2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 4 4 D 1 2 3 G S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 5 A 20 A 5 A 5 A 2.14 mJ 20 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalanche current Avalanche energy I AP Note1 Note3 EAR Note3 Note2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 2 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω 2SK2796(L), 2SK2796(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 — — V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V I D = 1mA, VDS = 10V Static drain to source on state resistance RDS(on) — 0.12 0.16 Ω I D = 3 A, VGS = 10V Note4 Static drain to source on state resistance RDS(on) — 0.16 0.25 Ω I D = 3A, VGS = 4V Note4 Forward transfer admittance |yfs| 2.5 4.0 — S I D = 3A, VDS = 10V Note4 Input capacitance Ciss — 180 — pF VDS = 10V Output capacitance Coss — 90 — pF VGS = 0 Reverse transfer capacitance Crss — 30 — pF f = 1MHz Turn-on delay time t d(on) — 9 — ns VGS = 10V, ID = 3A Rise time tr — 25 — ns RL = 10Ω Turn-off delay time t d(off) — 35 — ns Fall time tf — 55 — ns Body–drain diode forward voltage VDF — 1.0 — V I F = 5A, VGS = 0 Body–drain diode reverse recovery time t rr — 40 — ns I F = 5A, VGS = 0 diF/ dt =50A/µs Note: 4. Pulse test 3 2SK2796(L), 2SK2796(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 100 m s( 1s °C I D (A) Ta = 25°C 0.1 50 100 0.2 0.5 1 2 5 10 20 Drain to Source Voltage V DS(V) 200 Typical Transfer Characteristics 5 25°C Pulse Test –25°C I D (A) 4 Typical Output Characteristics 10 V 6 V 5V 4V 3.5 V 3V Drain Current 3 2 2.5 V 1 4 2 4 6 Drain to Source Voltage V 8 DS(V) Tc = 75°C 3 2 1 V DS = 10 V Pulse Test VGS = 2 V 0 ) 150 t) 25 100 ho = 5 I D (A) 10 c (T 50 Ambient Temperature Ta (°C) 4 Operation in this area is limited by R DS(on) 0 µ m s s n 1 = 0.3 0 Drain Current 3 µs 10 1 tio ra pe 10 PW O 20 10 C Drain Current 30 10 30 D Channel Dissipation Pch (W) 40 10 0 2 4 6 Gate to Source Voltage V 8 (V) GS 10 2SK2796(L), 2SK2796(S) 1.6 1.2 0.8 ID=5A 0.4 0 Static Drain to Source on State Resistance R DS(on) ( W) Pulse Test 2A 1A 6 2 4 Gate to Source Voltage 8 10 0.4 1A 2A ID=5A V GS = 4 V 0.2 5A 0.1 1, 2 A 10 V 0 –40 2 1 0.5 0.2 VGS = 4 V 0.1 10 V 0.3 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.3 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 0.05 0.1 0 40 80 120 160 Case Temperature Tc (°C) 3 1 Drain Current 30 10 I D (A) 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) 2.0 Drain to Source On State Resistance R DS(on) ( W) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Tc = –25 °C 5 25 °C 2 75 °C 1 0.5 0.2 0.1 0.1 V DS = 10 V Pulse Test 0.2 0.5 1 2 5 Drain Current I D (A) 10 5 2SK2796(L), 2SK2796(S) Body–Drain Diode Reverse Recovery Time 1000 500 VGS = 0 f = 1 MHz 500 200 Capacitance C (pF) Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage 100 50 20 10 5 0.1 200 Ciss 100 50 Coss 20 di / dt = 50 A / µs V GS = 0, Ta = 25 °C Crss 10 0 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) 20 12 V DS V GS V DD = 50 V 25 V 10 V 2 4 6 8 Gate Charge Qg (nc) 40 50 8 4 0 10 V GS (V) 100 t d(off) 50 Switching Time t (ns) 40 16 Gate to Source Voltage V DS (V) Drain to Source Voltage 60 0 6 V DD = 10 V 25 V 50 V 80 30 Switching Characteristics 20 ID=5A 20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 100 10 tf 20 tr t d(on) 10 5 V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 2 1 0.1 0.2 0.5 1 Drain Current 2 5 I D (A) 10 2SK2796(L), 2SK2796(S) Repetitive Avalanche Energy E AR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) 10 8 6 5V 10 V V GS = 0, –5 V 4 2 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 Maximun Avalanche Energy vs. Channel Temperature Derating 2.5 I AP = 5 A V DD = 25 V duty < 0.1 % Rg > 50 W 2.0 1.5 1.0 0.5 2.0 0 25 50 V SD (V) 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit V DS Monitor 75 Avalanche Waveform EAR = L 1 2 • L • I AP • 2 I AP Monitor VDSS VDSS – V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50W 0 VDD 7 2SK2796(L), 2SK2796(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance g s (t) 3 Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 0.05 0.1 q ch – c(t) = g s (t) • q ch – c q ch – c = 6.25 °C/W, Tc = 25 °C 0.02 e uls 1 0.0 0.03 PDM P ot D= h 1s PW T PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50W V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK2796(L), 2SK2796(S) Package Dimensions As of January, 2001 1.7 ± 0.5 Unit: mm 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 2.29 ± 0.5 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 3.1 ± 0.5 1.2 ± 0.3 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (L)-(1) — Conforms 0.42 g 9 2SK2796(L), 2SK2796(S) As of January, 2001 2.3 ± 0.2 0.55 ± 0.1 (4.9) (5.3) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.7 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(1),(2) — Conforms 0.28 g 2SK2796(L), 2SK2796(S) As of January, 2001 (0.1) 2.3 ± 0.2 0.55 ± 0.1 (5.1) (5.1) (0.1) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(3) — Conforms 0.28 g 11 2SK2796(L), 2SK2796(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12