2SJ528(L), 2SJ528(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-641A (Z) 2nd. Edition Jul. 1998 Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching Outline DPAK–2 4 4 D 1 2 G 1 2 S 3 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ528(L),2SJ528(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS ±20 V Drain current ID –7 A –28 A –7 A –7 A 4.2 mJ 20 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalenche current Avalenche energy I AP Note1 Note3 EAR Note3 Note2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 2 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω 2SJ528(L),2SJ528(S) Electrical Characteristics (Ta = 25°C) Item Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS –60 — — V I D = –10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS — — –10 µA VDS = –60 V, VGS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16V, VDS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V I D = –1mA, VDS = –10V Static drain to source on state RDS(on) — 0.17 0.22 Ω I D = –4A, VGS = –10V Note4 resistance RDS(on) — 0.24 0.37 Ω I D = –4A, VGS = –4V Note4 Forward transfer admittance |yfs| 3.0 5.0 — S I D = –4A, VDS = –10V Input capacitance Ciss — 400 — pF VDS = –10V Output capacitance Coss — 220 — pF VGS = 0 Reverse transfer capacitance Crss — 75 — pF f = 1MHz Turn-on delay time t d(on) — 10 — ns VGS = –10V, ID = –4A Rise time tr — 40 — ns RL = 7.5Ω Turn-off delay time t d(off) — 75 — ns Fall time tf — 65 — ns Body–drain diode forward voltage VDF — –1.1 — V I F = –7A, VGS = 0 Body–drain diode reverse recovery time — 65 — ns I F = –7A, VGS = 0 diF/ dt = 50A/µs Note: Symbol t rr Note4 4. Pulse test 3 2SJ528(L),2SJ528(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 40 –100 10 µs Drain Current I D (A) Channel Dissipation Pch (W) –30 30 20 10 –3 –1 –0.3 1 =1 0µ s this area is limited by R DS(on) ) –0.1 –0.03 0 50 100 Case Temperature 150 Tc (°C) 200 –4 V –10 V –6 V –5 V –8 –3.5 V –3 V VGS = –2.5 V –2 0 Typical Transfer Characteristics V DS = –10 V Pulse Test Pulse Test –6 –4 –30 –100 (V) DS –10 –2 –4 –6 –8 –10 Drain to Source Voltage V DS(V) Drain Current I D (A) –10 Ta = 25 °C –0.1 –0.3 –1 –3 –10 Drain to Source Voltage V Typical Output Characteristics Drain Current I D (A) 10 0 m ms Op s( era 1s tio ho n( t) Tc = 25 Operation in DC –0.01 4 PW –10 –8 –6 –4 Tc = 75 °C –2 0 25 °C –25 °C –1 –2 –3 –4 Gate to Source Voltage V GS (V) –5 2SJ528(L),2SJ528(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.6 –1.2 –0.8 –5 A –2 A –0.4 –1 A Static Drain to Source on State Resistance R DS(on) ( W) 0 –4 –8 –12 Gate to Source Voltage –1 A V GS = –4 V 0.1 0 –40 –5 A -1,–2 A 0.2 0.5 –10 V 0 40 80 120 160 Case Temperature Tc (°C) VGS = –4 V 0.2 0.1 –10 V 0.05 0.02 Pulse Test 0.01 –16 –20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test –2 A 0.4 I D = –5 A 0.3 Drain to Source On State Resistance R DS(on) ( W) Pulse Test –0.1 –0.3 –1 –3 –10 Drain Current Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) –2.0 Static Drain to Source on State Resistance vs. Drain Current 1 100 –30 –100 I D (A) Forward Transfer Admittance vs. Drain Current 30 10 Ta = –25 °C 3 25 °C 1 0.3 0.1 –0.1 –0.3 75 °C V DS = –10 V Pulse Test –1 –3 –10 –30 Drain Current I D (A) –100 5 2SJ528(L),2SJ528(S) Body–Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 5000 VGS = 0 f = 1 MHz 200 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 100 50 20 Ciss 300 Coss 100 Crss 30 10 5 –0.1 1000 di / dt = 50 A / µs VGS = 0, Ta = 25 °C 10 –1 –10 –20 –0.3 –3 Reverse Drain Current I DR (A) 0 –60 –80 –8 V DS V GS V DD = –10 V –25 V –50 V 32 8 16 24 Gate Charge Qg (nc) –40 –50 –12 –16 –20 40 1000 Switching Time t (ns) –40 –4 V GS (V) I D = –7 A –30 Switching Characteristics 0 Gate to Source Voltage V DS (V) Drain to Source Voltage –20 –100 0 6 V DD = –10 V –25 V –50 V –20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 0 –10 V GS = –10 V, V DD = –30 V Pw = 5 µs, duty < 1 % 300 t d(off) 100 30 tf tr t d(on) 10 3 1 –0.1 –0.3 –1 –3 –10 –20 Drain Current I D (A) 2SJ528(L),2SJ528(S) Repetitive Avalanche Energy EAR (mJ) –10 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) Pulse Test –8 –6 –10 V –4 V GS = 0, 5 V –5 V –2 0 –0.4 –0.8 –1.2 Source to Drain Voltage –1.6 –2.0 Maximum Avalanche Energy vs. Channel Temperature Derating 10 I AP = –7 A V DD = –25 V duty < 0.1 % Rg > 50 W 8 6 4 2 0 25 V SD (V) 50 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit V DS Monitor 75 Avalanche Waveform EAR = L 1 2 • L • I AP • 2 I AP Monitor VDSS VDSS – V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin –15 V 50W 0 VDD 7 2SJ528(L),2SJ528(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance g s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.2 0.1 0.05 q ch – c(t) = g s (t) • q ch – c q ch – c = 6.25 °C/W, Tc = 25 °C 0.02 e uls 1 0.03 0.0 PDM P ot D= h 1s PW T PW T 0.01 10 µ 100 µ 1m 10 m 100 m Pulse Width 10 PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 1 Vin 10% D.U.T. RL 90% Vin –10 V 50W V DD = –30 V Vout td(on) 8 90% 90% 10% 10% tr td(off) tf 2SJ528(L),2SJ528(S) Package Dimensions As of January, 2001 1.7 ± 0.5 Unit: mm 2.3 ± 0.2 0.55 ± 0.1 4.7 ± 0.5 1.2 ± 0.3 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 3.1 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (L)-(2) — — 0.42 g 9 2SJ528(L),2SJ528(S) As of January, 2001 2.3 ± 0.2 0.55 ± 0.1 (4.9) (5.3) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.7 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(1),(2) — Conforms 0.28 g 2SJ528(L),2SJ528(S) As of January, 2001 (0.1) 2.3 ± 0.2 0.55 ± 0.1 (5.1) (5.1) (0.1) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(3) — Conforms 0.28 g 11 2SJ528(L),2SJ528(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12