ETC DBBSM35GB120DLC30

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM35GB120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Tvj= 25° C
VCES
1200
V
TC = 80 °C
IC,nom.
35
A
TC = 25 °C
IC
75
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 80°C
ICRM
70
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot
310
W
VGES
+/- 20V
V
IF
35
A
IFRM
70
A
I t
2
400
A s
VISOL
2,5
kV
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
2
I t - value, Diode
VR = 0V, t p = 10ms, T Vj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
2
Charakteristische Werte / Characteristic values
min.
typ.
max.
-
2,1
2,6
V
-
2,4
2,9
V
VGE(th)
4,5
5,5
6,5
V
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 35A, V GE = 15V, Tvj = 25°C
VCE sat
IC = 35A, V GE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
IC = 1,2mA, V CE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V...+15V
QG
-
0,35
-
µC
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cies
-
2
-
nF
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cres
-
0,13
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
VCE = 1200V, V GE = 0V, Tvj = 25°C
ICES
-
-
5
mA
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, V GE = 20V, Tvj = 25°C
IGES
-
-
400
nA
prepared by: Mod-D2; Mark Münzer
date of publication: 2003-01-10
approved by: SM TM; Wilhelm Rusche
revision: 3.0
1(8)
DB_BSM35GB120DLC_3.0
2003-01-10
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM35GB120DLC
Charakteristische Werte / Characteristic values
min.
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
VGE = ±15V, R G = 22Ω, Tvj = 25°C
td,on
VGE = ±15V, R G = 22Ω, Tvj = 125°C
Anstiegszeit (induktive Last)
rise time (inductive load)
tr
td,off
VGE = ±15V, R G = 22Ω, Tvj = 25°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
IC = 35A, V CE = 600V, V GE = ±15V
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
IC = 35A, V CE = 600V, V GE = ±15V
RG = 22Ω, Tvj = 125°C, Lσ = 120nH
RG = 22Ω, Tvj = 125°C, Lσ = 120nH
-
µs
-
µs
-
0,05
-
µs
-
0,05
-
µs
-
0,25
-
µs
-
0,30
-
µs
tf
-
0,03
-
µs
-
0,07
-
µs
Eon
-
4,5
-
mJ
Eoff
-
4,3
-
mJ
ISC
-
320
-
A
LσCE
-
40
-
nH
RCC‘+EE‘
-
1,2
-
mΩ
min.
typ.
max.
tP ≤ 10µs, V GE ≤ 15V, R G = 22Ω
TVj≤125°C, V CC=900V, V CEmax=VCES -LσCE ·di/dt
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
0,05
0,06
IC = 35A, V CE = 600V
VGE = ±15V, R G = 22Ω, Tvj = 125°C
Kurzschlußverhalten
SC Data
-
IC = 35A, V CE = 600V
VGE = ±15V, R G = 22Ω, Tvj = 25°C
VGE = ±15V, R G = 22Ω, Tvj = 125°C
Fallzeit (induktive Last)
fall time (inductive load)
max.
IC = 35A, V CE = 600V
VGE = ±15V, R G = 22Ω, Tvj = 25°C
VGE = ±15V, R G = 22Ω, Tvj = 125°C
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
typ.
IC = 35A, V CE = 600V
TC=25°C
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
IF = 35A, V GE = 0V, Tvj = 25°C
Rückstromspitze
peak reverse recovery current
IF = 35A, - di F/dt = 900A/µs
VF
IF = 35A, V GE = 0V, Tvj = 125°C
VR = 600V, V GE = -15V, Tvj = 25°C
IRM
VR = 600V, V GE = -15V, Tvj = 125°C
Sperrverzögerungsladung
recovered charge
1,8
2,3
V
1,7
2,2
V
-
36
-
A
-
45
-
A
IF = 35A, - di F/dt = 900A/µs
VR = 600V, V GE = -15V, Tvj = 25°C
Qr
VR = 600V, V GE = -15V, Tvj = 125°C
Abschaltenergie pro Puls
reverse recovery energy
-
-
3,6
-
µC
-
7,6
-
µC
-
1,3
-
mJ
-
2,8
-
mJ
IF = 35A, - di F/dt = 900A/µs
VR = 600V, V GE = -15V, Tvj = 25°C
VR = 600V, V GE = -15V, Tvj = 125°C
2(8)
Erec
DB_BSM35GB120DLC_3.0
2003-01-10
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM35GB120DLC
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
-
-
0,40
K/W
-
-
0,70
K/W
RthCK
-
0,05
-
K/W
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Tvj max
-
-
150
°C
Betriebstemperatur
operation temperature
Tvj op
-40
-
125
°C
Tstg
-40
-
125
°C
RthJC
Innerer Wärmewiderstand
thermal resistance, junction to case
Transistor / transistor, DC
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
λΠαστε = 1 W/m * K / λgrease = 1 W/m * K
Diode/Diode, DC
Lagertemperatur
storage temperature
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Al2O3
Kriechstrecke
creepage distance
20
mm
Luftstrecke
clearance distance
11
mm
CTI
comperative tracking index
275
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Schraube / screw M6
M
3,0
-
6,0
Nm
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Anschlüsse / terminals M5
M
2,5
-
5,0
Nm
Gewicht
weight
G
250
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3(8)
DB_BSM35GB120DLC_3.0
2003-01-10
Technische Information / Technical Information
BSM35GB120DLC
IGBT-Module
IGBT-Modules
Ausgangskennlinie (typisch)
Output characteristic (typical)
IC = f (VCE)
V GE = 15V
70
63
Tvj = 25°C
56
Tvj = 125°C
IC [A]
49
42
35
28
21
14
7
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
VCE [V]
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
IC = f (VCE)
T vj = 125°C
70
63
VGE = 17V
56
VGE = 15V
49
VGE = 13V
IC [A]
VGE = 11V
42
VGE = 9V
VGE = 7V
35
28
21
14
7
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
VCE [V]
4(8)
DB_BSM35GB120DLC_3.0
2003-01-10
Technische Information / Technical Information
BSM35GB120DLC
IGBT-Module
IGBT-Modules
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
IC = f (VGE)
VCE = 20V
70
63
Tvj = 25°C
56
Tvj = 125°C
IC [A]
49
42
35
28
21
14
7
0
5
6
7
8
9
10
11
12
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
(VF)
IF = f
70
63
Tvj = 25°C
56
Tvj = 125°C
IF [A]
49
42
35
28
21
14
7
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
VF [V]
5(8)
DB_BSM35GB120DLC_3.0
2003-01-10
Technische Information / Technical Information
BSM35GB120DLC
IGBT-Module
IGBT-Modules
Schaltverluste (typisch)
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)
Switching losses (typical) VGE=±15V, RG =22 Ω, VCE = 600V, T vj = 125°C
12
Eoff
10
Eon
Erec
E [mJ]
8
6
4
2
0
0
10
20
30
40
50
60
70
IC [A]
Schaltverluste (typisch)
Switching losses (typical)
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
VGE=±15V , I C = 35A , VCE = 600V , T vj = 125°C
21
Eoff
18
Eon
Erec
E [mJ]
15
12
9
6
3
0
0
30
60
90
120
150
180
210
RG [Ω]
6(8)
DB_BSM35GB120DLC_3.0
2003-01-10
Technische Information / Technical Information
BSM35GB120DLC
IGBT-Module
IGBT-Modules
Transienter Wärmewiderstand
Transient thermal impedance
ZthJC = f (t)
1
Zth:Diode
Zth:IGBT
0,01
0,001
0,001
0,01
0,1
1
10
t [s]
i
ri [K/kW] : IGBT
τi [s]
: IGBT
ri [K/kW] : Diode
τi [s]
: Diode
1
2
3
4
78,07
262,83
20,86
38,24
0,009
0,045
0,073
0,229
41,47
305,3
271,51
81,72
0,003
0,022
0,064
0,344
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
VGE = 15V, R G = 22 Ω, T vj= 125°C
80
70
60
IC [A]
ZthJC
[K / W]
0,1
50
IC,Modul
IC,Chip
40
30
20
10
0
0
200
400
600
800
1000
1200
1400
VCE [V]
7(8)
DB_BSM35GB120DLC_3.0
2003-01-10
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM35GB120DLC
8(8)
DB_BSM35GB120DLC_3.0
2003-01-10