ETC 2SJ319(L)|2SJ319(S)

2SJ319(L), 2SJ319(S)
Silicon P-Channel MOS FET
ADE-208-1192 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter
Outline
DPAK-1
4
4
1
1
2
3
2 3
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SJ319(L), 2SJ319(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–200
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–3
A
–12
A
–3
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
1
2
Channel dissipation
Pch*
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–200
—
—
V
I D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
–100
µA
VDS = –160 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–2.0
—
–4.0
V
I D = –1 mA, VDS = –10 V
Static drain to source on state
resistance
RDS(on)
—
1.7
2.3
Forward transfer admittance
|yfs|
1.0
1.7
—
S
I D = –2 A, VDS = –10 V*1
Input capacitance
Ciss
—
330
—
pF
VDS = –10 V, VGS = 0,
Output capacitance
Coss
—
130
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
25
—
pF
Turn-on delay time
t d(on)
—
10
—
ns
I D = –2 A, VGS = –10 V,
Rise time
tr
—
30
—
ns
RL = 15
Turn-off delay time
t d(off)
—
40
—
ns
Fall time
tf
—
30
—
ns
Body to drain diode forward
voltage
VDF
—
–1.15
—
V
I F = –3 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
180
—
ns
I F = –3 A, VGS = 0,
diF/dt = 50 A/µs
Note:
2
1. Pulse test
I D = –2 A, VGS = –10 V*1
2SJ319(L), 2SJ319(S)
Power vs. Temperature Derating
Maximum Safe Operation Area
–50
–30
I D (A)
15
Drain Current
Channel Dissipation
Pch (W)
20
10
5
–10
–3
–1
–0.3
–0.1
–0.05
0
50
100
150
Case Temperature
200
–1
Typical Output Characteristics
ID
(A)
–4 V
Drain Current
I D (A)
Drain Current
–5 V
–2
–4
–4
–8
–12
Drain to Source Voltage
)
Ta = 25 °C
–3
–10
–30
–100 –300 –500
V DS (V)
–16
–20
V DS (V)
25 °C
Tc = –25 °C
75 °C
–3
–2
–1
VGS = –3.5 V
0
°C
Typical Transfer Characteristics
–6 V
–4 Pulse Test
–1
25
–5
–8 V
–3
=
this area is
limited by R DS(on)
Drain to Source Voltage
Tc (°C)
–5
–10 V
1
10 0 µs
0
µs
PW
1
m
DC
=
s
10
O
pe
m
s
ra
(1
tio
sh
n
(
ot
Tc
Operation in
)
0
V DS = –10 V
Pulse Test
–2
–4
–6
Gate to Source Voltage
–8
–10
V GS (V)
3
2SJ319(L), 2SJ319(S)
Pulse Test
–16
–12
–8
Static Drain to Source on State Resistance
R DS(on) ( Ω)
–2 A
–4
–1 A
0
4
I D = –5 A
–4
–8
12
Gate to Source Voltage
–16
–20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
5
4
3
–2 A
I D = –5 A
Static Drain to Source on State Resistance
vs. Drain Current
10
5
VGS = –10 V
Pulse Test
2
1
0.5
0.2
0.1
–0.2
–0.5
–1
–2
–5
Drain Current I D (A)
3
2
Tc = –25 °C
1
25 °C
0.5
2
1
0
–40
–1 A
VGS = –10 V
Pulse Test
0
40
80
120
160
Case Temperature Tc (°C)
–10
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
–20
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.2
75 °C
V DS = –10 V
Pulse Test
0.1
–0.05 –0.1 –0.2
–0.5
–1
–2
Drain Current I D (A)
–5
–10
2SJ319(L), 2SJ319(S)
Typical Capacitance vs.
Drain to Source Voltage
Body–Drain Diode Reverse
Recovery Time
1000
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
200
100
50
20
di/dt = 50 A/µs, VGS = 0
duty < 1 %, Ta = 25 °C
10
100
Coss
50
VGS = 0
f = 1 MHz
20
Crss
5
–0.05 –0.1 –0.2
–0.5
–1
Reverse Drain Current
–2
0
–5
I DR (A)
V DS
–200
–4
V DD = –150 V
–100 V
–50 V
–300
–400
–12
V GS
–500
0
–8
–16
–20
4
8
12
16
Gate Charge Qg (nc)
20
Switching Time t (ns)
–100
–30
-40
–50
500
V GS (V)
V DD = –50 V
–100 V
–150 V
–20
Switching Characteristics
0
Gate to Source Voltage
0
–10
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
V DS (V)
200
10
5
Drain to Source Voltage
Ciss
200
V GS = –10 V, V DD = –30 V
duty < 1 %, PW = 2 µs
100
t d(off)
50
tf
tr
20
t d(on)
10
5
–0.05 –0.1 –0.2
–0.5
–1
Drain Current
–2
–5 –10
I D (A)
5
2SJ319(L), 2SJ319(S)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
–5
Pulse Test
–4
–3
–2
–1
0
–10 V
–0.4
V GS = 0, 5 V
–0.8
–1.2
Source to Drain Voltage
–1.6
–2
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
0.3
0.1
0.03
D=1
0.5
0.2
0.1
0.05
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 6.25 °C/W, Tc = 25 °C
0.02
1
0.0
t
ho
lse
PDM
Pu
1s
D=
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
Pulse Width
6
100 m
PW (S)
1
10
2SJ319(L), 2SJ319(S)
Switching Time Test Circuit
Waveforms
Vout
Monitor
Vin Monitor
Vin
10%
D.U.T.
RL
90%
Vin
-10 V
50Ω
V DD
.= –30 V
.
90%
90%
Vout
td(on)
10%
10%
tr
td(off)
tf
7
2SJ319(L), 2SJ319(S)
Package Dimensions
As of January, 2001
1.7 ± 0.5
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
2.29 ± 0.5
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
3.1 ± 0.5
1.2 ± 0.3
2.29 ± 0.5
0.55 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
8
DPAK (L)-(1)
—
Conforms
0.42 g
2SJ319(L), 2SJ319(S)
As of January, 2001
2.3 ± 0.2
0.55 ± 0.1
(4.9)
(5.3)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.7 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (S)-(1),(2)
—
Conforms
0.28 g
9
2SJ319(L), 2SJ319(S)
As of January, 2001
(0.1)
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
(0.1)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
10
DPAK (S)-(3)
—
Conforms
0.28 g
2SJ319(L), 2SJ319(S)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
Japan
:
:
:
:
http://semiconductor.hitachi.com/
http://www.hitachi-eu.com/hel/ecg
http://sicapac.hitachi-asia.com
http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straβe 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
11