2SK2329(L), 2SK2329(S) Silicon N-Channel MOS FET ADE-208-1356 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK2329(L), 2SK2329(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±10 V Drain current ID 10 A 40 A 10 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 20 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 2 2SK2329(L), 2SK2329(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±10 — — V I G = ±200 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±6.5 V, VDS = 0 Zero gate voltage drain current I DSS — — 100 µA VDS = 25 V, VGS = 0 Gate to source cutoff voltage VGS(off) 0.4 — 1.4 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — 0.03 0.04 Ω ID = 5 A VGS = 4 V*1 — 0.04 0.06 Ω ID = 5 A VGS = 2.5 V*1 Forward transfer admittance |yfs| 10 18 — S ID = 5 A VDS = 10 V*1 Input capacitance Ciss — 1250 — pF VDS = 10 V Output capacitance Coss — 540 — pF VGS = 0 Reverse transfer capacitance Crss — 120 — pF f = 1 MHz Turn-on delay time t d(on) — 20 — ns ID = 5 A Rise time tr — 145 — ns VGS = 4 V Turn-off delay time t d(off) — 225 — ns RL = 2 Ω Fall time tf — 125 — ns Body to drain diode forward voltage VDF — 0.9 — V I F = 10 A, VGS = 0 Body to drain diode reverse recovery time t rr — 100 — ns I F = 10 A, VGS = 0, diF / dt = 20 A / µs Note 1. Pulse Test 3 2SK2329(L), 2SK2329(S) Power vs. Temperature Derating Maximum Safe Operation Area 100 I D (A) 30 20 10 50 100 150 Case Temperature 20 200 2 1 s Ta = 25 °C 1 2 5 10 20 50 Drain to Source Voltage V DS (V) Typical Transfer Characteristics (A) 2V 8 0 s 1m 20 12 4 =1 0.5 Tc (°C) ID 16 10 V 5V 4V 2.5 V PW µs 0µ 0m Op era s( tio 1s Operation in n( h T this area is c = ot) limited by R DS(on) 25 °C ) 5 0.1 0.5 VGS = 1.5 V 2 4 6 Drain to Source Voltage 8 10 V DS (V) Drain Current I D (A) DC 10 Typical Output Characteristics 20 Drain Current 10 0.2 0 4 10 50 Drain Current Channel Dissipation Pch (W) 40 V DS = 10 V Pulse Test 16 12 8 Tc = 75°C 25°C 4 0 –25°C 1 2 3 Gate to Source Voltage 5 4 V GS (V) 2SK2329(L), 2SK2329(S) 0.6 Drain to Source On State Resistance R DS(on) ( Ω ) V DS(on) (V) 1.0 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.8 0.4 Pulse Test 0.5 0.2 0.1 VGS = 2.5 V 0.05 I D = 10 A 0.2 Static Drain to Source on State Resistance vs. Drain Current 1 5A 2A 4V 0.02 0.01 2 4 6 Gate to Source Voltage 8 V GS (V) Static Drain to Source on State Resistance R DS(on) ( Ω) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 I D = 2 A, 5 A, 10 A 0.06 2.5 V 0.04 2 A, 5 A, 10 A 0.02 0 –40 0.1 0.2 10 V GS = 4 V 0 40 80 120 160 Case Temperature Tc (°C) 0.5 1 2 5 10 20 Drain Current Forward Transfer Admittance |yfs| (S) 0 50 20 50 100 I D (A) Forward Transfer Admittance vs. Drain Current Tc = –25 °C 10 25 °C 75 °C 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current I D (A) 5 2SK2329(L), 2SK2329(S) Typical Capacitance vs. Drain to Source Voltage Body to Drain Diode Reverse Recovery Time 5000 VGS = 0 f = 1 MHz 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 10 0.2 60 12 V GS I D = 10 A 40 8 V DS 20 4 V DD = 25 V 10 V 20 40 60 80 Gate Charge Qg (nc) 0 100 1000 20 30 40 50 Switching Characteristics V GS = 4 V, V DD = 10 V 500 PW = 3 µs, duty < 1 % Switching Time t (ns) 16 V DD = 10 V 25 V 10 Drain to Source Voltage V DS (V) V GS (V) 80 Crss 0 Gate to Source Voltage V DS (V) Drain to Source Voltage 6 200 50 Dynamic Input Characteristics 20 Coss 500 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) 100 0 Ciss 1000 100 di/dt = 20 A/µs V GS = 0, Ta = 25°C 20 2000 t d(off) 200 tf 100 50 tr t d(on) 20 10 0.2 0.5 1 2 Drain Current 5 10 I D (A) 20 2SK2329(L), 2SK2329(S) Reverse Drain Current vs. Souece to Drain Voltage 20 Reverse Drain Current I DR (A) Pulse Test 16 12 V GS = 0, –5 V 8 5V 4 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 0.3 0.1 0.03 D=1 0.5 0.2 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 0.0 t ho lse PDM Pu 1s D= PW T PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) 7 2SK2329(L), 2SK2329(S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 4V 50Ω V DD = 10 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK2329(L), 2SK2329(S) Package Dimensions As of January, 2001 1.7 ± 0.5 Unit: mm 2.3 ± 0.2 0.55 ± 0.1 4.7 ± 0.5 1.2 ± 0.3 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 3.1 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (L)-(2) — — 0.42 g 9 2SK2329(L), 2SK2329(S) As of January, 2001 2.3 ± 0.2 0.55 ± 0.1 (4.9) (5.3) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.7 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(1),(2) — Conforms 0.28 g 2SK2329(L), 2SK2329(S) As of January, 2001 (0.1) 2.3 ± 0.2 0.55 ± 0.1 (5.1) (5.1) (0.1) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(3) — Conforms 0.28 g 11 2SK2329(L), 2SK2329(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12