ETC 2SJ528(L)|2SJ528(S)

2SJ528(L), 2SJ528(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-641A (Z)
2nd. Edition
Jul. 1998
Features
• Low on-resistance RDS(on) = 0.17 Ω typ.
• 4 V gete drive devices
• High speed switching
Outline
DPAK–2
4
4
D
1 2
G
1 2
S
3
3
1. Gate
2. Drain
3. Source
4. Drain
2SJ528(L),2SJ528(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–7
A
–28
A
–7
A
–7
A
4.2
mJ
20
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Avalenche current
Avalenche energy
I AP
Note1
Note3
EAR
Note3
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
2
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SJ528(L),2SJ528(S)
Electrical Characteristics (Ta = 25°C)
Item
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
–60
—
—
V
I D = –10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
±20
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain current
I DSS
—
—
–10
µA
VDS = –60 V, VGS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16V, VDS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.0
V
I D = –1mA, VDS = –10V
Static drain to source on state
RDS(on)
—
0.17
0.22
Ω
I D = –4A, VGS = –10V Note4
resistance
RDS(on)
—
0.24
0.37
Ω
I D = –4A, VGS = –4V Note4
Forward transfer admittance
|yfs|
3.0
5.0
—
S
I D = –4A, VDS = –10V
Input capacitance
Ciss
—
400
—
pF
VDS = –10V
Output capacitance
Coss
—
220
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
75
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
10
—
ns
VGS = –10V, ID = –4A
Rise time
tr
—
40
—
ns
RL = 7.5Ω
Turn-off delay time
t d(off)
—
75
—
ns
Fall time
tf
—
65
—
ns
Body–drain diode forward voltage VDF
—
–1.1
—
V
I F = –7A, VGS = 0
Body–drain diode reverse
recovery time
—
65
—
ns
I F = –7A, VGS = 0
diF/ dt = 50A/µs
Note:
Symbol
t rr
Note4
4. Pulse test
3
2SJ528(L),2SJ528(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
40
–100
10 µs
Drain Current I D (A)
Channel Dissipation Pch (W)
–30
30
20
10
–3
–1
–0.3
1
=1
0µ
s
this area is
limited by R DS(on)
)
–0.1
–0.03
0
50
100
Case Temperature
150
Tc (°C)
200
–4 V
–10 V
–6 V
–5 V
–8
–3.5 V
–3 V
VGS = –2.5 V
–2
0
Typical Transfer Characteristics
V DS = –10 V
Pulse Test
Pulse Test
–6
–4
–30 –100
(V)
DS
–10
–2
–4
–6
–8
–10
Drain to Source Voltage V DS(V)
Drain Current I D (A)
–10
Ta = 25 °C
–0.1 –0.3
–1
–3
–10
Drain to Source Voltage V
Typical Output Characteristics
Drain Current I D (A)
10
0 m ms
Op
s(
era
1s
tio
ho
n(
t)
Tc
=
25
Operation in
DC
–0.01
4
PW
–10
–8
–6
–4
Tc = 75 °C
–2
0
25 °C
–25 °C
–1
–2
–3
–4
Gate to Source Voltage V GS
(V)
–5
2SJ528(L),2SJ528(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.6
–1.2
–0.8
–5 A
–2 A
–0.4
–1 A
Static Drain to Source on State Resistance
R DS(on) ( W)
0
–4
–8
–12
Gate to Source Voltage
–1 A
V GS = –4 V
0.1
0
–40
–5 A
-1,–2 A
0.2
0.5
–10 V
0
40
80
120
160
Case Temperature Tc (°C)
VGS = –4 V
0.2
0.1
–10 V
0.05
0.02
Pulse Test
0.01
–16
–20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
–2 A
0.4
I D = –5 A
0.3
Drain to Source On State Resistance
R DS(on) ( W)
Pulse Test
–0.1
–0.3
–1
–3
–10
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
–2.0
Static Drain to Source on State Resistance
vs. Drain Current
1
100
–30
–100
I D (A)
Forward Transfer Admittance vs.
Drain Current
30
10
Ta = –25 °C
3
25 °C
1
0.3
0.1
–0.1 –0.3
75 °C
V DS = –10 V
Pulse Test
–1
–3 –10 –30
Drain Current I D (A)
–100
5
2SJ528(L),2SJ528(S)
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
5000
VGS = 0
f = 1 MHz
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
100
50
20
Ciss
300
Coss
100
Crss
30
10
5
–0.1
1000
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
10
–1
–10 –20
–0.3
–3
Reverse Drain Current I DR (A)
0
–60
–80
–8
V DS
V GS
V DD = –10 V
–25 V
–50 V
32
8
16
24
Gate Charge Qg (nc)
–40
–50
–12
–16
–20
40
1000
Switching Time t (ns)
–40
–4
V GS (V)
I D = –7 A
–30
Switching Characteristics
0
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
–20
–100
0
6
V DD = –10 V
–25 V
–50 V
–20
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
–10
V GS = –10 V, V DD = –30 V
Pw = 5 µs, duty < 1 %
300
t d(off)
100
30
tf
tr
t d(on)
10
3
1
–0.1
–0.3
–1
–3
–10 –20
Drain Current I D (A)
2SJ528(L),2SJ528(S)
Repetitive Avalanche Energy EAR (mJ)
–10
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
Pulse Test
–8
–6
–10 V
–4
V GS = 0, 5 V
–5 V
–2
0
–0.4
–0.8
–1.2
Source to Drain Voltage
–1.6
–2.0
Maximum Avalanche Energy vs.
Channel Temperature Derating
10
I AP = –7 A
V DD = –25 V
duty < 0.1 %
Rg > 50 W
8
6
4
2
0
25
V SD (V)
50
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit
V DS
Monitor
75
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
–15 V
50W
0
VDD
7
2SJ528(L),2SJ528(S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
g s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.2
0.1
0.05
q ch – c(t) = g s (t) • q ch – c
q ch – c = 6.25 °C/W, Tc = 25 °C
0.02
e
uls
1
0.03
0.0
PDM
P
ot
D=
h
1s
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
Pulse Width
10
PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
1
Vin
10%
D.U.T.
RL
90%
Vin
–10 V 50W
V DD
= –30 V
Vout
td(on)
8
90%
90%
10%
10%
tr
td(off)
tf
2SJ528(L),2SJ528(S)
Package Dimensions
As of January, 2001
1.7 ± 0.5
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
4.7 ± 0.5
1.2 ± 0.3
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
3.1 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (L)-(2)
—
—
0.42 g
9
2SJ528(L),2SJ528(S)
As of January, 2001
2.3 ± 0.2
0.55 ± 0.1
(4.9)
(5.3)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.7 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
10
DPAK (S)-(1),(2)
—
Conforms
0.28 g
2SJ528(L),2SJ528(S)
As of January, 2001
(0.1)
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
(0.1)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (S)-(3)
—
Conforms
0.28 g
11
2SJ528(L),2SJ528(S)
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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Colophon 2.0
12