HITACHI HAT2096H

HAT2096H
Silicon N Channel Power MOS FET
Power Switching
ADE-208-1431B (Z)
3rd. Edition
Aug. 2002
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 4.2 mΩ typ. (at VGS = 10 V)
Outline
LFPAK
5
5
D
4
G
3
1 2
4
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
HAT2096H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
40
A
160
A
40
A
20
W
Note1
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to + 150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
Rev.2, Aug. 2002, page 2 of 10
Note2
HAT2096H
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
30
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
± 20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
± 10
µA
VGS = ±16 V, VDS = 0
Zero gate voltege drain current
IDSS
—
—
1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
4.2
5.3
mΩ
ID = 20 A, VGS = 10 V
resistance
RDS(on)
—
7.0
10
mΩ
ID = 20 A, VGS = 4.5 V
Forward transfer admittance
|yfs|
30
50
—
S
ID = 20 A, VDS = 10 V
Input capacitance
Ciss
—
2200
—
pF
VDS = 10 V
Output capacitance
Coss
—
600
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
330
—
pF
f = 1 MHz
Total gate charge
Qg
—
40
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
7
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
8
—
nc
ID = 40 A
Turn-on delay time
td(on)
—
20
—
ns
VGS = 10 V, ID = 20 A
Rise time
tr
—
49
—
ns
VDD ≅ 10 V
Turn-off delay time
td(off)
—
62
—
ns
RL = 0.5 Ω
Fall time
tf
—
15
—
ns
Rg = 4.7 Ω
Body–drain diode forward voltage
VDF
—
0.85
1.11
V
IF = 40 A, VGS = 0
—
60
—
ns
IF = 40 A, VGS = 0
diF/ dt = 50 A/ µs
Body–drain diode reverse recovery trr
time
Note3
Note3
Note3
Note3
Notes: 3. Pulse test
Rev.2, Aug. 2002, page 3 of 10
HAT2096H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
I D (A)
500
30
20
10
PW
10
Op
s
=1
0m
era
s
tio
1
0.1
50
100
Case Temperature
150
200
n
Operation in
this area is
limited by R DS(on)
Tc (°C)
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
50
Typical Transfer Characteristics
50
10 V
3.5 V
V DS = 10 V
Pulse Test
Pulse Test
(A)
40
ID
4.5 V
30
Drain Current
I D (A)
DC
Tc = 25°C
1 shot Pulse
0
Drain Current
10
µ
10
0µ s
1m
s
100
Drain Current
Channel Dissipation
Pch (W)
40
3V
20
10
40
30
20
25°C
Tc = 75°C
-25°C
10
VGS = 2.5 V
0
2
4
6
Drain to Source Voltage
Rev.2, Aug. 2002, page 4 of 10
8
V DS (V)
10
0
1
2
3
Gate to Source Voltage
5
4
V GS (V)
HAT2096H
0.16
0.08
I D = 10 A
0.04
5A
2A
Static Drain to Source on State Resistance
R DS(on) (m Ω)
0
4
8
12
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I D = 2 A, 5 A, 10 A
12
8
V GS = 4.5 V
2 A, 5 A, 10 A
4
10 V
0
-40
Drain to Source On State Resistance
R DS(on) (m Ω)
0.12
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
0
40
80
120
160
Case Temperature Tc (°C)
20
10
VGS = 4.5 V
5
10 V
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
V DS(on) (V)
0.20
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
Tc = -25°C
30
75°C
10
25°C
3
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3
1
3
10
30
100
Drain Current I D (A)
Rev.2, Aug. 2002, page 5 of 10
HAT2096H
Typical Capacitance vs.
Drain to Source Voltage
1000
10000
500
3000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
0.1
Ciss
1000
di / dt = 50 A / µs
V GS = 0, Ta = 25°C
Coss
300
Crss
100
30
VGS = 0
f = 1 MHz
10
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
0
10
V DS
20
10
0
12
8
V DD = 25 V
10 V
5V
20
40
60
80
Gate Charge Qg (nc)
Rev.2, Aug. 2002, page 6 of 10
4
0
100
V GS (V)
100
Switching Time t (ns)
30
16
V DD = 25 V
10 V
5V
50
Switching Characteristics
V GS
40
40
200
20
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
I D = 40 A
30
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
20
t d(off)
50
tr
20
t d(on)
tf
10
5
V GS = 10 V , VDS = 10 V
Rg = 4.7 Ω, duty < 1 %
2
0.1 0.2
0.5 1
2
Drain Current
5 10
I D (A)
20
HAT2096H
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
50
40
10 V
V GS = 0
5V
30
20
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.2
θ ch - c(t) = γs (t) • θ ch - c
θ ch - c = 6.25°C/ W, Tc = 25°C
0.1
0.05
PDM
0.02
1
0.0
0.01
10 µ
lse
PW
T
PW
u
tp
ho
T
1s
100 µ
D=
1m
10 m
100 m
1
10
Pulse Width PW (s)
Rev.2, Aug. 2002, page 7 of 10
HAT2096H
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 10 V
Vout
10%
10%
90%
td(on)
Rev.2, Aug. 2002, page 8 of 10
tr
10%
90%
td(off)
tf
HAT2096H
Package Dimensions
As of January, 2002
Unit: mm
4.9
5.3 Max
4.0 ± 0.2
+0.05
1.0
4.2
6.1 –0.3
+0.1
3.95
5
4
0˚ – 8˚
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
0.25 –0.03
0.75 Max
1.27
0.10
0.40 ± 0.06
0.25 M
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LFPAK
—
—
0.080 g
Rev.2, Aug. 2002, page 9 of 10
HAT2096H
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contact Hitachi’s sales office before using the product in an application that demands especially high
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.2, Aug. 2002, page 10 of 10