2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET ADE-208-1257 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK1299(L), 2SK1299(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID 3 A 12 A 3 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 20 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2 2SK1299(L), 2SK1299(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 100 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — 100 µA VDS = 80 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V I D = 1 mA, VDS = 10 V Static Drain to source on state resistance RDS(on) — 0.25 0.35 Ω I D = 2 A, VGS = 10 V *1 — 0.30 0.45 Ω I D = 2 A, VGS = 4 V 1* Forward transfer admittance |yfs| 2.4 4.0 — S I D = 2 A, VDS = 10 V *1 Input capacitance Ciss — 400 — pF VDS = 10 V, VGS = 0, Output capacitance Coss — 165 — pF f = 1 MHz Reverse transfer capacitance Crss — 45 — pF Turn-on delay time t d(on) — 5 — ns I D = 2 A, VGS = 10 V, Rise time tr — 35 — ns RL = 15 Ω Turn-off delay time t d(off) — 160 — ns Fall time tf — 60 — ns Body to drain diode forward voltage VDF — 1.0 — V I F = 3 A, VGS = 0 Body to drain diode reverse recovery time t rr — 135 — ns I F = 3 A, VGS = 0, diF/dt = 50 A/µs Note: 1. Pulse test 3 2SK1299(L), 2SK1299(S) Maximum Safe Operation Area Power vs. Temperature Derating 50 10 10 PW 5 = 2 10 1 m s m s 1 0.5 0.2 0.1 µs µs 20 10 0 10 Drain Current ID (A) Operation in this area 20 is limited by RDS (on) n tio ra C) pe ° O 25 C = D TC ( Channel Dissipation Pch (W) 30 (1 Sh ot ) Ta = 25°C 0.05 0 50 100 Case Temperature TC (°C) 1 150 Typical Output Characteristics 10 10 V 5V Typical Transfer Characteristics 5 4.5 V VDS = 10 V Pulse Test 4V 4 2 4 3.5 V 3V VGS = 2.5 V Drain Current ID (A) Drain Current ID (A) 8 6 3 2 1 Pulse Test 0 4 2 5 10 20 50 100 200 500 1000 Drain to Source Voltage VDS (V) 2 4 6 8 10 Drain to Source Voltage VDS (V) 0 25°C 75°C TC = –25°C 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK1299(L), 2SK1299(S) Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (on) (V) 2.0 Pulse Test 1.6 ID = 5 A 1.2 0.8 2A 0.4 0 1A 6 2 4 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Pulse Test 2 1 0.5 VGS = 4 V 0.1 0.05 0.2 ID = 5 A 2A 1A 5A VGS = 4 V 1A 0.2 2A 10 V 0.1 Pulse Test 0 –40 0 40 120 80 Case Temperature TC (°C) 160 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 0.5 0.3 0.5 1 5 2 10 Drain Current ID (A) 20 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.4 10 V 0.2 10 VDS = 10 V 5 Pulse Test TC = –25°C 25°C 2 75°C 1 0.5 0.2 0.1 0.05 1.0 2 0.2 1 0.5 Drain Current ID (A) 5 5 2SK1299(L), 2SK1299(S) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 1000 Ciss 200 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 100 50 20 Crss 10 di/dt = 50 A/µs VGS = 0, Ta = 25°C Pulse Test 10 5 0.1 Coss 100 VGS = 0 f = 1 MHz 1 0.2 1 0.5 2 5 Reverse Drain Current IDR (A) 0 10 Switching Characteristics Dynamic Input Characteristics 40 16 12 VGS VDS 8 VDD = 25 V 50 V 80 V 8 ID = 3 A 16 24 32 Gate Charge Qg (nc) 4 0 40 Switching Time t (ns) 120 0 6 VDD = 80 V 50 V 25 V 160 80 500 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 200 10 20 30 40 50 Drain to Source Voltage VDS (V) td (off) 200 100 tf 50 tr 20 . 10 td (on) 5 0.1 0.2 VGS = 10 V, VDD =. 30 V PW = 2µs, duty < 0.1 % 0.5 1 2 Drain Current ID (A) 5 10 2SK1299(L), 2SK1299(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 Pulse Test 8 6 5V 4 VGS = 10 V 2 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) 0 Normalized Transient Thermal Impedance γs (t) VGS = 0, – 5 V Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch–c (t) = γs (t) · θch–c θch–c = 6.25°C/W, TC = 25°C PDM 0.02 1 se 0 0.03 0. hot Pul S 1 0.01 10 µ T 100 µ 1m 10 m Pulse Width PW (s) 100 m D =PW T PW 1 10 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 10 % 50 Ω Vin = 10 V . 30 V VDD = . td (on) 90 % tr 90 % td (off) tf 7 2SK1299(L), 2SK1299(S) Package Dimensions As of January, 2001 1.7 ± 0.5 Unit: mm 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 2.29 ± 0.5 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 3.1 ± 0.5 1.2 ± 0.3 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 8 DPAK (L)-(1) — Conforms 0.42 g 2SK1299(L), 2SK1299(S) As of January, 2001 2.3 ± 0.2 0.55 ± 0.1 (4.9) (5.3) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.7 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(1),(2) — Conforms 0.28 g 9 2SK1299(L), 2SK1299(S) As of January, 2001 (0.1) 2.3 ± 0.2 0.55 ± 0.1 (5.1) (5.1) (0.1) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(3) — Conforms 0.28 g 2SK1299(L), 2SK1299(S) Cautions 1. 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