ETC 2SK1636(L)|2SK1636(S)

2SK1636(L), 2SK1636(S)
Silicon N-Channel MOS FET
ADE-208-1304 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
LDPAK
4
4
1 2
1
2
3
3
D
G
S
1. Gate
2. Drain
3. Source
4. Drain
2SK1636(L), 2SK1636(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
15
A
60
A
15
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
Channel dissipation
Pch*
75
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
2
2SK1636(L), 2SK1636(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
250
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
250
µA
VDS = 200 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
I D = 1 mA, VDS = 10 V
Static Drain to source on state
resistance
RDS(on)
—
0.22
0.27
Forward transfer admittance
|yfs|
6.0
10.0
—
S
I D = 8 A, VDS = 10 V *1
Input capacitance
Ciss
—
1250
—
pF
VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
510
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
85
—
pF
Turn-on delay time
t d(on)
—
24
—
ns
I D = 8 A, VGS = 10 V,
Rise time
tr
—
85
—
ns
RL = 3.75
Turn-off delay time
t d(off)
—
110
—
ns
Fall time
tf
—
60
—
ns
Body to drain diode forward
voltage
VDF
—
1.0
—
V
I F = 15 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
400
—
ns
I F = 15 A, VGS = 0,
diF/dt = 100 A/µs
Note
I D = 8 A, VGS = 10 V *1
1. Pulse test
3
2SK1636(L), 2SK1636(S)
Power vs. Temperature Derating
Maximum Safe Operation Area
100
ar
n)
(o
O
is per
lim at
ite ion
d in
by th
R is
DS
s
s
(1
n
io
)
ot
Sh
t
ra
=
(T C
1
)
°C
25
Drain Current ID (A)
m
m
pe
O
3
µs
10
C
Channel Dissipation Pch (W)
1
=
10
D
40
0
PW
80
10
µs
30
10
ea
120
0.3
Ta = 25°C
0.1
0
50
100
Case Temperature TC (°C)
150
1
Typical Transfer Characteristics
Typical Transfer Characteristics
Drain Current ID (A)
16
12
10 V
8V
5.5 V
VDS = 10 V
Pulse Test
Pulse Test
5V
8
4.5 V
4
20
4V
16
Drain Current ID (A)
20
3
10
30
100 300 1,000
Drain to Source Voltage VDS (V)
12
8
4
Ta = 75°C
25°C
–25°C
VGS = 3.5 V
0
4
4
12
16
8
20
Drain to Source Voltage VDS (V)
0
2
6
8
4
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
10
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
2SK1636(L), 2SK1636(S)
Pulse Test
8
6
4
ID = 15 A
10 A
2
0
5A
5
Pulse Test
2
1
VGS = 10 V
0.5
15 V
0.2
0.1
0.05
1
2
6
8
4
10
Gate to Source Voltage VGS (V)
1.0
Pulse Test
VGS = 10 V
0.8
0.6
ID = 15 A
10 A
0.4
5A
0.2
0
–40
0
80
120
40
Case Temperature TC (°C)
5
10
20
Drain Current ID (A)
50
100
Forward Transfer Admittance
vs. Drain Current
160
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Temperature
2
50
VDS = 10 V
Pulse Test
20
TC = –25°C
10
25°C
75°C
5
2
1
0.5
0.5
1
2
5
10
20
Drain Current ID (A)
50
5
2SK1636(L), 2SK1636(S)
Typical Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
10,000
VGS = 0
f = 1 MHz
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1,000
200
100
50
Ciss
1,000
Coss
100
Crss
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
20
10
10
0.5
0
50
1
2
5
10 20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
VGS
100
ID = 15 A
12
VDS
8
4
VDD = 200 V
100 V
50 V
0
0
6
20
60
80
40
Gate Charge Qg (nc)
100
Switching Time t (ns)
200
16
500
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
VDD = 50 V
100 V
200 V
300
50
Switching Characteristics
20
500
400
20
10
30
40
Drain to Source Voltage VDS (V)
200
td (off)
100
tf
50
tr
td (on)
20
VGS = 10 V, PW = 2 µs
duty < 1%
10
5
0.2
0.5
1
2
5
Drain Current ID (A)
10
20
2SK1636(L), 2SK1636(S)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
20
Pulse Test
16
12
8
4
VGS = 10 V
Normalized Transient Thermal Impedance γS (t)
0
VGS = 0, –5 V
0.8
2.0
0.4
1.2
1.6
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D=1
1.0
0.5
0.3
0.2
θch–c (t) = γS (t) · θch–c
θch–c = 1.67°C/W, TC = 25°C
0.1
0.1
0.05
0.02
0.03 0.01
PDM
e
uls
ot P
h
1S
0.01
10 µ
T
100 µ
1m
10 m
Pulse Width PW (s)
PW
100 m
Switching Time Test Circuit
D = PW
T
1
10
Waveforms
Vin Monitor
90%
Vout Monitor
D.U.T
Vin
10%
RL
Vout
10%
10%
50 Ω
Vin
10 V
VDD
.
=. 30 V
td (on)
90%
tr
90%
td (off)
tf
7
2SK1636(L), 2SK1636(S)
Package Dimensions
As of January, 2001
Unit: mm
2.54 ± 0.5
(1.4)
2.54 ± 0.5
11.3 ± 0.5
10.0
1.27 ± 0.2
0.2
0.86 +– 0.1
0.76 ± 0.1
11.0 ± 0.5
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
10.2 ± 0.3
2.59 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
8
LDPAK (L)
—
—
1.4 g
2SK1636(L), 2SK1636(S)
As of January, 2001
Unit: mm
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
3.0 +– 0.5
1.27 ± 0.2
1.2 ± 0.2
(1.5)
7.8
7.0
1.7
7.8
6.6
1.3 ± 0.15
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (S)-(1)
—
—
1.3 g
9
2SK1636(L), 2SK1636(S)
As of January, 2001
Unit: mm
(1.5)
7.8
7.0
1.7
7.8
6.6
1.3 ± 0.2
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.2 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
5.0 +– 0.5
1.27 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
10
LDPAK (S)-(2)
—
—
1.35 g
2SK1636(L), 2SK1636(S)
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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Colophon 2.0
11