ETC 2SK1880(L)|2SK1880(S)

2SK1880(L), 2SK1880(S)
Silicon N-Channel MOS FET
ADE-208-1331 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
No secondary breakdown
Suitable for Switching regulator
Outline
DPAK-1
4
4
1
1
2
3
2 3
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SK1880(L), 2SK1880(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
1.5
A
3.0
A
1.5
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
Channel dissipation
Pch*
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
2
2SK1880(L), 2SK1880(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
600
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
100
µA
VDS = 500 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
6.5
8.0
Ω
ID = 1 A
VGS = 10 V*1
Forward transfer admittance
|yfs|
0.85
1.4
—
S
ID = 1 A
VDS = 20 V*1
Input capacitance
Ciss
—
250
—
pF
VDS = 10 V
Output capacitance
Coss
—
55
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
8
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
10
—
ns
ID = 1 A
Rise time
tr
—
25
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
35
—
ns
RL = 30 Ω
Fall time
tf
—
30
—
ns
Body to drain diode forward
voltage
VDF
—
0.95
—
V
I F = 1.5 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
350
—
µs
I F = 1.5 A, VGS = 0,
diF / dt = 100 A / µs
Note
1. Pulse Test
3
2SK1880(L), 2SK1880(S)
Power vs. Temperature Derating
Maximum Safe Operation Area
10
100
150
1.6
Pulse Test
4.5 V
1.2
4V
0.8
0.4
0
VGS = 3.5 V
10
20
30
40
10 300 1000
2.0
Drain Current I D ( A )
Drain Current I D (A)
5V
25
°C
)
Typical Transfer Characteristics
Typical Output Characteristics
10 V
=
Drain to Source Voltage V DS (V)
Case Temperature Tc (°C)
2.0
(T
c
t)
50
s
o
sh
0.03
0
50
Drain to Source Voltage V DS (V)
4
O
pe
ra
tio
n
Ta = 25°C
0.01
0.1 0.3
1
3
m
s
s
(1
0.1
DC
µ
s
m
0.3
1
0µ
10
10
1
O
a pe
by rea rat
R is ion
DS lim in
(o ite th
n) d is
20
10
10
=
Drain Current I D (A)
3
PW
Channel Dissipation Pch (W)
30
1.6
Pulse Test
VDS = 20 V
1.2
0.8
75°C
Tc = 25°C
–25°C
0.4
0
2
4
6
8
10
Gate to Source Voltage V GS (V)
2SK1880(L), 2SK1880(S)
Static Drain to Source on State
Resistance vs. Drain Current
20
Pulse Test
16
I D = 1.5 A
12
8
1A
4
0.5 A
0
4
8
12
16
100
Static Drain to Source on State
Resistance R DS (on) ( Ω)
Drain to Source Saturation Voltage
V DS (on) (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
20
10
2
1
0.05 0.1 0.2
5
Forward Transfer Admittance
| yfs | (S)
Static Drain to Source on State
Resistance R DS (on) ( Ω)
20
8
0.5 A
4
–40
0
40
80
120
Case Temperature Tc (°C)
160
1
2
5
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
ID = 1 A
0.5
Drain Current I D (A)
Gate to Source Voltage VGS (V)
12
VGS = 10 V
5
20
16
Pulse Test
2
Pulse Test
V DS = 20 V
Tc = –25°C
1
0.5
75°C
0.2
25°C
0.1
0.05
0.02 0.05 0.1 0.2
0.5
1
2
Drain Current I D (A)
5
2SK1880(L), 2SK1880(S)
Typical Capacitance vs.
Drain to Source Voltage
5000
2000
1000
1000
di/dt = 100 A/µs
VGS = 0
Ta = 25°C
Pulse Test
VGS = 0
f = 1 MHz
Ciss
Capacitance C (pF)
Reverse Recovery Time t rr (ns)
Body to Drain Diode Reverse
Recovery Time
500
200
100
Coss
10
100
Crss
50
0.1 0.2
1
0.5
1
2
5
10
0
Reverse Drain Current I DR (A)
10
20
30
40
50
Drain to Source Voltage V DS (V)
Switching Characteristics
500
VGS
I D = 1.5 A
800
VDD = 100 V
250 V
400 V
600
400
VDS
VDD = 100 V
250 V
400 V
4
8
12
4
16
Gate Charge Qg (nc)
6
12
8
200
0
16
0
20
Switching Time t (ns)
20
1000
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VGS = 10 V
PW = 2 µ s
duty <
= 1%
VDD =
: 30 V
200
100
t d (off)
50
20
tr
tf
t d (on)
10
5
0.1 0.2
0.5
1
2
Drain Current I D (A)
5
10
2SK1880(L), 2SK1880(S)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
2.0
Pulse Test
1.6
1.2
0.8
VGS = 10 V
0.4
0 V, –5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (A)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
Tc = 25°C
1.0
0.5
0.3
0.2
0.1
0.05
0.1
0.02
0.03
0.01
10 µ
θ ch – c(t) = γ s(t) . θ ch – c
θ ch – c = 6.25°C / W. Tc = 25°C
PW
D= T
P DM
lse
t Pu
ho
1s
0.01
T
100 µ
1m
10 m
100 m
PW
1
10
Pulse Width PW (S)
7
2SK1880(L), 2SK1880(S)
Package Dimensions
As of January, 2001
1.7 ± 0.5
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
2.29 ± 0.5
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
3.1 ± 0.5
1.2 ± 0.3
2.29 ± 0.5
0.55 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
8
DPAK (L)-(1)
—
Conforms
0.42 g
2SK1880(L), 2SK1880(S)
As of January, 2001
2.3 ± 0.2
0.55 ± 0.1
(4.9)
(5.3)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.7 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (S)-(1),(2)
—
Conforms
0.28 g
9
2SK1880(L), 2SK1880(S)
As of January, 2001
(0.1)
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
(0.1)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
10
DPAK (S)-(3)
—
Conforms
0.28 g
2SK1880(L), 2SK1880(S)
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11