conforms
0.35 g
Rev.6, Jan. 2003, page 9 of 10
2SK3446
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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Copyright © Hitachi, Ltd., 2003. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.6, Jan. 2003, page 10 of 10