BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.0 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: BK http://onsemi.com MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5 Vdc IC 1 Adc 1.56 13 0.67 5.0 Watts mW/°C Watts mW/°C TJ, Tstg –65 to 150 °C Symbol Max Collector Current Total Power Dissipation @ TA = 25°C Derate above 25°C PD (Note 1.) (Note 2.) Operating and Storage Temperature Range COLLECTOR 2 BASE 1 EMITTER 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath RθJA (Note 1.) (Note 2.) Unit °C/W 1 YM 2 3 BK SOT–89 CASE 1213 STYLE 2 80 190 TL Y = Year Code M = Month Code BK = Device Code °C Sec 260 10 1. FR–4 @ 1.0 X 1.0 inch Pad 2. FR–4 @ Minimum Pad ORDERING INFORMATION Device Package Shipping BCX56–10R1 SOT–89 1000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 – Rev. 0 1 Publication Order Number: BCX56–10R1/D BCX56–10R1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CBO 100 – – Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 80 – – Vdc Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO 5.0 – – Vdc Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO – – 100 nAdc Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO – – 10 µAdc 25 63 25 – – – – 160 – OFF CHARACTERISTICS ON CHARACTERISTICS (Note 3.) hFE DC Current Gain (IC = 5.0 mA, VCE = 2.0 V) (IC = 150 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) – Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) – – 0.5 Vdc Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) – – 1.0 Vdc fT – 130 – MHz DYNAMIC CHARACTERISTICS Current-Gain – Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% TYPICAL ELECTRICAL CHARACTERISTICS hFE, DC CURRENT GAIN 1000 TJ = 125°C TJ = 25°C 100 10 TJ = -55°C 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 2 1000 BCX56–10R1 1000 80 60 C, CAPACITANCE (pF) f, T CURRENTGAIN BANDWIDTH PRODUCT (MHz TYPICAL ELECTRICAL CHARACTERISTICS 100 TJ = 25°C 40 Cibo 20 10 8.0 6.0 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) Cobo 4.0 0.1 1000 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 1.0 V, VOLTAGE (VOLTS) 0.8 TJ = 25°C VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 500 1.0 TJ = 25°C 0.8 0.6 200°C 50 mA IC = 10mA 100mA 250mA 500mA 0.4 0.2 0 0.05 Figure 4. “On” Voltages 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 20 Figure 5. Collector Saturation Region STEP 1 PREHEAT ZONE 1 RAMP" STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150°C STEP 5 STEP 6 STEP 7 STEP 4 HEATING VENT COOLING HEATING ZONES 3 & 6 ZONES 4 & 7 205° TO SPIKE" SOAK" 219°C 170°C PEAK AT SOLDER 160°C JOINT 150°C 100°C 100 Figure 3. Capacitance VCE , COLLECTOREMITTER VOLTAGE (VOLTS) Figure 2. Current-Gain – Bandwidth Product 50 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TMAX TIME (3 TO 7 MINUTES TOTAL) Figure 6. Typical Solder Heating Profile http://onsemi.com 3 50 BCX56–10R1 PACKAGE DIMENSIONS SOT–89 (3–LEAD) CASE 1213–02 ISSUE C –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. 1213-01 OBSOLETE, NEW STANDARD 1213-02. C J F –B– L K D 0.10 E G M T B S A S –T– SEATING PLANE 2 PL 0.10 M T B S A S DIM A B C D E F G H J K L MILLIMETERS MIN MAX 4.40 4.60 2.40 2.60 1.40 1.60 0.37 0.57 0.32 0.52 1.50 1.83 1.50 BSC 3.00 BSC 0.30 0.50 0.80 ----4.25 INCHES MIN MAX 0.173 0.181 0.094 0.102 0.055 0.063 0.015 0.022 0.013 0.020 0.059 0.072 0.059 BSC 0.118 BSC 0.012 0.020 0.031 ----0.167 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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