2SK2958(L),2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-568B (Z) 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 G 1 S 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2958(L),2SK2958(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 75 A 300 A 75 A 100 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note1 Note2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS — — 10 µA VDS = 30 V, VGS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V I D = 1mA, VDS = 10V Static drain to source on state resistance RDS(on) — 5.5 7.0 mΩ I D = 40A, VGS = 10V Note3 Static drain to source on state resistance RDS(on) — 9.0 14.0 mΩ I D = 40A, VGS = 4V Note3 Forward transfer admittance |yfs| 35 60 — S I D = 40A, VDS = 10V Note3 Input capacitance Ciss — 4100 — pF VDS = 10V Output capacitance Coss — 2700 — pF VGS = 0 Reverse transfer capacitance Crss — 800 — pF f = 1MHz Turn-on delay time t d(on) — 45 — ns VGS = 10V, ID = 40A Rise time tr — 430 — ns RL = 0.25Ω Turn-off delay time t d(off) — 460 — ns Fall time tf — 440 — ns Body–drain diode forward voltage VDF — 1.0 — V I F = 75A, VGS = 0 Body–drain diode reverse recovery time t rr — 90 — ns I F = 75A, VGS = 0 diF/ dt =50A/µs Note: 2 3. Pulse test 2SK2958(L),2SK2958(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 160 1000 10 I D (A) 120 Drain Current Channel Dissipation Pch (W) 300 80 40 100 PW 30 DC 10 3 1 10 µs 0 1 m µs s 0m s =1 (1 Op sh e ot) (T rati c = on 25 °C ) Operation in this area is limited by R DS(on) 0.3 0 50 100 150 0.1 Ta = 25°C 3 0.1 0.3 1 10 Drain to Source Voltage V 200 Case Temperature Tc (°C) 30 (V) DS 100 Typical Output Characteristics Typical Transfer Characteristics 6V 5V 4V Pulse Test 3.5 V 60 40 Drain Current Drain Current I D (A) 80 VGS = 10 V 100 I D (A) 100 3V 20 80 V DS = 10 V Pulse Test 60 25°C 40 75°C 20 Tc = –25°C 2.5 V 0 2 4 6 Drain to Source Voltage V 8 DS(V) 10 0 1 2 3 Gate to Source Voltage V 4 5 (V) GS 3 2SK2958(L),2SK2958(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.4 0.3 I D = 50 A 0.2 20 A 0.1 10 A Drain to Source On State Resistance R DS(on) (mW) Drain to Source Saturation Voltage V DS(on) (V) 0.5 Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test 20 VGS = 4 V 10 10 V 5 2 1 4 12 4 8 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 I D = 50 A 20 A 10 A 12 VGS = 4 V 8 50 A 10, 20 A 4 0 –40 10 V 0 40 80 120 160 Case Temperature Tc (°C) 1 3 10 30 100 300 Drain Current I D (A) 1000 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance R DS(on) (mW) 0 500 200 V DS = 10 V Pulse Test 100 50 Tc = –25 °C 20 25 °C 10 5 2 75 °C 1 0.5 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 2SK2958(L),2SK2958(S) Body–Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 500 30000 Capacitance C (pF) 100000 Reverse Recovery Time trr (ns) 1000 200 100 50 20 10 0.1 10000 Crss 300 di / dt = 50 A / µs V GS = 0, Ta = 25 °C 0 0 12 8 VDD = 25 V 10 V 5V 80 160 240 320 Gate Charge Qg (nc) 4 0 400 V GS (V) 5000 2000 Switching Time t (ns) 10 V DS 16 10 20 30 40 50 Drain to Source Voltage V DS (V) Gate to Source Voltage V DS (V) Drain to Source Voltage VDD = 5 V 10 V 25 V 30 20 20 V GS 40 VGS = 0 f = 1 MHz 100 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) I D = 75 A Coss 1000 Dynamic Input Characteristics 50 Ciss 3000 1000 500 200 Switching Characteristics V GS = 10 V, V DD = 10 V PW = 5 µs, duty < 1 % t d(off) tf tr 100 50 t d(on) 20 10 5 5 10 20 50 100 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 2SK2958(L),2SK2958(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) 100 10 V 80 5V 60 V GS = 0, –5 V 40 20 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance g s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.03 0.01 10 µ 6 0.2 q ch – c(t) = g s (t) • q ch – c q ch – c = 1.25 °C/W, Tc = 25 °C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 100 µ D= PW T PW T 1m 10 m 100 m Pulse Width PW (S) 1 10 2SK2958(L),2SK2958(S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50W V DD = 10 V Vout 10% 10% 90% td(on) tr 10% 90% td(off) tf 7 2SK2958(L),2SK2958(S) Package Dimensions As of January, 2001 Unit: mm 2.54 ± 0.5 (1.4) 2.54 ± 0.5 11.3 ± 0.5 10.0 1.27 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 11.0 ± 0.5 1.2 ± 0.2 4.44 ± 0.2 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 10.2 ± 0.3 2.59 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 8 LDPAK (L) — — 1.4 g 2SK2958(L),2SK2958(S) As of January, 2001 Unit: mm 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 3.0 +– 0.5 1.27 ± 0.2 1.2 ± 0.2 (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 ± 0.15 0.3 10.0 +– 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.1 +– 0.1 2.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(1) — — 1.3 g 9 2SK2958(L),2SK2958(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 ± 0.2 0.3 10.0 +– 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.1 +– 0.1 2.2 1.2 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 5.0 +– 0.5 1.27 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 10 LDPAK (S)-(2) — — 1.35 g 2SK2958(L),2SK2958(S) Cautions 1. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 11